Semiconductor structures and methods of forming them

Abstract

The invention relates to a semiconductor structure and a formation method thereof. The formation method includes the following steps that: a substrate and a plurality of fin portions on the substrateare provided, wherein the substrate includes a first region and a second region, wherein the first region and the second region form two different types of transistors; gate structures which stretch cross the fin portions and cover the partial sidewalls and partial top surfaces of the fin portions are formed; a first stress layer is formed in the fin portion at two sides of the gate structure in the first region; a protective layer is formed; ion implantation is performed on the first stress layer, so that the source / drain doped region of the first transistor is formed; a second stress layer is formed in the fin portion at two sides of the gate structure of the second region; a second protective layer is formed; and ion implantation is performed on the second stress layer, so that the source / drain doped region of the second transistor can be formed. With the semiconductor structure and the formation method thereof of the present invention adopted, excessively high ion energy generatedwhen ion implantation is performed on the first stress layer can be avoided, so that a condition that a semiconductor material is damaged by excessively high energy can be avoided, and the performanceof the semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase in the density and integration of semiconductor devices, the gate size of planar transistors is also getting smaller and smaller. The ability of traditional planar transistors to control channel currents has become Weak, short channel effect occurs, leakage current increases, and ultimately affects the electrical performance of semiconductor devices. [0003] In order to further reduce the size of MOSFET devices, people have developed multi-side gate field effect transistor structures to improve the controllabil...

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Problems solved by technology

[0004] However, the performance of fin field effect transistors formed in the prior art needs to be further improved

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