Magnetic tunnel junction with high perpendicular magnetic anisotropy

A magnetic tunnel junction, anisotropic technology, applied in the field of non-volatile magnetic memory and magnetic logic, can solve the requirement of long-term reliable storage of data, low storage density of magnetic random access memory, and low spin transfer torque reversal efficiency and other problems, to achieve the effect of high spin transfer torque inversion efficiency, strong perpendicular magnetic anisotropy, and small cross-sectional size.

Active Publication Date: 2018-04-20
BEIHANG UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

When the thermal stability factor drops below 60, it generally cannot meet the requirements for long-term reliable storage of data
Secondly, due to the weak interface perpendicular magnetic anisotropy, in order to maintain sufficient thermal stability (for example, the thermal stability coefficient is greater than 60), the cross-sectional size of the magnetic tunnel junction is required to be large and the thickness of the free layer is small, such as Figure 2B , resulting in a lower storage density of the MRAM
In addition, the smaller thickness of the free layer results in a ...

Method used

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  • Magnetic tunnel junction with high perpendicular magnetic anisotropy
  • Magnetic tunnel junction with high perpendicular magnetic anisotropy
  • Magnetic tunnel junction with high perpendicular magnetic anisotropy

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Embodiment 1

[0042] In this embodiment, the buffer layer, the ferromagnetic layer 1, the barrier layer, the ferromagnetic layer 2 and the cover layer are deposited on the thermally oxidized silicon substrate in the order from bottom to top by magnetron sputtering, such as Figure 4A shown. Among them, the material of the buffer layer is Ta, the thickness is 5nm; the material of the ferromagnetic layer is Co 20 Fe 60 B 20 , the thickness is 20nm; the material of the barrier layer is MgO, the thickness is 1nm; the material of the ferromagnetic layer 2 is Co 20 Fe 60 B 20 , with a thickness of 30nm; the material of the covering layer is Ta, with a thickness of 5nm. Finally, processing such as photolithography and etching is performed, and the cross-sectional shape is circular with a diameter of 10 nm. The buffer layer can have functions such as reducing surface roughness and promoting the formation of the growth crystal direction of the multilayer film, and the covering layer can have f...

Embodiment 2

[0048] In this embodiment, the buffer layer, the ferromagnetic layer 1, the barrier layer, the ferromagnetic layer 2 and the cover layer are deposited on the thermally oxidized silicon substrate in the order from bottom to top by magnetron sputtering, such as Figure 4B shown. Among them, the material of the buffer layer is Ta, the thickness is 5nm; the material of the ferromagnetic layer is Co 20 Fe 60 B 20 , the thickness is 30nm; the material of the barrier layer is MgO, the thickness is 1nm; the material of the ferromagnetic layer 2 is Co 20 Fe 60 B 20, with a thickness of 20nm; the material of the covering layer is Ta, with a thickness of 5nm. Finally, processing such as photolithography and etching is performed, and the cross-sectional shape is circular with a diameter of 10 nm. The buffer layer can have functions such as reducing surface roughness and promoting the formation of the growth crystal direction of the multilayer film, and the covering layer can have fu...

Embodiment 3

[0054] In this embodiment, the buffer layer, the ferromagnetic layer 1, the barrier layer, the ferromagnetic layer 2 and the covering layer are deposited on the thermally oxidized silicon substrate in sequence from bottom to top by magnetron sputtering. Wherein, the material of buffer layer is W, and the thickness is 8nm; The material of ferromagnetic layer 1 is Co 40 Fe 40 B 20 , the thickness is 100nm; the material of barrier layer is MgO, the thickness is 1.5nm; the material of ferromagnetic layer 2 is Co 40 Fe 40 B 20 , with a thickness of 120nm; the material of the covering layer is W, with a thickness of 5nm. Finally, photolithography, etching and other processing are performed, and the cross-sectional shape is circular with a diameter of 1nm. The buffer layer can have functions such as reducing surface roughness and promoting the growth crystal orientation of the multilayer film, and the covering layer can have functions such as anti-oxidation and reducing surface ...

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Abstract

The invention relates to a magnetic tunnel junction with high perpendicular magnetic anisotropy, which structurally and sequentially comprises a first ferromagnetic layer, a barrier layer and a secondferromagnetic layer from bottom to top. The magnetic tunnel junction is characterized in that a size of a cross section of the magnetic tunnel junction is between 1nm to 150nm; thicknesses of both the first ferromagnetic layer and the second ferromagnetic layer are greater than 6nm, and the thicknesses of both the first ferromagnetic layer and the second ferromagnetic layer are greater than halfthe size of the cross section; and a thickness of the barrier layer is 0.2 to 10nm. Compared with the prior art, the magnetic tunnel junction has the advantages of high perpendicular magnetic anisotropy, high heat stability, small size of the cross section, high spin transfer torque turnover efficiency, small layer number of thin films and the like.

Description

【Technical field】 [0001] The invention relates to a magnetic tunnel junction with strong perpendicular magnetic anisotropy, which belongs to the technical field of nonvolatile magnetic memory and magnetic logic. 【Background technique】 [0002] Magnetic random access memory (MRAM) and magnetic logic have the advantages of non-volatility, fast read and write speed, low power consumption, unlimited erasing and writing, etc., and have attracted extensive attention from industry and academia. [0003] The core device of magnetic random access memory and magnetic logic is the magnetic tunnel junction (Magnetic Tunnel Junction, MTJ). The basic structure of the magnetic tunnel junction consists of three thin films: ferromagnetic layer, barrier layer, and ferromagnetic layer. When the magnetization directions of the two ferromagnetic layers are the same, the resistance of the structure is low; when the magnetization directions of the two ferromagnetic layers are opposite, the resist...

Claims

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Application Information

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IPC IPC(8): H01L43/08
CPCH10N50/10
Inventor 赵巍胜彭守仲康旺张有光
Owner BEIHANG UNIV
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