50 results about "Elemental impurities" patented technology

The invention discloses an aluminum-silicon based aluminum section. The aluminum section is composed of, by weight, 5.0-14.0% of silicon, 0.2-0.7% of magnesium, less than 0.03% of boron, less than 0.06% of strontium, 0.1-6.55% of strengthening elements, less than 0.25% impurity elements, and the balance aluminum. The aluminum-silicon based aluminium section has the advantages of high strength, high hardness, good wear resistance, etc. the invention also discloses a preparation technology for the aluminum-silicon based aluminum section, which comprises a first step of adding aluminum-silicon alloy to a graphite crucible and heating the alloy to form melt; a second step of adding the magnesium, the silicon and the strengthening elements; a third step of adding hexachloroethane for refinement; a forth step of adding the strontium for deterioration, casting to a cast iron die to form an ingot casting; and a fifth step of hot extruding, hot rolling for deformation, solid solution treating and aging treating in sequence after annealing the ingot casting, thereby obtaining the aluminum-silicon based aluminum section. The preparation technology is simple.

The invention particularly discloses155ksi steel grade high strength-toughness casing steel, a casing pipe and a preparation method of the casing steel and the casing pipe. The 155ksi steel grade high strength-toughness casing steel comprises the following chemical components by weight percent: 0.23-0.27% of C, 0.20-0.35% of Si, 0.45-0.60% of Mn, 0.95-1.10% of Cr, 0.75-0.85% of Mo, 0.03-0.05% of Nb, 0.07-0.12% of V, 0.015-0.045% of Al, and the balance of Fe and residual element, impurity and five-harmful elements. The high strength casing pipe prepared according to the invention is mainly used for an ultra-deep oil-gas well and a complicated geological oil and gas field; according to the performance requirement of the related casing pipe, the reasonable microalloying component is selected, the stable performance of the high strength-toughness casing steel is guaranteed, the toughness is well matched and the requirements of the ultra-deep oil-gas well and the complicated geological oil and gas field at home and abroad are met.

The invention discloses a preparation method of high-purity quartz sand, and belongs to the technical field of mineral refining, and the preparation method comprises the following steps: crushing: crushing quartz sand crude ore into quartz sand particles; ultrasonic scrubbing: performing ultrasonic scrubbing on quartz sand particles; magnetic separation: selecting high gradient magnetic separatorfor three times magnetic separation of quartz sand fine sand; acid leaching: performing microwave heating quartz sand after flotation, then stirring and soaking with a 10% oxalic acid solution; flotation: mixing the quartz sand after acid leaching with water and putting into a flotation machine, adjusting the pH value in three steps, and using different collectors for flotation at the same time; drying and bagging: drying in a vacuum drying oven, and vacuum bagging after cooling. The preparation process is simple, reasonable and efficient in design; iron impurities in the quartz sand can be removed by ultrasonic scrubbing, multiple magnetic separation, microwave heating and acid leaching and flotation; the iron impurities in the prepared high-purity quartz sand are reduced to below 0.35 mg/kg; and the product has stable quality and high efficiency, and is suitable for large-scale popularization and application.

The invention provides a method and a device for circulating hydrogen repurification and relates to the field of polysilicon production. According to the method and device, the circulating hydrogen is subjected to adsorption and impurity removal to reduce the content impurities of boron and phosphorus in hydrogen from 10 ppba to 0.1 ppba. The specific steps are as below: first introducing circulating hydrogen into a hydrogen cooler for cooling; cooling the hydrogen to 0 to 30 DEG C; introducing hydrogen into a first-stage adsorption reaction column to adsorb and remove impurities mainly containing boron; introducing the circulating hydrogen after the first-stage adsorption into a hydrogen cryogenic device, cooling the hydrogen to -88 to -68 DEG C; and introducing the hydrogen to a second-stage adsorption reaction column to adsorb and remove impurities mainly containing phosphorus element. According to the invention, the circulating hydrogen adsorption reaction is employed for removal of harmful impurities of boron and phosphorus elements, so as to dramatically reduce the content of impurities including boron and phosphorus in hydrogen, and upgrade the quality of circulating hydrogen. The invention makes it possible to improve Siemens method for stable production of electronic grade polysilicon, and breaks the blockade of foreign technology. The process is simple, easy to operate, and has obvious effect of impurity removal.

The invention relates to an analysis method for determining hydromorphone hydrochloride bulk drug element impurities. The method comprises the steps of system applicability, standard curve preparation, internal standard solution preparation, sample preparation and standard recovery sample preparation, and standard curve drawing, detection limit, sample, and standard recovery rate detection. According to the method, the simultaneous determination of seven elements is split into simultaneous determination of six metal elements, namely arsenic, cadmium, lead, cobalt, nickel and vanadium and independent determination of mercury (Hg); the acid removing temperature is reduced from 150 DEG C to 130 DEG C, the problem that the recovery rate of the mercury element does not reach the standard is solved, the recovery rate can be increased to about 90%; and interference of the mercury (Hg) element on other elements due to the strong memory effect can be reduced through independent measurement. Germanium, indium, bismuth and scandium internal standards are selected, so that the influence of signal drift and matrix effect on measurement can be effectively reduced.

The invention discloses a high-strength high-heat-resistance low-scandium sliver added Al-Cu-Mg-series alloy and a thermal treatment process thereof. Cu and Mg in the alloy are main alloyed elements;Sc, Zr, Si, Ag, Ti, Mn and V are micro-alloyed elements; mass percentage content of Fe in impurities is properly broadened, and the rest of impurities including Ni and Zr need to strictly control; forthe alloy with Mg content greater than 0.3%, thermal deformation is performed before homogenization to avoid hot cracking tendency, and then homogenization is performed again. Ageing treatment comprises combination of natural ageing and artificial ageing; a micro structure and strength are improved by relevance of cluster-precipitation behaviors; and while usage amount of dear scandium and sliverelements is controlled to be smaller than 0.2%, room-temperature tensile strength of the target alloy can be higher than 470 MPa, and tensile strength at a temperature of 300 DEG C and a temperatureof 400 DEG C is separately greater than 160 MPa and 100 MPa.

The invention discloses an Al-Cu alloy wire for additive manufacturing. The Al-Cu alloy wire for additive manufacturing comprises the following chemical components, by mass percentage, 5.5-6.5% of Cu,less than or equal to 0.15% of Fe, less than or equal to 0.06% of Si, 0.26-0.42% of Mn, less than or equal to 0.02% of Mg, less than or equal to 0.10% of Zn, 0.1-0.2% of Ti, 0.10-0.25% of Zr, 0.05-0.15% of V, 0.05-0.25% of Cd, Sn or In, 0.10-0.25% of Sc, less than or equal to 0.0003% of Be, less than or equal to 0.05% of other single elements, less than or equal to 0.15% of total impurities and the balance Al. The invention further provides a preparation method of an alloy of the alloy wire and application of the alloy wire. The problems that a fuse wire additive forming component taking a commercial Al-Cu alloy welding wire as a raw material is prone to micro-crack defects and low in mechanical property are solved.

The invention discloses a method for removing element impurities and pigments in a sugammadex sodium refined product. The method comprises steps: dissolving the refined sugammadex sodium product intoan aqueous solution; dropwise adding a certain amount of a poor solvent to separate out a small part of sugammadex sodium and a large part of element impurities and pigments in the solution, separating the precipitate, collecting sugammadex sodium contained in an upper mother liquor, and obtaining a product with the large part of element impurities removed through a direct concentration or solventcrystallization method. The obtained product is light in color, the content of element impurities is remarkably reduced, the requirement of ICH for the limit of the element impurities is met, and themethod is easy, convenient and safe to operate, good in economical efficiency and suitable for industrial production.

The invention discloses a method for separating iron element impurities from secondary aluminum melt through pulse current, and belongs to the technical field of secondary aluminum melt purification.The method comprises the following steps that the secondary aluminum alloy melt with the iron element content exceeding the standard is placed in a crucible, two electrodes and a pulse power supply are connected and inserted into the aluminum melt in parallel, pulse current is continuously applied until corresponding time, and corresponding pulse parameters are selected according to the volume andthe temperature of the melt, wherein the pulse current treatment parameter range comprises the parameters that the frequency is 20 - 50kHz, the voltage is 1 - 100V, the current density is 0.1 - 700A/cm<2>, and the action time is 1 - 10h. According to the method, an Al element and a Fe element in the melt are subjected to electromigration in different directions under the action of the pulse current, so that the Al element and the Fe element are enriched at the positive electrode and the negative electrode respectively, and the purpose of purifying the aluminum melt is achieved; according tothe method for separating the iron element impurities from the secondary aluminum melt through the pulse current, the aluminum melt can be subjected to pulse current treatment under the condition thatno neutralizing element is added to pollute the melt, the iron impurity elements in the aluminum melt are separated, and the melt is purified; and the method is easy to operate, efficient and free ofpollution, the iron removal efficiency is greatly improved, and the requirement of current industrial green development planning is met.

The invention relates to a low-heat-conduction and high-toughness aluminum-manganese-cobalt-series die-cast aluminum alloy and a processing technology thereof, and belongs to the technical field of alloys. The components of the cast aluminum alloy comprise Al, Mn, Co, Mg, Cr, Ni, Si, trace elements and impurity elements, the low-heat-conductivity and high-toughness aluminum-manganese-cobalt seriesdie-cast aluminum alloy not only has the advantages of lower thermal conductivity, but also has good strength and meets market requirements. Meanwhile, raw materials of the die-cast aluminum alloy are mixed in steps and batches, sufficient reaction can be carried out between the raw materials, a required compound is formed, the production stability and performance of the die-cast aluminum alloy are increased, the raw materials of the die-cast aluminum alloy are made of intermediate alloys and metal elemental ingots, the raw materials are easy to obtain, and the production cost is reduced.

The invention encompasses a method and apparatus for producing high-purity metals (such as, for example, high-purity cobalt), and also encompasses the high-purity metals so produced. The method can comprise a combination of electrolysis and ion exchange followed by melting to produce cobalt of a desired purity. The method can result in the production of high-purity cobalt comprising total metallic impurities of less than 50 ppm. Individual elemental impurities of the produced cobalt can be follows: Na and K less than 0.5 ppm each, Fe less than 10 ppm, Ni less than 5 ppm, Cr less than 1 ppm, Ti less than 3 ppm and O less than 450 ppm.

The invention relates to a method for determining the content of zirconium and impurity elements in uranium-zirconium alloy. The method comprises the following steps: step 1, dissolving a sample; (1)dissolving a sample for measuring zirconium content; (2) dissolving a sample for determining the content of impurity elements; 2, extracting and separating a uranium matrix; (1) extracting and separating a uranium matrix from a zirconium element content sample; (2) extracting and separating a uranium matrix from a sample for determining the content of impurity elements; step 3, sample determination; (1) determining zirconium; and (2) determination of impurity elements. The detection method for determining the contents of the components and the impurity elements in the uranium-zirconium alloy through the plasma emission spectrometry is successfully established, the contents of the to-be-determined element impurities can be accurately determined by utilizing the experimental conditions listed in the content of the invention, accurate detection data is reported, and the method is effectively matched with special production.

The invention discloses a high-strength fatigue-resistant aluminum alloy door frame and a preparation technique thereof. The high-strength fatigue-resistant aluminum alloy door frame includes the following elements of, by weight, 6.18-12.87% of silicon powder, 1.28-3.56% of magnesium, 0.89-1.75% of iron powder, 0.56-0.95% of nanometer carbon powder, 0.12-0.31% of boron, 0.03-0.16% of titanium, 0.26-0.48% of chromium, 0.16-0.54% of nitrogen, 0.005-0.12% of minor additive elements, impurities controlled to be smaller than or equal to 0.01% and the balance Al. According to the high-strength fatigue-resistant aluminum alloy door frame and the preparation technique thereof, by optimizing the contents of all the components, mutual compensation is conducted, and the problems that in the using process of an existing aluminum alloy, strength is low, and deformation is likely to occur are solved; and the aluminum alloy door frame made of the materials has great impact resistance and fatigue resistance, the service life of the aluminum alloy door frame is greatly prolonged, and accidents are reduced.

The invention provides a method for determining element impurities in OTC soft capsules by using an inductively coupled plasma mass spectrometry technology. According to the method, an ICP-MS detection method with high sensitivity and accuracy can be established according to the maximum daily dose of different products and the daily permissible exposure (PDE) of elements; according to the present invention, the ICP-MS can be used to determine Cd, Pb, As, Hg, Co, V, Ni, Ag, Tl, Au, Ir, Mo, Os, Pd, Pt, Rh, Ru, Sb, Sn, Ba, Cr, Cu, Li, Se and other element impurities in the OTC capsule; and the method can meet the determination requirements of a variety of heavy metal elements in the OTC capsule, and has high accuracy, precision and repeatability.

The invention relates to a steel wire suitable for making a spring or medical wire products which remarkably improve the performance of conventional stainless steel wire. The steel comprises (in wt. %): C: 0.02 to 0.15, Si: 0.1 to 0.9, Mn: 0.8 to 1.6, Cr 16 to 20, Ni: 7.5 to 10.5, Mo: ≤3, Al: 0.5 to 2.5, Ti: ≤0.15, N: ≤0.05, optional elements, and impurities, balance Fe, wherein the total amount of Cr and Ni is 25 to 27 wt. %, and wherein the steel has a microstructure including, in volume % (vol. %), martensite: 40 to 90, austenite: 10 to 60, and delta ferrite: ≤5.

Carbon materials having carbon aggregates including carbon nanoparticles and no seed particles, are disclosed. In various embodiments, the nanoparticles include graphene, optionally with multi-walled spherical fullerenes and/or another carbon allotrope. In various embodiments, the nanoparticles and aggregates have different combinations of: a Raman spectrum with a 2D-mode peak and a G-mode peak, and a 2D/G intensity ratio greater than 0.5, a low concentration of elemental impurities, a high Brunauer-Emmett and Teller (BET) surface area, a large particle size, and/or a high electrical conductivity. Methods are provided to produce the carbon materials.

The invention provides a method for detecting element impurities in tigecycline for injection. The detection method comprises the following steps: preparing a linear standard solution of each elementimpurity; preparing an internal standard solution; preparing a sample to be detected, redissolving tigecycline for injection with purified water to form an aqueous solution, and mixing the aqueous solution with a diluent to form a to-be-detected sample, wherein the diluent is a mixed solution of HNO3, purified water and a gold standard solution in a volume ratio of (1-3): (97-99): 0.02, and the concentration of the gold standard solution is 1000 [mu] g/mL; drawing a standard curve; sample detection: mixing the to-be-detected sample and the internal standard solution, introducing the sample anddetecting by using an inductively coupled plasma mass spectrometer to obtain the response values of each element; and converting to obtain the impurities of each element in tigecycline for injectionaccording to the response value obtained by sample detection and the standard curve. The diluent ensures the dissolution performance of the element impurities so that the content of the impurities ofeach element can be detected by one method.

Chemical grade silicon metalloid having improved performance in the direct process for making organohalosilanes is selected by (A) measuring the temperature of each batch of silicon metalloid during both the refing and the casting of the silicon metalloid; (B) measuring the elemental impurity levels in each batch of the silicon metalloid after refining of the silicon metalloid; (C) predicting the properties of the slag phase produced during refining of the silicon metalloid, based on equilibrium calculations, using the elemental impurity levels and the measured temperatures of each batch of silicon metalloid; and (D) selecting a chemical grade silicon metalloid for use in the direct process for making organohalsilanes, based upon the predicted slag properties; such that the slag density, the viscosity, and the melting point of the slag, are within acceptable and predetermined ranges for each individual batch.

The invention relates to a heat-resistant magnesium alloy as well as a preparation method and application thereof. The heat-resistant magnesium alloy is prepared from the following components of, in percentage by mass, 8.0 wt%-12.0 wt% of Gd, 2.0 wt%-4.5 wt% of doping elements, 1.5 wt%-5.0 wt% of Sm, 0.5 wt%-2.0 wt% of Ag, 0.2 wt%-0.6 wt% of Zr, 0 wt%-0.03 wt% of impurity elements and the balance of Mg, wherein the doping element is selected from at least one of Y and Nd. The heat-resistant magnesium alloy contains the components in a specific proportion, the mechanical property of the magnesium alloy is enhanced in a compounded mode, the effect of synergistically separating out pinning dislocation in the grain boundary and the grain can be achieved through the optimized heat treatment technology, and therefore the heat resistance, the ductility and the creep resistance of the magnesium alloy are improved, and the excellent hardness can be kept at the high temperature.

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a semiconductor substrate structure comprising an N-type buried layer and a manufacturing method of the semiconductor substrate structure. The base structure comprises a P-type substrate layer, wherein N-type element impurities are doped into a buried layer region in the P-type substrate layer to form an N-type buried layer; a P-type epitaxial layer which is deposited on the P-type substrate layer, wherein the concentration of P-type impurities in the P-type epitaxial layer is a second concentration; a P-type epitaxial barrier layer is formed between the P-type substrate layer and the P-type epitaxial layer, wherein the P-type epitaxial barrier layer is used for preventing N-type element impurities from evaporating into the P-type substrate layer from the N-type buried layer; the P-type impurity concentration of the P-type epitaxial barrier layer is a first concentration; the first concentration of the P-type impurities in the P-type epitaxial barrier layer is greater than the second concentration of the P-type impurities in the P-type epitaxial barrier layer. The methodis used for manufacturing the substrate structure. According to the invention, the problem that the P-type epitaxial layer is neutralized and even inverted when the bipolar NPN transistor is manufactured in the prior art can be solved.