Preparation method of graphene material and graphene material

A technology of graphene and graphite, which is applied in the field of new material preparation, can solve the problems that affect the large-scale development and application of graphene, increase the internal defects of graphene, and easily destroy the crystal structure, so as to improve the magnification, cycle performance, and high-quality structure , the effect of less impurity content

Inactive Publication Date: 2018-05-15
SICHUAN JUCHUANG SHIMOXI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene prepared by this method is easy to destroy its own crystal structure during the process of oxidative intercalation, resulting in the increase of internal defects in graphene, which greatly affects

Method used

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  • Preparation method of graphene material and graphene material
  • Preparation method of graphene material and graphene material
  • Preparation method of graphene material and graphene material

Examples

Experimental program
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Example Embodiment

[0044] Example 1:

[0045] The present invention provides a method for preparing graphene material, including the following steps:

[0046] S1: placing graphene oxide containing metallic impurities and / or non-metallic impurities in a carrier, and putting the carrier in a high-temperature vacuum furnace. In this step, the carrier is made of a graphite bowl, because the melting point of graphite is as high as 3652°C, which is much higher than the melting and boiling point of common metallic and non-metallic impurities, and during the processing, the graphene will not be introduced due to the carrier material Impurities of other elements. But not limited to this, the carrier material can also be other carrier materials with a higher melting point, such as tungsten foil, tantalum carbide carrier, or hafnium carbide carrier. In this step, the graphene oxide is placed in the carrier in a flat manner. The advantage of using flattening is that the flattening makes the heating area of ​​t...

Example Embodiment

[0051] Example 2:

[0052] The present invention provides a method for preparing graphene material, including the following steps:

[0053] S1: placing graphene oxide containing metallic impurities and / or non-metallic impurities in a carrier, and putting the carrier in a high-temperature vacuum furnace. In this step, the carrier is a graphite bowl, and the graphene oxide is placed in the graphite bowl in a flat manner. In this step, the high-temperature vacuum furnace is a purification furnace. The preparation method of graphene oxide is the same as that in Example 1.

[0054] S2: Evacuate the high-temperature vacuum furnace to a negative pressure of 93 Pa. Specifically, the vacuum system of the purification furnace was opened, and the vacuum was pumped to a negative pressure of 93 Pa.

[0055] S3: Set the temperature of the high-temperature vacuum furnace to 2200°C, and heat for 180 minutes.

[0056] After the above three steps are completed, the graphene material is prepared, and ...

Example Embodiment

[0057] Example 3:

[0058] The present invention provides a method for preparing graphene material, including the following steps:

[0059] S1: placing graphene oxide containing metallic impurities and / or non-metallic impurities in a carrier, and putting the carrier in a high-temperature vacuum furnace. In this step, the carrier is a graphite bowl, and the graphene oxide is placed in the graphite bowl in a flat manner. In this step, the high-temperature vacuum furnace is a purification furnace. The preparation method of graphene oxide is the same as that in Example 1.

[0060] S2: Evacuate the high-temperature vacuum furnace to a negative pressure of 93 Pa. Specifically, the vacuum system of the purification furnace was opened, and the vacuum was pumped to a negative pressure of 93 Pa.

[0061] S3: Set the temperature of the high-temperature vacuum furnace to 2200°C and heat for 300 minutes.

[0062] After the above three steps are completed, the graphene material is prepared. After...

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Abstract

The invention discloses a preparation method of a graphene material and a graphene material. The preparation method comprises the following steps: putting graphene oxide containing metal impurities and/or non-metallic impurities into a carrier, and putting the carrier into a high temperature vacuum furnace; vacuumizing the high temperature vacuum furnace to a negative pressure of 60-100Pa; settingthe temperature of the high temperature vacuum furnace to 1250-2500 DEG C, and heating for 60-600min. According to the technical scheme, the high temperature vacuum furnace is used for effectively removing the impurities under the conditions of proper temperature range, vacuum degree range and reaction time according to the difference between the melting and boiling points of graphene and the impurity, the defect of an SP3 structure in the graphene oxide is repaired, and the oxygen-containing functional groups of the graphene oxide are removed, so that the high-quality graphene material withhigher purity is prepared. Furthermore, according to the method, the invention also provides the graphene material.

Description

technical field [0001] The invention relates to the technical field of preparation of new materials, in particular to a method for preparing a graphene material and a graphene material prepared by the method. Background technique [0002] In 2004, physicists Andre Heim and Konstantin Novoselov of the University of Manchester first separated single-layer graphene from graphite by mechanical exfoliation, and studied its quasi- Particle properties, and field effect properties. This discovery quickly triggered a graphene research boom all over the world. In just a few years, the research and application of graphene have developed vigorously. [0003] Graphene is a two-dimensional honeycomb network structure composed of carbon atoms. It is a surface material composed of a single layer of carbon atoms that can be directly peeled off from graphite. The arrangement of carbon atoms in graphene is the same as that of graphite. They all belong to the compound hexagonal crystal struct...

Claims

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Application Information

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IPC IPC(8): C01B32/184
CPCC01B2204/22C01B2204/30C01B2204/32C01P2002/80C01P2004/03
Inventor 李星郭凌江漆长席刘焕明蒋虎南黄迎春
Owner SICHUAN JUCHUANG SHIMOXI TECH CO LTD
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