Discrete transistor with dual cylindrical grids and embedded with U-shaped channel and manufacturing method of transistor

Abstract

The invention relates to a discrete transistor with dual cylindrical grids and embedded with a U-shaped channel and a manufacturing method of the transistor. A highly-integrated metal-oxide-semiconductor field-effect transistor of which distance of 1 nanometer is kept between a source electrode and a drain electrode can be achieved. A cylindrical grid electrode is employed, and the control capability of the grid electrode on a U-shaped single-crystal channel is ensured on the premise that the grid electrode is not introduced to a groove formed by U-shaped single crystal, namely, the integration is improved, and the control capability of the grid electrode on the channel is ensured; and meanwhile, a cylindrical auxiliary-control electrode and the cylinder grid electrode which are separatelycontrolled are employed, the conflicts that the doping concentration of a conventional junction-free transistor channel is excessively low to cause that source-drain resistance is increased and the doping concentration is excessively high to cause that the mobility and the stability of the device are reduced are effectively solved, and thus, the transistor is suitable for promotion and application.

Description

Technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a discrete double cylindrical gate embedded U-shaped channel transistor suitable for ultra-high integration integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] With the continuous reduction of the size of the basic unit MOSFETs of integrated circuits, the distance between the source electrode and the drain electrode has shrunk to several tens of nanometers. On the one hand, the shortening of the channel leads to the weakening of the control ability of the gate electrode and the increase of the subthreshold swing. , The leakage current increases, the static power consumption increases, the drain electrode voltage causes the potential barrier to decrease, which leads to the drift of the threshold voltage, and the anti-breakdown ability significantly decreases. In order to improve the gate electro...

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Problems solved by technology

[0004] In order to solve the problem that the inventor proposed before that the internal structure of the groove of the U-shaped channel field effect transistor is complicated, the integration degree is difficult to further improve, and the contradictory relationship between the high mobility of single crystal silicon and the low source resistance, etc., the present invention proposes to separate the two Barrel gate embedded U-shaped channel transistor and manufacturing method thereof

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