Preparation method of ultra-high purity aluminum sample for GDMS detection and impurity analysis method of ultra-high purity aluminum sample

Abstract

The invention discloses a preparation method of an ultra-high purity aluminum sample for GDMS detection and an impurity analysis method of the ultra-high purity aluminum sample, relating to the technical field of analysis of high-purity metal components. The preparation method comprises the step of carrying out ultrasonic acid pickling on a to-be-tested ultra-high purity aluminum sample, wherein acid pickling liquid is mainly prepared by mixing nitric acid, hydrofluoric acid and water in a volume ratio of 1 to (2-5) to (5-8). According to the preparation method, the problems that existing methods are not suitable for ultra-high purity aluminum samples, Na and Si are easily introduced in a sample preparation process, and then the detection is slightly high or the stabilization time of an element detection value is long are alleviated. By utilizing a sample preparation method disclosed by the invention, the problem that Na and Si in the ultra-high purity aluminum sample are easily introduced can be effectively alleviated, meanwhile, impurities can be effectively removed, the formation of an oxidation layer on the surface is effectively inhibited, the GDMS detection time is effectively shortened, and the accuracy, stability and repeatability of detection are guaranteed.

Description

technical field [0001] The invention relates to the technical field of high-purity metal component analysis, in particular to a method for preparing an ultra-high-purity aluminum sample used for GDMS detection and an impurity analysis method for an ultra-high-purity aluminum sample. Background technique [0002] Ultra-high-purity aluminum refers to aluminum with a purity of 99.999% (5N) and above. Ultra-high-purity aluminum is mainly used to make sputtering targets, and then used for semiconductor coating. Due to the advantages of low resistivity, easy deposition, easy etching, and mature technology, the aluminum-coated thin film has become a popular choice for integrated circuits, discrete devices, and liquid crystals. Display key materials in other fields. The purity and impurity content of ultra-high-purity aluminum directly affect the performance of aluminum thin films, thereby affecting the performance of related semiconductor components. [0003] GDMS (Glow Discharge...

AI Technical Summary

Problems solved by technology

For samples with low purity, the existing methods can meet the detection requirements, but for ultra-high-purity aluminum samples used for sputtering targets, the existing methods have their limitations: mainly due to the presence of Na and Si in the sample preparation process. Easy to introduce (Na is mainly introduced from the surrounding environment, such as sweat stains on hands, and Si is mainly introduced due to the high content of Si in the air), the amount of introduction is easily higher than the content of the element in the sample itself, resulting in high detection or stable element detection value The time is long (the content of Na and Si is high at the beginning of the detection process, as the sputtering time prolongs, the surface of the sample is continuously sputtered off layer by layer, and the content of impurities introduced on the surface gradually decreases), and the soaking and pickling time is too long A long time will cause surface impurities to gather at the grain boundary and easily form a thicker oxide layer, resulting in unstable test results

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