Method for plating boron nitride film to quartz crucible for semiconductor crystal growth
A quartz crucible and crystal growth technology, which is applied to the field of boron nitride film plating on a quartz crucible for semiconductor crystal growth, can solve the problems of different particle sizes, uneven distribution, affecting the crystal growth effect, etc., and achieves safe preparation process and simple raw materials. , the effect of easy availability of raw materials
Active Publication Date: 2018-05-22
广东先导微电子科技有限公司
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Problems solved by technology
However, this method is not suitable for coating boron nitride film on the surface of quartz crucible with poor wettability, smooth surface and small specific surface area, which may easily cause B 2 o 3 Uneven distribution, especially after the organic alcohol solvent volatilizes, the deposited B 2 o 3 The particle size is different and the distribution is uneven, which affects the crystal growth effect
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Embodiment 1
[0034] Boric acid and urea are added to the solvent formed by methanol and deionized water in a mass ratio of 1:1 to obtain boric acid urea solution, wherein the volume ratio of methanol to deionized water is 1:1, and the concentration of boric acid is 41.6g / L, the concentration of urea is 40.6g / l. Then take 60mL of boric acid urea solution, add 3g of acrylamide monomer (AM) and 0.12g of N,N-methylenebisacrylamide (MBAM) into it, stir at room temperature until it is completely dissolved, then add 1ml of initiator Ammonium sulfate (APS) aqueous solution, wherein the concentration of APS is 12g / L, the final temperature of the water bath (model: DF-101S) is set to 90°C, and the heating time is set to 70min. After the temperature rise is completed, keep warm for 1 hour to obtain a sol whose dispersed phase is boric acid and urea, and whose dispersion medium is cross-linked polyacrylamide.
[0035] Use 901 glass cleaner, deionized water, and absolute ethanol to clean in turn. f...
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Abstract
The invention provides a method for plating a boron nitride film to a quartz crucible for semiconductor crystal growth. According to the method, the internal surface of the quartz crucible is plated with the boron nitride film by adopting a sol method, the boron nitride film can be produced at relatively low temperatures and can be uniformly and densely attached to the smooth internal surface of the quartz crucible, and Si in quartz can be prevented from polluting crystals when the boron nitride film plated quartz crucible is applied to the semiconductor crystal growth. In addition, the raw materials used in the method are simple, readily available, non-toxic and harmless, and the preparation process is relatively safe.
Description
technical field [0001] The present application relates to the field of semiconductor materials, in particular to a method for coating a boron nitride film on a quartz crucible for semiconductor crystal growth. Background technique [0002] Boron nitride (BN) is a ceramic compound with heat resistance, corrosion resistance and excellent thermal conductivity. According to its structure, it can be divided into amorphous boron nitride (α-BN), hexagonal boron nitride (h-BN), Cubic boron nitride (c-BN) and wurtzite structure boron nitride (w-BN). Based on structural stability, preparation conditions, performance and many other factors, h-BN is the most widely used boron nitride, which can be used to manufacture various boron nitride molds. The main structure of the boron nitride crucible (PBN, pyrolytic boron nitride) currently used for growing compound semiconductor crystals is h-BN, and its preparation method is to pass nitrogen source gas and boron source gas at about 1700 ° C...
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IPC IPC(8): C04B41/87
CPCC04B41/009C04B41/5064C04B41/87C04B35/66C04B35/14C04B41/4537C04B41/4554C04B41/4552C04B41/4558
Inventor 白平平朱刘张强黄成建陈伟杰危严黄宇彬
Owner 广东先导微电子科技有限公司