High-temperature pressure and temperature integrated composite sensor

A composite sensor, pressure and temperature technology, applied to thermometers, measurement of properties and forces using piezoelectric devices, instruments, etc., can solve the problems of large volume, poor compatibility, and inability to meet large-range pressure measurement, etc., to achieve small size, assembly The process is simple and the effect of solving the composite problem of pressure and temperature sensors

Inactive Publication Date: 2018-03-16
NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problems that the existing pressure-temperature composite sensor has large volume, poor compatibility and cannot satisfy large-scale pressure measurement under high-temperature conditions, and now provides a high-temperature pressure-temperature integrated composite sensor

Method used

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specific Embodiment approach 1

[0021] Specific implementation mode one: refer to figure 1 and 2 Describe this embodiment in detail. The high temperature, pressure and temperature integrated composite sensor described in this embodiment includes: a tube base 1, a pressure ring 2, a corrugated diaphragm 3, a pressure sensitive chip 5, a temperature sensitive chip 7, a ceramic ring 9, a pressure lead Line post 10 and temperature lead-out line post 11;

[0022] The tube base 1 is cylindrical, and the top of the tube base 1 has a large circular groove 101, the ceramic ring 9 is located in the circular large groove 101, and the pressure sensitive chip 5 is located in the ring of the ceramic ring 9, and through the eutectic Welding 6 is welded in the center of the bottom of the large circular groove 101, the corrugated diaphragm 3 covers the opening end of the large circular groove 101, the gap between the corrugated diaphragm 3 and the pressure sensitive chip 5 is filled with high temperature silicone oil 8, the...

specific Embodiment approach 2

[0034] Embodiment 2: This embodiment is a further description of the high-temperature pressure-temperature integrated composite sensor described in Embodiment 1. In this embodiment, the pressure sensitive chip 5 is an SOI pressure sensitive chip.

[0035] The pressure-sensitive chip 5 uses an SOI substrate as a substrate material, and the silicon micro-piezoresistive principle is pressure-sensitive. The chip uses the upper layer of single crystal silicon as the material for pressure-sensitive resistors, and four pressure-sensitive resistors are produced. The circuit is connected as a Wheatstone bridge to sense the pressure signal. The pressure-sensitive resistor and the substrate are implanted through MEMS technology and high-energy oxygen ions technology to form SiO 2 The isolation layer, which removes the PN isolation junction in the traditional diffused silicon piezoresistive sensitive chip, is made of SiO 2 The layer realizes the full dielectric isolation of the device an...

specific Embodiment approach 3

[0036]Embodiment 3: This embodiment is a further description of the high temperature, pressure and temperature integrated composite sensor described in Embodiment 1. In this embodiment, the temperature sensitive chip 7 is a Pt1000 temperature sensitive chip.

[0037] The temperature sensitive chip 7 uses a platinum thin film resistor for temperature testing. The chip is designed as a three-layer structure of ceramic substrate, platinum film and surface encapsulation, and the platinum film is tightly attached between the substrate and the encapsulation layer. The thermal properties of the three-layer materials of the temperature-sensitive chip are consistent, so that the compressive strain of the substrate on the platinum film and the compressive strain caused by the encapsulation layer cancel each other out, which not only broadens the operating temperature of the platinum film thermistor, but also improves its reliability. , stability and repeatability. A standard Pt1000 res...

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Abstract

A high-temperature pressure and temperature integrated composite sensor relates to the field of pressure and temperature composite sensors. The invention aims to solve the problem that the existing pressure and temperature composite sensor is large, has poor compatibility and cannot measure pressure in a large range at high temperature. A ceramic ring is disposed in a large circular groove. A pressure sensitive chip is disposed in the ring of the ceramic ring. A corrugated diaphragm covers the open end of the large circular groove. The gap between the corrugated diaphragm and the large circular groove is filled with high-temperature silicon oil. An oil injection hole is plugged by a plugging steel ball. A pressure ring is fixed to the opening of the large circular groove. A pressure lead-out wire column is disposed in an end column lead-out through hole. The inner wall of the end column lead-out through hole is of a double-step structure. The pressure lead-out wire column is provided with two annular slots along the circumference thereof. A temperature sensitive chip is disposed in a small circular groove. The open end of the small circular groove and the tail end of the end columnlead-out through hole are plugged by high-temperature sealing glue. The high-temperature pressure and temperature integrated composite sensor of the invention is suitable for measuring temperature and large-range pressure at a high temperature of 200 DEG C.

Description

technical field [0001] The invention belongs to the field of pressure and temperature composite sensors. Background technique [0002] There are two main types of existing pressure-temperature composite sensors: [0003] One is to assemble independent pressure sensors and temperature sensors together. The distance between the two sensors is relatively long, and the pressure signal and temperature signal in a small or local area cannot be sensed at the same time. This pressure sensor and temperature sensor are separately packaged and It is isolated from the measured medium, resulting in a larger volume of the overall sensor and higher manufacturing costs; [0004] The other is to make a single-chip sensor for composite measurement of pressure and temperature. The pressure sensor and temperature sensor are made on the same chip, but since the standard sensitive film of the temperature sensor is a platinum film, the force-sensitive resistor of the pressure sensor is etched on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/16G01K7/18
CPCG01L1/16G01K7/18
Inventor 耿振亚吴亚林张鹏李慕华
Owner NO 49 INST CHINESE ELECTRONICS SCI & TECH GRP
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