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Graphene-niobium selenide superconducting heterojunction device and preparation method thereof

A graphene, niobium selenide technology, applied in superconducting devices, semiconductor devices, electrical components, etc., can solve the problems of weak van der Waals force binding, difficult product size, easy introduction of impurities, etc., to achieve product size control, product size Easy, simple craftsmanship

Active Publication Date: 2018-01-26
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of graphene-NbSe superconducting heterojunction device and preparation method thereof, for solving the problem of vertically stacked graphene / selenide in the prior art Niobium / graphene heterojunction layers are combined by weak van der Waals force, which is easy to introduce impurities, complicated process, difficult to control the size of the obtained product, low yield and high cost

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  • Graphene-niobium selenide superconducting heterojunction device and preparation method thereof
  • Graphene-niobium selenide superconducting heterojunction device and preparation method thereof
  • Graphene-niobium selenide superconducting heterojunction device and preparation method thereof

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Embodiment 1

[0048] Such as figure 1 As shown, it shows a schematic diagram of the preparation process of the graphene-niobium selenide superconducting heterojunction device of the present invention. The preparation method of the graphene-niobium selenide superconducting heterojunction device of the present embodiment includes the following steps:

[0049] Step S1, providing a substrate 1, such as figure 2 shown. As an example, the substrate 1 may be one of silicon, silicon oxide, glass, ceramic and polymer or a composite material of two or more. In this embodiment, a silicon material with silicon oxide attached to its surface is used as the substrate 1, wherein the silicon oxide is an insulating layer.

[0050] Step S2, forming graphene 2 on the upper surface of the substrate 1, such as image 3 shown.

[0051] Specifically, the specific method of step S2 may include: directly forming the graphene 2 on the substrate 1 by mechanical exfoliation, or transferring the graphene 2 to the s...

Embodiment 2

[0075] In the first embodiment, the number of the trench 3 is 1, and the graphene 2 is divided into two independent regions. However, in this embodiment, the number of the grooves 3 is two, and the graphene 2 is divided into three independent regions. Such as Figure 7 As shown, it is a schematic structural diagram of a graphene-niobium selenide superconducting heterojunction device. The preparation method of the graphene-niobium selenide superconducting heterojunction device in this embodiment includes the following steps:

[0076] In step S1 , a substrate 1 is provided. As an example, the substrate 1 may be one of silicon, silicon oxide, glass, ceramic and polymer or a composite material of two or more. In this embodiment, a silicon material with silicon oxide attached to its surface is used as the substrate 1, wherein the silicon oxide is an insulating layer.

[0077] Step S2, forming graphene 2 on the upper surface of the substrate 1, such as image 3 shown.

[0078] S...

Embodiment 3

[0102] The present invention also provides a graphene-niobium selenide planar heterojunction device, please refer to Figure 7 , the graphene-niobium selenide superconducting heterojunction device includes a substrate 1 , graphene 2 , trench 3 , and niobium selenide 4 .

[0103] Specifically, the graphene 2 is located above the substrate 1 .

[0104] Specifically, the groove 3 is located in the graphene 2, and the graphene 2 is patterned to form the graphene 2 with a predetermined shape. In this embodiment, the number of the grooves 3 is two.

[0105] Specifically, the niobium selenide 4 is located in the trench 3, and the niobium selenide is connected to the edge of the graphene 2 to form a graphene-niobium selenide planar superconducting heterojunction.

[0106] Specifically, the groove 3 is straight, curved, or a combination of one or both of the straight and curved. In this embodiment, the groove 3 is rectangular.

[0107] The graphene-niobium selenide planar supercond...

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Abstract

The invention provides a graphene-niobium selenide superconducting heterojunction device and a preparation method thereof. The method includes: providing a substrate; forming graphene on the substrate; performing patterning on the graphene to form grooves with preset shapes; and growing niobium selenide in the grooves to form a graphene-niobium selenide planar superconducting heterojunction, wherein the niobium selenide is grown along the boundary epitaxy of the graphene. According to the graphene-niobium selenide superconducting heterojunction device and the preparation method thereof, the graphene-niobium selenide planar heterojunction is grown in an epitaxial manner through a chemical vapor deposition method, the introduction of impurities is avoided, the process is simple, the dimension of an obtained product is easy to control, the yield is high, the cost is low, and the requirements of industrial and batch production can be satisfied.

Description

technical field [0001] The invention relates to a heterojunction semiconductor device, in particular to a graphene-niobium selenide superconducting heterojunction device. Background technique [0002] A heterojunction is an interface region formed by the contact of two different semiconductors. According to the different conductivity types of the two materials, the heterojunction can be divided into a homogeneous heterojunction (P-p junction or N-n junction) and a heterogeneous heterojunction (P-n or p-N). Usually, the conditions for forming a heterojunction are: two semiconductors have similar crystal structure, similar atomic spacing and thermal expansion coefficient. Using interfacial alloys, epitaxial growth, vacuum deposition and other techniques, heterojunctions can be fabricated. The heterojunction often has excellent photoelectric characteristics that cannot be achieved by the PN junctions of the two semiconductors, making it suitable for making ultra-high-speed sw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01L29/16H01L39/00H10N60/00
CPCH01L21/02568H01L21/02639H10N60/10H10N60/01
Inventor 王浩敏谢红王慧山王秀君陈令修贺立谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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