Two-dimensional black phosphorus pn junction, its preparation method and application

Abstract

The invention discloses a two-dimensional black phosphorus PN junction, which may include a two-dimensional black phosphorus film, at least a partial area of ​​the surface of the black phosphorus film is covered with a film with charge transfer characteristics; and at least on the black phosphorus film At the joint interface with the film with charge transfer properties, the black phosphorus film is doped by the constituent substances of the film with charge transfer doping properties to form an n-type semiconductor; at the same time, the black phosphorus film also contains p-type semiconductor Black phosphorus; the n-type semiconductor is combined with the p-type semiconductor to form a PN junction. The invention also discloses a preparation method of the two-dimensional black phosphorus PN junction. The black phosphorus PN junction provided by the invention has properties such as unidirectional conductivity and photovoltaic special effect, and is suitable for preparing micro-nano devices such as rectifier diodes, switching diodes, and photovoltaic cells. The semiconductor process is compatible, which is of positive significance to the wide application of black phosphorus in many fields.

Description

technical field [0001] The invention relates to a method for preparing a two-dimensional semiconductor PN junction, in particular to a two-dimensional black phosphorus PN junction, its preparation method and applications, such as applications in rectifier diodes, switching diodes, photodetectors, and photovoltaic cells. Background technique [0002] Since graphene was first discovered in 2004, two-dimensional materials have received extensive research boom because of their unique properties. Graphene has excellent mechanical, electrical, optical, thermal and other properties, and has great application potential in many fields such as transparent conductive electrodes, supercapacitors, flexible devices, and batteries. But the disadvantage of graphene is that it has no band gap, so it cannot be used in logic circuits. Transition metal dichalcogenides (TMDs) such as MoS 2 、WS 2 Other two-dimensional materials have a band gap, but the band gap range is narrow (1.2-1.8eV), whi...

AI Technical Summary

Problems solved by technology

For example, some researchers prepared black phosphorus-MoS 2 heterojunction, the method requires exfoliation-transferred MoS 2 , also need to use self-alignment technology, the process is more complicated, and the yield is low

Another researcher used the double back gate structure to prepare black phosphorus PN junction, but this method also needs to use self-alignment technology, so the efficiency is low

Images