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Method for reducing power consumption of transparent and conductive oxide thin film device by using micro structure adjustment and control

An oxide thin film, transparent and conductive technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems affecting the stability of devices, affecting the stability of TCO thin films, and limiting the application range of TCO thin films. Achieve the effect of reducing power consumption, reducing Joule heat, and improving stability

Active Publication Date: 2018-03-06
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are always various defects in TCO films, which not only affect the stability of TCO films, but also limit the application range of TCO films.
For example, the currently prepared TCO thin film devices generate a lot of Joule heat during use, which affects the stability of the device

Method used

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  • Method for reducing power consumption of transparent and conductive oxide thin film device by using micro structure adjustment and control
  • Method for reducing power consumption of transparent and conductive oxide thin film device by using micro structure adjustment and control
  • Method for reducing power consumption of transparent and conductive oxide thin film device by using micro structure adjustment and control

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The specific steps of this embodiment are as follows:

[0027] S100 Substrate pretreatment.

[0028] In this embodiment, the substrate is made of quartz glass whose length and width are both 2 cm.

[0029] This step is specifically as follows: sequentially using acetone, absolute ethanol, and deionized water to ultrasonically clean the quartz glass, and then using high-purity nitrogen to dry the quartz glass to obtain a pretreated clean substrate.

[0030] S200 uses magnetron sputtering coating method to prepare TCO film on the substrate.

[0031] This step is specifically:

[0032] The S210 target is installed on the base of the magnetron sputtering coating equipment, and the pretreated clean substrate is glued to the base of the magnetron sputtering coating equipment with conductive adhesive. In this embodiment, the target material is AZO target material from Beijing Zhongnuo New Materials Co., Ltd., the purity of which is 99.999%, and the doping ratio of Al in ZnO...

Embodiment 2

[0054] The specific steps of this embodiment are as follows:

[0055] S100 Substrate pretreatment.

[0056] This step is specifically the same as that of Embodiment 1, and will not be repeated here.

[0057] S200 uses the magnetron sputtering coating method to prepare TCO thin film samples on the substrate.

[0058] This step is specifically:

[0059] The S210 target is installed on the base of the magnetron sputtering coating equipment, and the pretreated clean substrate is glued to the base of the magnetron sputtering coating equipment with conductive adhesive. In this example, the target material is the FTO target material of Beijing Zhongnuo New Materials Co., Ltd., its purity is 99.999%, and F is in SnO 2 The doping ratio in is 5 at.%.

[0060] S220 Close the chamber of the magnetron sputtering coating equipment, turn on the mechanical pump and the molecular pump, and evacuate the chamber until the air pressure in the chamber is lower than 4.0×10 -4 Pa.

[0061] S23...

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Abstract

The invention discloses a method for reducing power consumption of a transparent and conductive oxide thin film device by using micro structure adjustment and control. The method comprises a step of treating a transparent and conductive oxide thin film by adopting an SCCO2 method, specifically: adding deionized water into a reaction kettle of SCCO2 equipment; putting the transparent and conductiveoxide thin film into the reaction kettle, but enabling the transparent and conductive oxide thin film to be not in contact with the deionized water, and sealing the reaction kettle; heating the solution in the reaction kettle to 55 to 75 DEG C, pressurizing CO2 to 10 to 13 MPa, then continuously heating the solution to 120 to 150 DEG C, and carrying out thermal reaction for 30 to 90 min. According to the method for reducing the power consumption of the transparent and conductive oxide thin film device by using micro structure adjustment and control, the defects in the transparent and conductive oxide thin film are filled up by a simple and easy-to-control method; on the premise of not affecting the optical characteristic of the transparent and conductive oxide thin film, the electrical property of the transparent and conductive oxide thin film is effectively changed, so that joule heat of the transparent and conductive oxide thin film device, which is generated in a use process, is reduced.

Description

technical field [0001] The invention belongs to the technical field of thin film microstructure regulation, and in particular relates to a method for reducing power consumption of transparent conductive oxide thin film devices by utilizing microstructure regulation. Background technique [0002] Transparent conductive oxide (TCO) thin films have great application prospects in the field of thin-film devices due to their excellent optical and electrical properties. ZnO, SnO 2 Thin-film materials are widely used in liquid crystal displays, thin-film transistors, light-emitting diodes, supercapacitors, etc. In recent years, ZnO, SnO 2 N-type doping, such as doping Al, F, Sb, In, Ga, etc., can effectively improve the conductivity of TCO films, and related TCO films have been applied to optoelectronic devices, microelectronics and integrated circuits. However, there are always various defects in TCO films, which not only affect the stability of TCO films, but also limit the app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/35C23C14/08
CPCC23C14/08C23C14/35C23C14/5806C23C14/5853
Inventor 何春清周亚伟李静静尹崇山张笑维
Owner WUHAN UNIV
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