A kind of preparation method of micro-led light-emitting display device
A light-emitting display device and device technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of reducing the size of soldered chips, prone to false soldering, and low yield rate, achieving reduction in soldering size, Efficiency and yield rate improvement, the effect of high yield rate
Active Publication Date: 2020-04-10
FUZHOU UNIV
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[0003] The existing traditional metal ball welding is to prepare metal balls at specific positions on the LED chip and CMOS backplane, and then align and weld them together. After the metal electrode material is made on the chip, the metal electrode material at other positions is removed by photolithography and other means. A high-precision alignment system is required, and it is difficult to further reduce the size of the soldered chip. The equipment is expensive, low in efficiency, and prone to false soldering. , resulting in low yield
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[0031] Such as figure 1 As shown, a method for preparing a Micro-LED light-emitting display device includes:
[0032] S1: Depositing an n-type GaN epitaxial layer 12, a multi-quantum well layer 13, and a p-type GaN epitaxial layer 14 respectively from bottom to top on the clean GaN substrate 11;
[0033] S2: Using photolithography and etching methods, isolation trenches are made on the deposited n-type GaN epitaxial layer 12, multiple quantum well layer 13 and p-type GaN epitaxial layer 14, to form a Micro-LED unit device array containing multiple unit devices ;
[0034] S3: fabricating a p-type ohmic contact layer 15 on the p-type GaN epitaxial layer 14 of each unit device in the array of Micro-LED unit devices;
[0035] S4: A layer of conductive paste is uniformly coated on the surface of a clean first template 17, and the p-type ohmic contact layer 15 of the Micro-LED unit device array is placed on the conductive paste. The paste is in contact with the p-type ohmic contact layer 1...
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The invention relates to a preparation method of a Micro-LED light emitting display device. The preparation method comprises the steps of preparing a GaN-based epitaxial layer firstly; next, forming aMicro-LED unit device array by adopting a chip process; next, manufacturing an ohmic contact layer, and enabling the Micro-LED unit device array to be connected on a CMOS or a TFT back plate througha micro contact printing mode; and finally, adopting a laser lift-off mode, realizing lift-off between the epitaxial layer and the GaN substrate, and enabling the Micro-LED unit device array to be connected to another substrate through metal welding, bonding or micro contact printing mode, so as to form the Micro-LED light emitting display device. Compared with the prior art, the preparation method is simple in process, high in yield and low in cost; and in addition, the Micro-LED light emitting display device can be prepared on glass, a silicon substrate or even a polymer flexible substrate.
Description
Technical field [0001] The present invention relates to the field of novel semiconductor displays, in particular to a method for preparing a Micro-LED light emitting display device. Background technique [0002] Micro-LED is a display technology that miniaturizes and matrixes the traditional LED structure, and uses CMOS integrated circuit technology to make a drive circuit to realize the addressing control and individual drive of each pixel. Because Micro-LED technology is stronger than LCD and OLED technology in terms of brightness, life, contrast, response time, energy consumption, viewing angle and resolution, and it is self-luminous, simple in structure, small in size and energy saving The advantages of this product have been regarded by many manufacturers as the next-generation display technology and have begun to actively deploy. In the preparation process of Micro-LED, in order to continuously improve the resolution and luminous stability of Micro-LED, the preparation pro...
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IPC IPC(8): H01L21/82H01L27/15H01L33/36
CPCH01L21/82H01L27/156H01L33/36H01L2933/0016
Inventor 周雄图张永爱严群郭太良林金堂叶芸翁雅恋
Owner FUZHOU UNIV