Strong anti-mismatch high-efficiency power amplifier based on transistor stacking technology

Abstract

The invention discloses a strong anti-mismatch high-efficiency power amplifier based on a transistor stacking technology. The power amplifier comprises a -45-degree phase-shifting input matching network, a +45-degree phase-shifting input matching network, a double-path balance type three-stack power amplification network, a +45-degree phase-shifting output matching network, a -45-degree phase-shifting output matching network, a first power supply bias network and a second power supply bias network. According to the power amplifier, a three-stack transistor amplification network is adopted to realize an amplification function of the balance type amplifier, so that the power gain and the power capacity of the balance type power amplifier are improved, and meanwhile, a three-stage T-shaped filtering type phase-shifting circuit is used for realizing the + / -45-degree phase-shifting control of two paths of balance signals and input and output impedance matching, so that the anti-mismatch characteristic of the amplifier is greatly improved on the premise of ensuring low insertion loss and high efficiency, and thus the stability and the reliability of the circuit are improved. A strong anti-mismatch high-efficiency power amplifier chip circuit realized by the invention is high in output power, high in power gain and small in area.

Description

technical field [0001] The invention belongs to the technical field of field-effect transistor microwave millimeter wave power amplifiers and integrated circuits, and in particular relates to the design of a strong anti-mismatch high-efficiency power amplifier based on transistor stacking technology. Background technique [0002] With the rapid development of 3G, 4G-LTE and other civil communication markets, as well as the early layout of 5G communication, microwave and millimeter wave front-end transmitters are also developing in the direction of high performance, high integration, and high efficiency in microwave and millimeter wave bands; in addition, due to MIMO With the wide application of technology, the system puts a severe test on the anti-mismatch characteristics of the terminal power amplifier. Therefore, the market urgently needs strong anti-mismatch and high-efficiency power amplifier chips for microwave and millimeter wave frequency bands. [0003] However, in t...

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Problems solved by technology

[0004] (1) Strong anti-mismatch characteristics and high-efficiency indicators in traditional balanced amplifiers restrict each other: since the output of the power amplifier in the microwave and millimeter-wave front-end transmitter needs to be connected to an antenna with poor standing wave characteristics, the antenna is not suitable for microwave The anti-mismatch characteristics of millimeter-wave power amplifiers pose a severe challenge; the existing balanced power amplifiers based on the Lange structure to achieve a 90° phase shift enhance the anti-mismatch characteristics, and often introduce large The in-band insertion loss reduces the efficiency of the power amplifier

Therefore, strong anti-mismatch characteristics and high efficiency indicators in traditional balanced amplifiers are mutually restricted

[0005] (2) It is difficult to design high-power and high-gain indicators of traditional balanced amplifiers in the microwave and millimeter wave bands: driven by the future 5G market, microwave and millimeter wave front-end transmitters urgently need high gain, high power, high efficiency, and strong mismatch resistance Power amplifiers, but the existing millimeter-wave frequency band application circuits must use semiconductor process transistors with small gate lengths. Affected by their low breakdown voltage, the voltage swing of power amplifiers will be greatly limited, so it is also limited The power capacity of the power transistor

[0008] In order to improve the anti-mismatch characteristics of the circuit, designers often need to use the Lange structure to achieve a 90° phase shift of the two balanced structure signals, and also reduce the introduced in-band loss as much as possible, while ensuring that the two balanced signals have similar The same in-band loss, in addition, it is necessary to cooperate with other matching structures to achieve impedance matching between the input of the transistor and the input port, which greatly increases the complexity and difficulty of circuit design

In order to compromise various design indicators, designers often need to introduce a certain in-band loss to achieve a 90° phase shift and impedance matching, which greatly reduces the efficiency indicators of the power amplifier.

[0009] (2) It is difficult to match the impedance of high-power transistors in the millimeter wave band

[0010] Since the amplifier works in the millimeter wave band, the power capacity of a single transistor is limited. In order to obtain a higher power capacity, the designer often needs a 2n times power combining structure. This structure often leads to a very low optimal load impedance of the output network, which is This kind of low load impedance will make the impedance matching of microwave and millimeter wave band balanced amplifiers more difficult

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