Method for preparing transparent Bi2Se3 film

A thin-film and transparent technology, which is applied in the field of preparing transparent Bi2Se3 thin films, can solve the problems of low deposition rate, high energy consumption, and flammable residual gas, and achieve high magnetron sputtering efficiency, low preparation cost, and good repeatability Effect

Active Publication Date: 2018-01-23
SOUTHWEST JIAOTONG UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, MBE technology requires high-precision vacuum pumps, expensive equipment, large energy consumption, and high cost
However, the deposition rate of CVD technology is low, and the residual gas p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing transparent Bi2Se3 film
  • Method for preparing transparent Bi2Se3 film
  • Method for preparing transparent Bi2Se3 film

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Embodiment one

[0025] A preparation of transparent Bi 2 Se 3 A thin film method comprising the steps of:

[0026] a. Sputtering deposition: select quartz (SiO 2 ) substrate or sapphire (Al 2 o 3 ) substrate as the substrate for magnetron sputtering, select Bi with a purity of 99.999% 2 Se 3 The material is used as the target material of magnetron sputtering, and a layer of Bi is deposited on the substrate by sputtering 2 Se 3 film;

[0027] The process conditions of sputtering deposition are: the distance from the target to the substrate is 7cm, and the air pressure in the vacuum chamber is less than 2×10 -4 Pa, and then feed argon with a purity of 99.995% as the working gas; the gas pressure during sputtering is 0.5 Pa, the substrate temperature is 330° C., the sputtering power is 70 W, and the sputtering time is 3 seconds.

[0028] b. Post-annealing treatment: deposit Bi with step a 2 Se 3 The substrate of the film and selenium balls with a particle size...

Example Embodiment

[0034] Embodiment two

[0035] A preparation of transparent Bi 2 Se 3 A thin film method comprising the steps of:

[0036] a. Sputtering deposition: select sapphire (Al 2 o 3 ) substrate as the substrate for magnetron sputtering, select Bi with a purity of 99.999% 2 Se 3 The material is used as the target material of magnetron sputtering, and a layer of Bi is deposited on the substrate by sputtering 2 Se 3 film;

[0037] The process conditions of sputtering deposition are: the distance from the target to the substrate is 5cm, and the air pressure in the vacuum chamber is less than 2×10 -4 Pa, and then feed argon with a purity of 99.995% as the working gas; the gas pressure during sputtering is 0.45Pa, the substrate temperature is 350°C, the sputtering power is 60W, and the sputtering time is 5 seconds.

[0038] b. Post-annealing treatment: deposit Bi with step a 2 Se 3 The substrate of the film and the selenium balls with a particle size of 0.9 mm are sealed together ...

Example Embodiment

[0044] Embodiment three

[0045] A preparation of transparent Bi 2 Se 3 A thin film method comprising the steps of:

[0046] a. Sputtering deposition: select quartz (SiO 2 ) substrate as the substrate for magnetron sputtering, select Bi with a purity of 99.999% 2 Se 3 The material is used as the target material of magnetron sputtering, and a layer of Bi is deposited on the substrate by sputtering 2 Se 3 film;

[0047] The process conditions of sputtering deposition are: the distance from the target to the substrate is 6cm, and the air pressure in the vacuum chamber is less than 2×10 -4 Pa, and then feed argon with a purity of 99.995% as the working gas; the gas pressure during sputtering is 0.35Pa, the substrate temperature is 380°C, the sputtering power is 55W, and the sputtering time is 10 seconds.

[0048] b. Post-annealing treatment: deposit Bi with step a 2 Se 3 The substrate of the film and selenium balls with a particle size of 1.0 mm are sealed together with ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a transparent Bi2Se3 film. The method comprises the following steps that a, sputtering deposition is conducted, specifically, a quartz (SiO2) substrate or a sapphire (Al2O3) substrate is selected as a magnetron sputtering substrate, a Bi2Se3 material with the purity being 99.999% is selected as a magnetron sputtering target material, and a Bi2Se3 filmbody is formed on the substrate through sputtering deposition; and b, post-annealing treatment is conducted, specifically, the substrate where the Bi2Se3 film body is deposited in the step a and selenium pellets with the particle size being 0.6-1.2 mm are sealed into a vacuum quartz tube with the air pressure being lower than 1*10<-2> Pa, then the vacuum quartz tube is arranged in a tubular furnace, post-annealing treatment is conducted at the argon protective atmosphere, and the transparent Bi2Se3 film is obtained. Through the method, the large-area Bi2Se3 film with the good light transmittance performance can be prepared, the preparation process is simple, the energy consumption is low, the cost is low, the efficiency is high, the repeatability is good, and the method is suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing transparent Bi 2 Se 3 Thin film method, especially related to the preparation of transparent Bi by magnetron sputtering 2 Se 3 thin film method. Background technique [0002] Bi 2 Se 3 The transparent film belongs to the VA-VIA group of direct band gap inorganic semiconductors. It has narrow band gap, stable performance, good photoelectric conversion performance, and it has remarkable third-order nonlinear optical characteristics, short response time and large nonlinear The optical coefficient can be used as a nonlinear optical device. Transparent Bi 2 Se 3 Thin films have broad application prospects in high-performance optoelectronic devices (all-optical switches, photodetectors, terahertz lasers, waveguides, transparent electrodes) and light processing. Various methods have been used to prepare transparent Bi 2 Se 3 Thin films such as molecular beam epitaxy (MBE) and chemical vapor deposition...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/06C23C14/35C23C14/58C30B23/00C30B29/46C30B33/02
Inventor 羊新胜刘悦赵可雷鸣赵勇
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap