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Machine debugging method and machine

A debugging method and machine technology, applied in the processing of photosensitive materials, etc., can solve the problems of low utilization rate of the machine, achieve the effects of reducing the probability of free electron damage to products, improving utilization rate, and expanding the scope of application

Active Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the regular maintenance of the machine will cause the problem of low utilization of the machine

Method used

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  • Machine debugging method and machine
  • Machine debugging method and machine

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Embodiment Construction

[0037] It can be known from the background art that regular maintenance of the machine will cause the problem of low utilization of the machine. Now combined with an ashing machine debugging method to analyze the reasons for the low utilization rate of the machine:

[0038] In the ashing machine, a metal grid is arranged at the connection between the pipeline for introducing the process gas and the process cavity. The metal grid is used to homogenize the incoming process gas, and also to filter electric charges in the process gas. When the ashing machine is regularly maintained, the metal grid will be replaced to improve the ashing quality of the ashing machine.

[0039] Due to the existence of a large number of free electrons that can move inside the metal grid, after regular maintenance and replacement, the passivation layer on the surface of the new metal grid is less dense and cannot achieve effective isolation. Therefore, during the process, the free electrons inside th...

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Abstract

A method for debugging a machine and the machine, the debugging method comprising: providing a machine, the process cavity wall of the machine has a metal grid; using an oxidizing gas containing N to passivate the metal grid processing to form a passivation layer on the surface of the metal grid. Since the oxidizing gas is an oxidizing gas containing N, the oxidation rate of the oxidizing gas is relatively high, which can effectively improve the efficiency of forming the passivation layer and shorten the debugging time, thereby helping to improve the utilization rate of the machine In addition, because the oxidizing gas contains N, the formed passivation layer is an N-containing passivation layer, so the passivation layer has higher density and stronger barrier ability, which can effectively improve the passivation layer formed. The blocking ability prevents the free electrons inside the metal grid from being excited, which is beneficial to reduce the probability of free electrons damaging the product; it can also effectively expand the applicable range of the machine and improve the utilization rate of the machine.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a debugging method for a machine and a machine. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, people's requirements for the integration and performance of integrated circuits are becoming higher and higher. In order to improve the integration level and reduce the cost, the critical dimensions of components are becoming smaller, and the circuit density inside the integrated circuit is increasing. [0003] In the process of manufacturing integrated circuits, photolithography technology is usually used to realize the manufacture of semiconductor devices. Specifically, the pattern on the mask is transferred to the photoresist layer on the semiconductor material through processes such as projection and development to form a patterned photoresist layer; then the photoresist layer is made by etching, deposition a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/36
CPCG03F7/36
Inventor 张校平叶星代大全
Owner SEMICON MFG INT (SHANGHAI) CORP