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Bismuth-based semiconductor photocatalyst and preparation method thereof

A photocatalyst and semiconductor technology, applied in the field of bismuth series semiconductor photocatalyst and its preparation, can solve the problems such as limiting the utilization rate of light, and achieve the effects of large market promotion value, narrow band gap, and efficient utilization

Active Publication Date: 2018-01-26
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the band gap and the absorption and utilization of light energy have a great relationship, TiO 2 It is a wide bandgap material, which limits the utilization of light

Method used

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  • Bismuth-based semiconductor photocatalyst and preparation method thereof
  • Bismuth-based semiconductor photocatalyst and preparation method thereof
  • Bismuth-based semiconductor photocatalyst and preparation method thereof

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preparation example Construction

[0026] A preparation method of a bismuth-based semiconductor photocatalyst, comprising:

[0027] Mixing the first bismuth nitrate solution with a volume to weight ratio of 3:53 to 72 mL / g and a concentration of 3 to 5 moL / L with ammonium metavanadate to obtain a first mixed solution;

[0028] Mixing the second bismuth nitrate solution with a volume-to-weight ratio of 1:43-67mL / g and a concentration of 3-5moL / L with a surfactant to obtain a second mixed solution;

[0029] mixing the first mixed solution with the second mixed solution to obtain a third mixed solution, and then adjusting the pH to 9-11;

[0030] The third mixed solution after adjusting the pH is doped with silver according to the volume-to-weight ratio of 1:0.01-0.03mL / g by impregnation method to obtain the fourth mixed solution, and the fourth mixed solution is stirred and pumped in sequence. Obtain the first component after filtering, washing for the first time, washing for the second time, drying for the firs...

Embodiment 1

[0052] This embodiment provides a bismuth-based semiconductor photocatalyst, which is prepared by the following method:

[0053] With a weight ratio of 1:2 Bi(NO 3 ) 3 ·5H 2 O and NH 4 VO 3 After mixing, add the nitric acid solution of 0.2moL / L to make the first bismuth nitrate solution and the second bismuth nitrate solution, and the nitric acid solution and Bi(NO 3 ) 3 ·5H 2 The volume-to-weight ratio of O is 1:0.5 mL / g.

[0054] Mixing the first bismuth nitrate solution and ammonium metavanadate with a concentration of 3moL / L of 3:53mL / g to obtain the first mixed solution;

[0055] After mixing the second bismuth nitrate solution of 3moL / L with a surfactant in a volume-to-weight ratio of 1:43mL / g, the second mixed solution is obtained;

[0056] Drop the first mixed solution into the second mixed solution at a rate of 3g / S and mix to obtain the third mixed solution, then adjust the pH to 9;

[0057] The third mixed solution after adjusting the pH is mixed with silve...

Embodiment 2

[0062] This embodiment provides a bismuth-based semiconductor photocatalyst, which differs from the bismuth-based semiconductor photocatalyst provided in Example 1 in that the bismuth-based semiconductor photocatalyst is prepared by the following method:

[0063] With a weight ratio of 1:3 Bi(NO 3 ) 3 ·5H 2 O and NH 4 VO 3 After mixing, add the nitric acid solution of 0.3moL / L to make the first bismuth nitrate solution and the second bismuth nitrate solution, and the nitric acid solution and Bi(NO 3 ) 3 ·5H 2 The volume-to-weight ratio of O is 1:0.6 mL / g.

[0064] Mixing the first bismuth nitrate solution and ammonium metavanadate with a concentration of 4moL / L of 3:61mL / g to obtain the first mixed solution;

[0065] After mixing the second bismuth nitrate solution of 4moL / L with a surfactant in a volume-to-weight ratio of 1:53mL / g, the second mixed solution is obtained;

[0066] Drop the first mixed solution into the second mixed solution at a rate of 4g / S and mix to ...

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Abstract

The invention provides a bismuth-based semiconductor photocatalyst and a preparation method thereof, and relates to the technical field of photocatalysts. The preparation method comprises the following steps: mixing a first bismuth nitrate solution and metavanadic acid to obtain a first mixed solution; mixing a second bismuth nitrate solution and surfactant to obtain a second mixed solution; mixing the first mixed solution and the second mixed solution to obtain a third mixed solution, and regulating the pH value; doping the third mixed solution with silver to obtain a fourth mixed solution, sequentially performing stirring, suction filtering, secondary washing, drying and calcining to obtain a first component; mixing bismuth trioxide and tungsten trioxide to obtain a first mixture, mixingthe first mixture with an alcohol solution to obtain a fifth mixed solution; doping the fifth mixed solution with copper, and sequentially drying and calcining to obtain a second component; and mixing the first component and the second component. The photocatalyst has a narrow band gap, good photocatalytic performance and efficient visible light resource utilization, and has a great popularization value.

Description

technical field [0001] The invention relates to the technical field of photocatalysts, and in particular to a bismuth-based semiconductor photocatalyst and a preparation method thereof. Background technique [0002] With the aggravation of environmental pollution and energy shortage, human beings have fallen into an energy crisis. Finding effective and efficient new energy to replace non-renewable energy has become one of the effective methods for human beings to solve energy development. New energy materials are an important foundation to guide and support the development of new energy, and an important way to reduce carbon emissions, optimize energy structure, and achieve sustainable development. Among them, photocatalysis has become an ideal environmental pollution control technology and clean energy production technology due to its unique properties such as deep reaction at room temperature and direct use of solar energy as a light source to drive the reaction. In 1972...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/22
Inventor 刘超徐启翔王晨朱义松徐桂龙张春
Owner YANCHENG INST OF TECH
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