A kind of white light led packaging method
A technology of LED packaging and LED wicks, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of decreasing quantum efficiency, decreasing light intensity, affecting heat dissipation, etc., to increase heat dissipation effect, improve light transmittance, and increase channels. Effect
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Embodiment 1
[0056] See figure 1 , figure 1It is a flow chart of a white LED packaging method provided by an embodiment of the present invention. The method comprises the steps of:
[0057] Step a, select substrate and LED wick;
[0058] Step b, using a reflow soldering process to weld the LED wick on the substrate;
[0059] Step c, growing a silica gel layer on the LED wick to complete the packaging of the LED.
[0060] Wherein, for selecting the substrate in step a, including:
[0061] Step a1, selecting a plate with a thickness of 0.5-10mm and made of copper;
[0062] Step a2, making a plurality of circular through holes along the width direction and parallel to the plane of the board in the board to form the substrate.
[0063] Further, making a plurality of circular through holes along the width direction and parallel to the plane of the sheet in the sheet in step a2 includes:
[0064] direct casting in the plate or directly drilling on the plate to make a plurality of circular...
Embodiment 2
[0098] See figure 2 and image 3 , figure 2 A flow chart of another white LED packaging method provided by an embodiment of the present invention, image 3 It is a schematic structural diagram of a GaN-based blue light chip provided by an embodiment of the present invention. On the basis of the above embodiments, this embodiment will introduce the process flow of the present invention in more detail. The method includes:
[0099] S1, LED wick selection
[0100] The GaN-based blue light chip is selected as the LED wick, and the structure of the GaN-based blue light chip is as follows: image 3 As shown, the chip includes: substrate material 1, GaN buffer layer 2, N-type GaN layer 3, P-type GaN quantum well wide bandgap material 4, InGaN layer 5, P-type GaN quantum well wide bandgap material 6, AlGaN barrier layer Material 7, P-type GaN layer 8.
[0101] S2. Substrate selection
[0102] S21, support / substrate preparation
Embodiment 3
[0148] Please continue to see image 3 and also see Figure 4 , Figure 5 and Figure 6 , Figure 4 A schematic diagram of an LED package structure provided by an embodiment of the present invention; Figure 5 A schematic diagram of a substrate structure provided by an embodiment of the present invention; Figure 6 It is a schematic diagram of another LED package structure provided by the embodiment of the present invention. This embodiment introduces the LED packaging structure in detail on the basis of the above-mentioned embodiments. The LED packaging structure is as follows: Figure 4 As shown, it includes: a packaging substrate 21 with LED wicks, a lower layer of silica gel 22 , a hemispherical silica gel ball 23 , and an upper layer of silica gel 24 . Among them, the radius R of the hemispherical silica gel ball 23 is greater than 10 microns; the distance L between the hemispherical silica gel ball 23 and the LED wick is greater than 10 microns; the distance betwee...
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