Solidly mounted film bulk acoustic resonator adopting piezoelectric single crystal foil and preparation method thereof

A piezoelectric single crystal and thin-film bulk acoustic wave technology, applied in electrical components, impedance networks, etc., can solve problems such as the influence of foil single crystal characteristics, large damage to crystal structure integrity, etc., and achieve the effect of optimizing device performance

Pending Publication Date: 2018-03-13
CETC DEQING HUAYING ELECTRONICS
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  • Description
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Problems solved by technology

[0016] The characteristics of the slicing method are: it is easy to make ultra-thin foils with a thickness of tens of nanometers to several microns, but io

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  • Solidly mounted film bulk acoustic resonator adopting piezoelectric single crystal foil and preparation method thereof
  • Solidly mounted film bulk acoustic resonator adopting piezoelectric single crystal foil and preparation method thereof
  • Solidly mounted film bulk acoustic resonator adopting piezoelectric single crystal foil and preparation method thereof

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Embodiment 1

[0058] The manufacturing procedure of embodiment one is as Figure 2~Figure 8 It belongs to conventional microelectronics process technology. The invention adopts two single-sided polished wafers of the same size: a silicon substrate and a piezoelectric single crystal, and the polished surface is used as the front.

[0059] figure 2 It is the CFBAR embodiment 1 process flow 1: cleaning the substrate silicon wafer 5 and depositing the Bragg acoustic wave reflection structure layer 4 .

[0060] image 3 It is CFBAR embodiment 1 process flow 2: After cleaning the original piezoelectric single wafer 6, deposit a metal film on the front side, and make the lower electrode 3 by photolithography etching.

[0061] Figure 4 It is CFBAR embodiment 1 process flow 3: deposit passivation layer 7 on the front of original piezoelectric single wafer 6, generally SiO 2 Dielectric film. The thickness of the passivation layer is greater than that of the existing electrodes, so it is neces...

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Abstract

The invention aims at providing a technical scheme of producing a solidly mounted film bulk acoustic resonator by adopting a piezoelectric single crystal foil. The piezoelectric single crystal foil solidly mounted film bulk acoustic resonator is composed of a substrate with a Bragg acoustic reflection structural layer and a sandwich active structure which is formed by upper and lower metal electrodes and a piezoelectric body sandwiched between the upper and lower metal electrodes; and the piezoelectric body is the piezoelectric single crystal foil. The solidly mounted film bulk acoustic resonator adopting the piezoelectric single crystal foil and the preparation method thereof have the advantages that 1, the crystal perfection of the piezoelectric single crystal foil is not damaged, and the piezoelectric single crystal foil is a perfect single crystal; 2, the crystal and the crystal orientation can be selected freely, and the device performance can be optimized; and 3, the substrate material can be selected freely and the device performance can be optimized.

Description

technical field [0001] The invention belongs to the field of radio-frequency filters, and in particular relates to a fixed film bulk acoustic wave resonator. Background technique [0002] Quartz crystal oscillator element is a bulk acoustic wave element based on the piezoelectric / inverse piezoelectric characteristics of quartz crystal, which is widely used in circuit frequency sources. Since the resonant frequency of the quartz crystal oscillator is inversely proportional to the thickness of the quartz crystal, its current resonant frequency is only tens of megahertz (MHz), which cannot meet the rapid extension of the modern radio spectrum. [0003] Using planar metal interdigital transducers and metal reflective grid arrays on piezoelectric substrates to excite and receive surface acoustic waves, the method of increasing the resonance frequency of the device is converted from thinning the thickness of the longitudinal structure to a horizontal structure to improve the elect...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/17
CPCH03H3/02H03H9/171H03H2003/023
Inventor 陈培杕刘敬勇黄润华於保伟程胜军
Owner CETC DEQING HUAYING ELECTRONICS
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