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Polishing liquid capable of removing silicon dioxide particles

A technology of silicon dioxide and polishing fluid, applied in the field of polishing, can solve the problems of difficult removal, reduction of effective use area of ​​substrate, failure of substrate cleaning, etc., and achieve the effect of not reducing the thickness

Inactive Publication Date: 2018-06-01
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the characteristics of the silicon dioxide material, it is difficult to completely remove it even with RCA or ultrasonic cleaning. After cleaning, there are still a large number of silicon dioxide particles gathered on the surface of the substrate, thereby reducing the effective use area of ​​the substrate. cause substrate cleaning failure

Method used

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  • Polishing liquid capable of removing silicon dioxide particles
  • Polishing liquid capable of removing silicon dioxide particles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The volume ratio of component one in the polishing liquid is 10%; the volume ratio of component two is 90%.

[0022] The volume ratios of isopropanol, dipropylene glycol methyl ether, propylene glycol methyl ether, ethanol, nonionic surfactant and pH regulator in component one are 2%, 5%, 5%, 20%, 63% and 5% respectively . After mixing, the pH of component one was 13.5.

[0023] Use the P810 polishing machine, the speed of the polishing disc is: the upper disc is 15-35rmp; the lower disc is 15-35rmp; the polishing cloth is a soft black polyurethane damping polishing cloth; the polishing time: 30-150 seconds. After the polishing is completed, it is transferred to the cleaning process and processed normally.

[0024] After cleaning, Candela and AFM test results are as follows figure 1 Shown: the effective area of ​​the substrate is 99.19%, and Ra is 0.0877nm.

Embodiment 2

[0026] The volume ratio of component one in the polishing liquid is 20%; component two is 80%.

[0027] The volume ratios of isopropanol, dipropylene glycol methyl ether, propylene glycol methyl ether, ethanol, nonionic surfactant and pH regulator in component one are 5%, 8%, 4%, 15%, 59% and 3% respectively . After mixing, the pH of ingredient one was 14.

[0028] Use the P810 polishing machine, the speed of the polishing disc is: the upper disc is 15-35rmp; the lower disc is 15-35rmp; the polishing cloth is a soft black polyurethane damping polishing cloth; the polishing time: 30-150 seconds. After the polishing is completed, it is transferred to the cleaning process and processed normally.

[0029] After cleaning, Candela and AFM test results are as follows figure 2 Shown: the effective area of ​​the substrate is 99.54%, and Ra is 0.0709nm.

Embodiment 3

[0031] The volume ratio of component one in the polishing liquid is 20%; component two is 80%.

[0032] The volume ratios of isopropanol, dipropylene glycol methyl ether, propylene glycol methyl ether, ethanol, nonionic surfactant and pH regulator in component one are 3%, 7%, 7%, 18%, 61% and 4% respectively . After mixing, the pH of component one was 13.6.

[0033] Use the P810 polishing machine, the speed of the polishing disc is: the upper disc is 15-35rmp; the lower disc is 15-35rmp; the polishing cloth is a soft black polyurethane damping polishing cloth; the polishing time: 30-150 seconds. After the polishing is completed, it is transferred to the cleaning process and processed normally.

[0034] After cleaning, Candela and AFM test results show that the effective area of ​​the substrate is 99.28%, and Ra is 0.0651nm.

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Abstract

The invention discloses a polishing liquid capable of removing silicon dioxide particles. With adoption of the polishing liquid, particles on the surface of a silicon carbide substrate can be removedby cleaning. The polishing liquid is prepared from two components, wherein the first component is a mixed solution of isopropanol, dipropylene glycol monomethyl ether, 1-methoxy-2-propanol, ethanol, anon-ionic surfactant and a pH regulator; the second component is deionized water. The polishing liquid neither reduces thickness of the silicon carbide substrate, nor changes surface roughness of thesubstrate, and no scratch is produced. With adoption of the polishing liquid, not only can the silicon dioxide particles on the surface of the substrate be removed, but also other stubborn remainingparticles can be removed. Detection by an atomic force microscope proves that the roughness of the surface of the processed substrate can be stably lower than 0.1 nm; and detection by an optical surface analyzer prove that the effective area of the substrate is 99% or higher.

Description

technical field [0001] The invention relates to the field of polishing of a silicon carbide substrate after chemical mechanical polishing and before substrate cleaning, in particular to a polishing liquid for removing silicon dioxide particles. Background technique [0002] SiC substrate is a very important third-generation semiconductor material. Due to the high hardness of SiC crystal, in the later processing process, in order to achieve a higher surface level, silicon dioxide is often used as a fine polishing liquid, and then RCA cleaning is performed. and HF cleaning. [0003] The cleanliness of the surface of the semiconductor substrate is very important to obtain high-yield epitaxial products. Since silicon dioxide is used as the polishing liquid for fine polishing, the surface of the substrate is mainly silicon dioxide particles, as well as a small amount of other metal particles and organic particles. Component residues. [0004] Due to the characteristics of the s...

Claims

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Application Information

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IPC IPC(8): C09G1/18
CPCC09G1/18
Inventor 杨三贵刘治州康徐芳
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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