WSe2 thin sheet/In2O3 nanowire composite-structure near-infrared photoelectric detector and fabrication method thereof

A tungsten diselenide, near-infrared light technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low light utilization efficiency, inhibit the photoresponsivity and detection rate of devices, and achieve high response and high detection rate. Effect

Inactive Publication Date: 2018-02-16
CHINA ACADEMY OF SPACE TECHNOLOGY
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  • Application Information

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Problems solved by technology

However, the thin atomic-level thickness of low-dimensional materials also prevents them from fully absorbing when interacting with light like bulk materials, so the light utilization efficiency is very low, which in turn inhibits the photoresponsivity and detection rate of the device.

Method used

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  • WSe2 thin sheet/In2O3 nanowire composite-structure near-infrared photoelectric detector and fabrication method thereof
  • WSe2 thin sheet/In2O3 nanowire composite-structure near-infrared photoelectric detector and fabrication method thereof
  • WSe2 thin sheet/In2O3 nanowire composite-structure near-infrared photoelectric detector and fabrication method thereof

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preparation example Construction

[0031] Such as figure 2 As shown, a preparation method of a tungsten diselenide flake / indium oxide nanowire composite structure near-infrared photodetector, the steps of the method include:

[0032] (1) Growth of In by chemical vapor deposition 2 o 3 Nanowires;

[0033] (2) In the preparation of step (1) 2 o 3 Physical transfer of nanowires to Si / SiO 2 (100nm) on the substrate;

[0034] (3) Using electron beam lithography technology and thermal evaporation metal electrode to prepare single In 2 o 3 Nanowire back-gate transistor devices;

[0035] (4) Using the method of mechanical exfoliation on Si / SiO 2 Preparation of WSe on (285nm) Substrate 2 nanosheets;

[0036] (5) WSe prepared by step (4) 2 The nanoflakes are transferred to the In prepared in step (3) 2 o 3 A composite structure of tungsten diselenide flake / indium oxide nanowire is obtained on the back gate transistor device of the nanowire.

[0037] In the described step (5), the WSe 2 The nanoflakes tra...

Embodiment

[0041] (1) Growth of In by chemical vapor deposition 2 o 3 nanowires and their physical transfer to Si / SiO 2 (100nm) substrate, the source-drain (S-D) metal electrode Cr / Au (15nm / 50nm) was deposited by electron beam lithography technology and thermal evaporation technology to prepare a single In 2 o 3 Nanowire back gate transistor device, heavily doped p-type Si substrate as back gate electrode;

[0042] (2) Using the method of mechanical exfoliation on Si / SiO 2 Preparation of WSe on (285nm) Substrate 2 nanoflakes, due to the two-dimensional material WSe 2 As the number of layers increases from single layer to multilayer, the bandgap width decreases from 1.7eV to 1.2eV, so in order to respond to the near-infrared band, choose thick WSe with narrower bandgap 2 nanoflakes, and the WSe 2 flakes transferred to In 2 o 3 On the back-gate transistor devices of nanowires, composite structures such as figure 1 shown, the source-drain bias is V ds , the back gate bias is V g...

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Abstract

The invention relates to a WSe2 thin sheet / In2O3 nanowire composite-structure near-infrared photoelectric detector and a fabrication method thereof. The near-infrared photoelectric detector is a low-dimensional material composite-structure near-infrared photoelectric detector, particularly, band bending is formed at an interface of two materials by means of difference of a work function between WSe2 and an In2O3 nanowire, carriers in the WSe2 is stimulated by near-infrared light and are accumulated at the interface, a formed local electric field is used for controlling the channel conductivityof the In2O3 nanowire, meanwhile, a device works in a depletion region with an extremely low dark current by externally applying a bias voltage, and the light response rate and the detection rate ofthe near-infrared detector are improved.

Description

technical field [0001] The invention relates to a near-infrared photodetector with a composite structure of tungsten diselenide flakes / indium oxide nanowires and a preparation method thereof. The near-infrared photodetector is a near-infrared photodetector with a composite structure of low-dimensional materials. Tungsten Selenide (WSe 2 ) and indium oxide (In 2 o 3 ) work function difference between the nanowires, forming a band bending at the interface of these two materials, near-infrared light excites WSe 2 The carriers in the accumulation in the interface, the formed local electric field on In 2 o 3 The conductivity of the nanowire channel is regulated, and at the same time, the device works in the depletion region with extremely low dark current through the application of an external bias voltage, and the photoresponsivity and detection rate of the near-infrared detector are improved. Background technique [0002] Existing infrared detectors usually use traditional...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/032H01L31/0352H01L31/18
CPCH01L31/032H01L31/035227H01L31/09H01L31/18Y02P70/50
Inventor 郭楠刘军库贾怡肖林
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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