42 results about "Elemental impurities" patented technology

The invention belongs to the technical field of medicine detection, and particularly relates to an ICPMS (Inductively Coupled Plasma Mass Spectrometry) detection method for element impurities in theophylline. The linear test solution, the blank solution and the theophylline test solution are subjected to ICPMS detection, the content of element impurities in the theophylline test solution is calculated according to an internal standard curve method, and the element impurities are one or more of cadmium, lead, arsenic, mercury, cobalt, vanadium, nickel, lithium, antimony or copper. The method is good in reproducibility and stability, high in accuracy and high in precision.

The invention relates to a method for detecting element impurities of a total flavone extract of immature bitter orange or bitter orange. The method adopts ICP-MS (Inductively Coupled Plasma Mass Spectrometry) to simultaneously determine seven elements, namely arsenic (As), cadmium (Cd), mercury (Hg), lead (Hg), cobalt (Co), nickel (Ni) and vanadium (V). The method for determining the element impurities of the total flavone extract of the immature bitter orange or the fructus aurantii is established, the theoretical basis of the method is sufficient, and the method is proved to be strong in specificity, high in sensitivity and strong in accuracy after verification.

The invention belongs to the technical field of stainless steel, and particularly relates to aluminum oxide inclusion refined low-oxygen low-sulfur stainless steel and a preparation method thereof. The method sequentially comprises the steps of AOD primary smelting, LF furnace external refining, die casting and pretreatment, VIM vacuum induction smelting, VAR vacuum consumable remelting and forging, and precise regulation and control of inclusion types and element impurities are achieved by limiting aluminum source input of all stages, introducing a magnesium treatment mechanism and utilizing a vacuum deoxidation technology. The process is simple and efficient, the cleanliness and service performance of the stainless steel can be remarkably improved, and the method is particularly suitable for the field of semiconductor and high-end equipment manufacturing with strict impurity control requirements.

The invention relates to a method for determining impurities in a fumaric acid Vonorbitan tablet by an ICP-MS (Inductively Coupled Plasma Mass Spectrometry) method, which comprises the following steps: respectively and precisely measuring a mercury standard solution and a proper amount of a mixed standard solution of vanadium, cobalt, nickel, arsenic, cadmium and lead, and diluting with a nitric acid aqueous solution to prepare mixed reference substance stock solutions respectively containing each element; respectively adding an Au stock solution, and preparing the mixed reference substance stock solution into a linear solution by using a nitric acid aqueous solution with the concentration of 5%; precisely taking a proper amount of scandium, indium and bismuth element mixed standard solution, and diluting with a nitric acid aqueous solution to obtain an internal standard solution; the preparation method comprises the following steps: weighing a proper amount of fumaric acid Vonoprazan tablets, putting the fumaric acid Vonoprazan tablets into a microwave digestion tube, adding nitric acid and an Au stock solution, digesting in a microwave digestion instrument, transferring the digested solution into a centrifugal tube, fixing the volume with water, uniformly shaking, and filtering to obtain the fumaric acid Vonoprazan tablets. Performing metal impurity detection and result analysis by adopting an inductively coupled plasma mass spectrometer; element impurities are clearly separated out by purifying existing impurities, so that the content of the corresponding element impurities is accurately detected, and the detection sensitivity is high.

The invention discloses an adsorption and impurity removal system for boron and phosphorus impurities in trichlorosilane, and relates to the technical field of polycrystalline silicon production.The adsorption and impurity removal system for boron and phosphorus impurities in trichlorosilane comprises a reactor, a feeding pipeline and a quantitative structure.The feeding pipeline is arranged on the reactor and used for conveying an adsorbent into the reactor, and the quantitative structure is arranged on the feeding pipeline; the quantitative structure comprises a centralizing box, a detection device, a supporting plate, a pushing plate and a first driver, the centralizing box is arranged on the throwing pipeline, a discharging opening is formed in the centralizing box and communicates with the throwing pipeline, the detection device is arranged at the bottom of an inner cavity of the centralizing box, and the supporting plate is movably arranged in the centralizing box and located at the top of the detection device; the detection device is used for detecting the weight of materials on the supporting plate, the pushing plate is movably arranged in the concentration box, and the first driver is installed on the concentration box, is in driving connection with the pushing plate and is used for driving the pushing plate to push the materials on the supporting plate to move towards the discharging port.

The invention relates to the field of rare earth materials, in particular to a directional impurity removal method for rare earth metal and rare earth metal prepared thereof.The directional impurity removal method comprises the steps that tungsten disulfide powder is added into the rare earth metal to be subjected to directional impurity removal according to a preset proportion, and a first mixture is obtained; performing first heating on the first mixture in a vacuum environment to obtain a second mixture; performing second heating on the second mixture until the second mixture is evaporated and then condensed to obtain a third mixture; the third mixture is rare earth metal subjected to directional impurity removal. Tungsten disulfide is added into rare earth metal, a thermal decomposition reaction is carried out under vacuum and high temperature, tungsten and sulfur are released, sulfur makes contact with oxygen element impurities in the floating process to generate SO2 gas to be discharged out of a melt by utilizing the difference of forming energy and binding energy, tungsten is combined with impurities such as iron, nickel and silicon, directional regulation and control of the impurities are achieved, the volatile quality of the impurities is changed, and the mechanical property of the alloy is improved. The purification efficiency and the impurity removal range of the vacuum distillation technology are effectively improved.

The invention relates to a method for determining element impurities in Zinjiang Rigan-8 tablets, which belongs to the technical field of analysis and detection and is characterized in that the element impurities in the Zinjiang Rigan-8 tablets are detected by adopting inductively coupled plasma mass spectrometry. When the inductively coupled plasma mass spectrometry method is used for detecting, a preparation method of a test solution comprises the following steps: weighing 0.1-0.5 g of a Tiangan-8 test sample, precisely weighing, putting into a digestion tank, adding 6.0 ml of nitric acid, standing, stopping the reaction, adding 2.0 ml of hydrogen peroxide, sealing, digesting according to a procedure, cooling to 60 DEG C or below after complete digestion, taking out the digestion tank, cooling to room temperature, and filtering to obtain the test solution. Placing the digestion tank in a 50ml measuring flask, washing the digestion tank with 2% nitric acid, mixing the washing liquor in the measuring flask, dissolving the digestion solution in the digestion tank with purified water, transferring into the measuring flask, fixing the volume to the scale, and shaking uniformly to obtain a test solution. The determination method disclosed by the invention is good in accuracy and good in repeatability.

The invention discloses a method for preparing a nitrogen-free crucible coating, and belongs to the technical field of semiconductor processing. Comprising the following steps: step 1, preparing raw materials: preparing a crucible, high-purity silicon powder, high-purity quartz powder, silica sol and alcohol; 2, mixing: pouring the high-purity silicon powder, the high-purity quartz powder, the silica sol and the alcohol into a barrel, and stirring to uniformly mix; 3, crucible pretreatment, wherein a crucible is cleaned, subjected to impurity removal and dried; step 4, preparation of brush coating; 5, brush coating is started; step 6, brush coating inspection; and step 7, drying. According to the nitrogen-free crucible coating prepared through the method, a nitrogen-containing compound does not need to be used in the whole preparation process, introduction of nitrogen element impurities is avoided, preparation of the nitrogen-free coating is achieved, and the influence of nitrogen elements on the crystal quality is reduced. The coating is not easy to decompose under the conditions of low furnace pressure and high-temperature ingot casting, can well prevent silicon liquid from being contacted with a crucible, and has a good demolding effect.

The application provides a kind of determination method of small broken material surface metal impurity of polysilicon, and the method comprises the following steps: taking small broken material sample of polysilicon in a beaker, adding leaching solution, and digesting; taking the digested sample, cooling to room temperature, and transferring into a volumetric flask, then adding HNO3 for constant volume; shaking the volumetric flask, mixing the solid phase and liquid phase uniformly, and then centrifuging; after centrifugation, taking the supernatant to make a standard curve by standard addition method, the first addition amount of the standard curve should be close to the element content in the sample, and a blank is also prepared; the ICP-MS instrument is tuned to be optimal, the standard addition concentration is taken as the abscissa, the measured ion count CPS value is taken as the ordinate, the standard curve is drawn, and the sample is measured. The application avoids secondary pollution, and does not change the volume of acid leaching solution, and also does not have the problem of incomplete flushing of element impurities.

The invention provides a method for preparing a pyrrolo [2, 3-b] indole derivative, and relates to the technical field of indole compound preparation, tryptophan derivative is used as a substrate, in an unseparated electrolytic tank, in the presence of a solvent, an additive and an electrolyte, constant current is introduced into the electrolytic tank for electrolytic reaction, intramolecular oxidation cyclization is realized, and the pyrrolo [2, 3-b] indole derivative is constructed. According to the invention, electrons are used as a unique oxidant, reaction driving can be realized under the condition that no additional chemical oxidant or metal catalyst is needed, and element impurities and post-treatment difficulty are obviously reduced; on the other hand, the additive plays roles of electron transfer and stable reaction proceeding and reaction trend, so that efficient ring-merging conversion is realized on the premise of simple reaction conditions; and on the other hand, the reaction conditions are mild, and good compatibility is shown for various protecting groups and functional groups, so that the application range of the substrate is wide.

The invention discloses a high-quality synthetic diamond preparation technology, and relates to the technical field of diamond preparation, the technology comprises the following steps: selecting a molybdenum sheet with the surface plated with a nano diamond transition layer as a substrate, carrying out chemical mechanical polishing, ultrasonic cleaning and hydrogen plasma activation, and then adopting a microwave plasma chemical vapor deposition method to prepare the high-quality synthetic diamond. The volume ratio of methane to hydrogen, the reaction temperature and the microwave power are controlled, and the deposition thickness reaches 20 microns; then the film layer and the substrate are placed in a catalyst-free high-pressure system to be treated, and hot recrystallization of the internal structure of the diamond and phase change conversion of a non-diamond phase are achieved; the bulk phase purity of the diamond crystal is greater than 99.95% through the migration of light element impurities and the adsorption of carbon powder; and finally, cooling and depressurizing treatment and surface cleaning are conducted, the high-quality single crystal diamond which is complete in structure, low in impurity content and stable in crystal performance is obtained and is suitable for the high-precision fields of high-end photoelectrons, quantum sensing, semiconductors and the like, and preparation and application of the high-quality diamond are achieved.

The invention relates to the technical field of aluminum alloy materials, in particular to a high-impact-resistance aluminum alloy and a preparation method thereof.The high-impact-resistance aluminum alloy comprises, by mass, 0.03%-0.15% of silicon, 0.03%-0.15% of aluminum, 0.05%-0.15% of silicon, 0.05%-0.15% of silicon, 0.05%-0.15% of silicon, 0.05%-0.15% of silicon, 0.05 4.2%-4.4% of copper; 0.01 to 0.05 percent of chromium; 0.8 to 1.0 percent of magnesium; 0.05 to 0.08% of zinc; 0.7%-0.9% of manganese; 0.15%-0.25% of niobium; 0.01 to 0.05 percent of strontium; 0.08% to 0.12% of zirconium; 0.01 to 0.05 percent of titanium; 0.2 to 0.25 percent of rare earth elements; less than 0.12% of impurity iron; other impurity elements are less than 0.1%; and the balance of aluminum. The rare earth elements comprise cerium, scandium, yttrium and erbium. The prepared aluminum alloy has high strength and high impact resistance at the same time.

A brazing sheet, an article formed from or including all or a portion of the brazing sheet, and a method for forming an article of manufacture are provided. The brazing sheet includes a brazing layer and a core layer. The brazing layer includes a 4XXX series aluminum alloy. The core layer includes a first aluminum alloy, the first aluminum alloy including, in weight percent based on the total weight of the first aluminum alloy, 0.2 to 0.6 silicon, 1.5 to 2 manganese, 0.01 to 0.2 titanium, 0.5 to 2.5 copper, 0 to 0.5 iron, 0 to 0.5 magnesium, 0 to 0.5 zinc, 0 to 0.3 chromium, 0 to 0.25 zirconium, and optionally incidental elements, impurities, and aluminum. The first aluminum alloy satisfies formula (I): 3.1 ≦([Mg]+[Fe]+[Cr]) / [Si], where [Mg], [Fe], [Cr], and [Si] are the weight percent concentrations of manganese, iron, chromium, and silicon in the first aluminum alloy, respectively.

The invention discloses a preparation method and application of tert-butyl-2-phenyl-1H-benzimidazole-1-carboxylic ester, 2-phenylbenzimidazole and di-tert-butyl dicarbonate ester are used as raw materials, and the tert-butyl-2-phenyl-1H-benzimidazole-1-carboxylic ester is generated through a reaction under the action of a catalyst DBU; according to the invention, the reaction is a reflux reaction, the reaction time is 2-4 hours, and the molar ratio of the 2-phenylbenzimidazole to the di-tert-butyl dicarbonate ester is 1: (1.2-1.5); the prepared tert-butyl-2-phenyl-1H-benzimidazole-1-carboxylic ester is high in purity, the content of metal element impurities in the tert-butyl-2-phenyl-1H-benzimidazole-1-carboxylic ester is lower than or equal to 100 ppb, and the tert-butyl-2-phenyl-1H-benzimidazole-1-carboxylic ester can be used as a corrosion inhibitor in components of a photoresist cleaning agent and is better in corrosion inhibition effect.

A low-oxygen, small-size titanium alloy powder, its preparation method, and its applications. This invention belongs to the field of titanium alloy powder preparation. The purpose of this invention is to solve the technical problems of high cost and poor mechanical stability of existing rotating electrode powder preparation methods, which reduce powder particle size by increasing electrode rotation speed and electrode size. The method of this invention: A rotating electrode powder preparation method is used, with a radio frequency hydrogen plasma emitter as the heat source. The plasma arc is placed within a dynamic rotating magnetic field generated by two orthogonally arranged electromagnetic coils. After the consumable electrode reaches a preset rotation speed, the heat source is activated. After vacuuming, powder is prepared in an argon-hydrogen mixed atmosphere. The prepared powder is then subjected to high-temperature isothermal sintering under vacuum conditions to obtain low-oxygen, small-size titanium alloy powder. This method promotes fluid granulation and fine powder generation, effectively reduces the oxygen impurity content in the alloy powder, and results in lower cost, stronger mechanical stability, and lower impurity content.

The invention provides a silicon-coated silicon nitride coating material as well as a preparation method and application thereof, and relates to the technical field of thermal spraying surface engineering. Silicon nitride is a high-quality ceramic material with high temperature resistance and good toughness, but the silicon nitride cannot be sprayed at normal temperature and normal pressure to form a coating, so that the silicon-coated silicon nitride coating material provided by the invention is of a core-shell structure and comprises 3.0-20.0 wt.% of a silicon shell and the balance of a silicon nitride core; the particle size of the silicon-coated silicon nitride coating material is 30-50 [mu] m, the sphericity degree is 99%-100%, and the thickness of the silicon coating layer is 3-10 [mu] m. The silicon-coated silicon nitride core-shell structure coating material is constructed, the bonding strength of the coating is remarkably improved, a silicon shell serves as a bonding phase, the problems of bonding and thermal expansion mismatch between the coating and a matrix, insufficient high-temperature stability and the like are effectively solved, and the service life of the silicon-coated silicon nitride core-shell structure coating material is prolonged. Meanwhile, the wettability and the bonding strength of the composite particles and a matrix are improved due to the good ductility of silicon. And other non-silicon and non-nitrogen element impurity components are not introduced into the system, so that the high-purity silicon nitride coating is obtained.

The invention provides equipment for producing sodium zirconium cyclosilicate and a production method using the equipment. By using the equipment and the method, high-quality sodium zirconium cyclosilicate can be produced on a large scale, the obtained product has fewer element impurities such as lead, nickel and the like, and the medication safety is improved.

The invention discloses a rare earth guide and guard material containing intermittent network carbide. The rare earth guide and guard material comprises the following components in percentage by mass: basic elements: 0.80-2.30% of C and 0.65-1.35% of Cr; the key control is Cr / C mass ratio gt; 3.5); the content of RE is 0.0020 to 0.010 percent; auxiliary elements: 0.10 to 0.65 percent of Si, 0.85 to 2.50 percent of Mn, 0.06 to 0.77 percent of Mo and less than or equal to 0.03 percent of V; impurities are limited as follows: P is not more than 0.020%, S is not more than 0.025%, and [O] is not more than 15 ppm; and the balance of Fe and inevitable impurities. The invention further discloses a vacuum deep deoxidation preparation process. The invention aims to provide a rare earth guide and guard material containing intermittent network carbide and a vacuum deep deoxidation preparation process thereof, and designs a novel high-temperature-resistant and wear-resistant guide and guard material.

The present invention relates to a rack steel plate with a thickness up to 160 mm for an offshore wind power installation platform and a manufacturing method therefor. The steel plate comprises the following elemental components in percentages by mass: C: 0.30-0.40%, Si: 0.15-0.35%, Mn: 0.85-1.20%, P≤0.010%, S≤0.002%, Cr: 0.45-0.75%, Mo: 0.45-0.65%, Ni: 1.3-1.8%, Al: 0.06-0.10%, V: 0.02-0.05%, Nb: 0.01-0.04%, Ti≤0.006%, N≤0.007%, B: 0.001-0.002%, and the balance being iron and inevitable elemental impurities. The steel plate has a manufacturing thickness of less than or equal to 160 mm, a yield strength of greater than or equal to 1000 MPa, a tensile strength of greater than or equal to 1100 MPa, and an elongation of greater than or equal to 12%; and the lateral Charpy impact energy of the steel plate at -40ºC at a quarter-thickness position of the steel plate and the lateral Charpy impact energy thereof at -30ºC at a mid-thickness position of the steel plate are both greater than or equal to 46 J. The structure near the surface is tempered troostite; the structure at the quarter-thickness position of the steel plate is tempered troostite and tempered lower bainite; and the structure at the mid-thickness position of the steel plate is tempered troostite, tempered lower bainite and a small amount of tempered granular bainite. The rack steel plate has high strength, high hardness, hardness uniformity, good plasticity, high low-temperature toughness and good weldability.

The invention discloses a general detection method for 21 element impurities in an injection, and belongs to the technical field of medical analysis, 21 elements to be detected are divided into two groups for detection by adopting an inductively coupled plasma mass spectrometry and inductively coupled plasma atomic emission spectrometry combined technology: the first group of elements comprise lithium, aluminum, vanadium, cobalt, nickel, copper, arsenic, cadmium, antimony, mercury and lead, and the second group of elements comprise lithium, aluminum, vanadium, cobalt, nickel, copper, arsenic, cadmium, antimony, mercury and lead; detecting by adopting inductively coupled plasma mass spectrometry; the second group of elements comprise boron, silicon, calcium, titanium, chromium, iron, zinc, molybdenum, tin and barium, and are detected by adopting an inductively coupled plasma atomic emission spectrometry. According to the method, a grouping principle based on instrument characteristics and element properties is provided, optimal configuration of detection resources is achieved, and the limitation of a single technology is effectively avoided.

The application provides an aluminum alloy anode material and a preparation method and application thereof, and belongs to the technical field of aluminum anode materials. According to the application, the aluminum alloy anode material contains the following elements in percentage by mass: 2.0-5.0% Mg, 0.01-2.0% Ca, 0.01-1.0% Sn, 0-0.50% Bi, 0-0.50% In, 0-0.50% Ga, 0-0.50% Mn, impurities less than 0.50%, and the balance of Al; and the total mass percentage of the four elements Sn, Bi, In and Ga is not less than 0.05%. The preparation method comprises the following steps: aluminum anode melt preparation, tackifier addition, spherical foaming agent addition, constant-temperature and constant-pressure foaming and the like. The application significantly improves the porosity and specific surface area of the aluminum alloy anode material, increases the contact area of the aluminum alloy anode material with electrolyte, significantly improves the output power and energy density of the battery, and greatly improves the discharge capacity.

A sample preparation tool (10) for X-ray fluorescence analysis is a tool for preparing a sample for X-ray fluorescence analysis by pulverizing a solid pharmaceutical product (91) to be analyzed into a powder, and is provided with: a pulverizing container (11) for accommodating the solid pharmaceutical product (91); and a pulverizing member (12) that can be housed in the pulverizing container (11) together with the solid pharmaceutical product (91), the inner surfaces (131, 132) of the pulverizing container (11) and the surface (133) of the pulverizing member (12) being made of a material that has lipophobicity, is harder than the solid pharmaceutical product (91), does not contain Cd, Pb, As, Hg, Co, V, or Ni, and has a thickness of 10-30 [mu] m. Or the pharmaceutical composition does not contain impurity elements specified by the element impurity management guidance principle in pharmaceutical preparations published by the technical requirements of human medicines on international coordination affairs.

The application belongs to the field of laser selective melting (SLM) rapid forming, discloses a Bi element containing magnesium alloy powder for laser selective melting and application thereof, and the magnesium alloy powder is composed of the following components in percentage by mass: Al element: 8.5-9.0%, Zn element: 0.5-1%, Bi element: 1-2%, Mn element: 0.2-0.4%, impurities: ≤0.05%, and the rest is Mg element. Through improvement on the specific composition of the magnesium alloy powder for laser selective melting, the application introduces appropriate Bi element into the magnesium alloy, promotes alloying in cooperation with the SLM process, and the corresponding SLM magnesium alloy forming piece has better tensile strength and yield strength, and the thermal stability of the performance of the forming piece is better.

The present invention addresses the problem of providing a method for reducing elemental impurities such as aluminum in silicon oxide. This method for producing silicon oxide is provided with a water treatment step, a reduced-pressure heating step, and a desublimation step. In the water treatment step, silicon is brought into contact with water and then dried to obtain water-treated silicon. In the pressure-reduced heating step, (a) the water-treated silicon is heated under reduced pressure together with (b1) silica, (b2) a metal silicate, or (b3) a mixture of a metal oxide and silicon oxide to generate a gas. In the desublimation step, the gas is desublimated to obtain a solid.

The invention discloses a method for detecting element impurities in a dabigatran etexilate bulk drug, which comprises the following steps of: carrying out dynamic gradient microwave digestion: precisely weighing a proper amount of a dabigatran etexilate mesylate bulk drug, and sequentially carrying out HNO3 / H2O2 pre-reaction, HF / HClO4 complex breaking and H2O2 incremental oxidation; adding a gold stabilizer to inhibit palladium volatilization; and a corresponding detection result is obtained through DRC-ICP-MS detection. The method has the beneficial effects that firstly, the problem of palladium catalyst residue detection is solved, and the volatilization inhibition and recovery rate of gradient digestion and an Au stabilizer are improved; according to the invention, through DRC multi-gas mode (He / NH3) switching, the high-throughput detection is improved, the anti-interference capability is improved, the detection sensitivity is improved, the HF corrosion resistant life of the Pt cone is prolonged, and the detection cost of a single sample is saved.

The application discloses a method for detecting element impurities in polyethylene packaging materials. The method comprises the following steps: cutting the polyethylene packaging materials, precisely weighing, adding hydrochloric acid solution for reflux extraction, extracting element impurities in the polyethylene packaging materials, and obtaining a test sample solution; and using an inductively coupled plasma mass spectrometer (ICPMS) for detection, controlling the helium flow rate, and determining the test sample solution. According to the requirements of ICH Q3D on element impurities in preparations, the application traces back to the packaging materials in the previous step, studies the element impurities in the packaging materials first, determines the applicability of the packaging materials, and then determines whether the packaging materials can be used for corresponding preparation products, so that the loss of large-scale production of enterprises can be avoided.

The application discloses a kind of high-performance composite board and its preparation method, application, belong to high-performance material technical field.The high-performance composite board of the application includes top plate, bottom plate and the aluminum honeycomb core being arranged between the top plate and the bottom plate, aluminum honeycomb core includes the following mass percentage of elements:Zn:4.3%~5.5%, Mg:2.0%~2.5%, Cu:0.8%~1.2%, Zr:0.15%~0.23%, Mn:0.02%~0.06%, rare earth element:0.12%~0.3%, Ti:0.02%~0.04%, Si:0.3%~0.7%, Fe≤0.15%, impurity element≤0.01%, the balance is Al.The board is prepared by the way of combining wood material and aluminum alloy material, not only maintains the appearance and performance of wood, but also has the high strength and corrosion resistance of aluminum alloy material, the overall mechanical property is more excellent, not easy to crack, can also improve the sound insulation effect of composite board, endow product with higher value.

The invention relates to an aluminum alloy part and a preparation method thereof, an aluminum alloy additive part and a solid-phase additive manufacturing method, and relates to the technical field of material development of aluminum alloy materials and additive manufacturing. According to the main technical scheme, the aluminum alloy part is used as a raw material of the solid-phase additive manufacturing process; wherein the aluminum alloy part comprises the following chemical components in percentage by weight: 7 to 15 percent of Mg, 0 to 1.4 percent of Mn, 0 to 5 percent of reinforcing elements, 0 to 0.5 percent of impurity elements and the balance of Al; wherein the reinforcing element comprises at least one of Ti, B, Zn, Cr, Ti, Zr, Sc and Cu elements; the impurity elements comprise Fe and / or Si. The solid-phase additive manufacturing method of the aluminum alloy additive part comprises the following steps that solid-phase additive manufacturing treatment AFED or AFSD is conducted on an aluminum alloy part, and the aluminum alloy additive part is obtained. The method is used for developing the aluminum alloy part to be suitable for the solid phase additive process, so that the prepared aluminum alloy additive part has the characteristics of being high in strength and free of heat treatment.

The application discloses a method for synthesizing silicon carbide with reduced nitrogen impurity content, which comprises the following steps: loading Ti metal into a graphite crucible with a cover, then placing the graphite crucible with the cover into a silicon carbide powder synthesis crucible; uniformly mixing Si and C powder, then placing the mixed Si and C powder into the silicon carbide powder synthesis crucible and sealing the silicon carbide powder synthesis crucible; placing the powder synthesis crucible into a graphite heater, sealing the graphite heater, pumping the graphite heater to a base vacuum, filling argon, maintaining the pressure in the furnace, then performing temperature rising and temperature maintaining according to a preset temperature control program to complete the synthesis of the silicon carbide powder. The Ti metal has the effect of physically and chemically adsorbing nitrogen impurities at high temperature, and generates Ti3N, TiN and other compounds or Ti-N solid solution. Since the physical properties of titanium nitride are stable, the content of nitrogen impurities can be reduced in the process of synthesizing high-purity silicon carbide powder, and the purity of the silicon carbide powder is improved.