Device and method for plasma enhanced atomic layer deposition of nickel carbide film

A technique of atomic layer deposition and plasma, which is applied in the fields of electrochemical catalysis and supercapacitors, can solve the problems of less research on thin films, and achieve the effects of low cost, high purity and simple structure

Inactive Publication Date: 2018-05-08
BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although several methods including vapor deposition, mechanical alloying and wet chemical synthesis techniques have been used previously to prepare Ni 3 C nanoparticles, however, thinner Ni 3 There are relatively few studies on C thin films

Method used

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  • Device and method for plasma enhanced atomic layer deposition of nickel carbide film
  • Device and method for plasma enhanced atomic layer deposition of nickel carbide film
  • Device and method for plasma enhanced atomic layer deposition of nickel carbide film

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Embodiment Construction

[0036]Such as Figure 5 As shown, a device for plasma-enhanced atomic layer deposition of nickel carbide film, including carrier gas bottle 1, hydrogen bottle 2, AMD-Ni monomer bottle 3, DAD-Ni monomer bottle 4, heating furnace 5, mechanical pump 6 and a radio frequency power supply 7, put the AMD-Ni monomer bottle 3 and the DAD-Ni monomer bottle 4 in the heating jacket 8, wrap the heating tape 9 on the inner wall of the heating jacket 8, and be provided with a reaction chamber 10 in the heating furnace 5, A substrate stage is placed in the reaction chamber 10, and a thermocouple is built into the substrate stage. The gas outlets of the carrier gas bottle 1 are respectively connected to a mass flow controller 11, a flow controller 2 12, and a flow controller 3 13. The outlet of controller one 11 is connected to the inlet of ALD valve one 14 and AMD-Ni monomer bottle 3 in turn, and the outlet of flow controller two 12 is connected to the inlet of ALD valve two 15 and DAD-Ni mon...

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Abstract

The invention discloses a device and method for plasma enhanced atomic layer deposition of a nickel carbide film. A carrier gas cylinder, a hydrogen cylinder, an AMD-Ni monomer cylinder, a DAD-Ni monomer cylinder, a heating furnace, a mechanical pump and a radio frequency power source; the AMD-Ni monomer cylinder and the DAD-Ni monomer cylinder are placed in a heating sleeve; a heating strip is wound on the inner wall of the heating sleeve; a reaction cavity is arranged in the heating furnace; a substrate table is placed in the reaction cavity, and is internally provided with a thermocouple; agas outlet of the carrier gas bottle is connected with a mass flow controller I, a flow controller II and a flow controller III; an outlet of the flow controller I is sequentially connected with an ALD valve I and an inlet of the AMD-Ni monomer cylinder; an outlet of the flow controller II is sequentially connected with an ALD valve II and an inlet of the DAD-Ni monomer cylinder; and an outlet ofthe flow controller III is sequentially connected with an ALD valve III and a port I of a three-way valve.

Description

technical field [0001] The invention relates to the technical fields of electrochemical catalysis and supercapacitors, in particular to a device and method for plasma-enhanced atomic layer deposition of nickel carbide thin films. Background technique [0002] In recent years, transition metal (Fe, Co, and Ni) carbides have attracted more attention due to their high hardness and melting point, good thermal and electrical conductivity, and other properties. Besides, they exhibit excellent catalytic performance in electrical energy storage, oxygen reduction reaction, and hydrogen evolution reaction. Compared with the research on iron carbide and cobalt carbide, nickel carbide (Ni 3 C) is less studied because NiC has a metastable phase at room temperature and decomposes at temperatures above 430 °C. Nickel carbide has two crystal phases, hexagonal phase and rhombohedral phase. However, Ni 3 The C crystal phase is similar to hcp Ni, which hinders the 3 An in-depth study of C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/455C23C16/505
CPCC23C16/32C23C16/4554C23C16/45544C23C16/45553C23C16/505
Inventor 刘忠伟桑利军郭群
Owner BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
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