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A silicon carbide Schottky diode structure and preparation method with improved surge capability

A Schottky diode, surge capability technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of inability to resist surge, high PN junction conduction voltage, device burnout, etc.

Active Publication Date: 2020-07-21
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the forward voltage increases, the main junction part is turned on first, and the on-current of the device increases rapidly due to the participation of minority carriers in conduction. Therefore, most of the surge current of the device is concentrated in the main junction part, and at the same time, the main junction part is only partially metallized , too concentrated surge current will cause the device to burn out
Due to the small width of the P-type region inside the active region, the conduction voltage of the PN junction is too high, so it cannot play the role of anti-surge

Method used

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  • A silicon carbide Schottky diode structure and preparation method with improved surge capability
  • A silicon carbide Schottky diode structure and preparation method with improved surge capability
  • A silicon carbide Schottky diode structure and preparation method with improved surge capability

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Embodiment 1

[0049] In order to prevent the surge current from concentrating on the main junction, the surge capability of the device will be reduced, and at the same time, the resistance of the main junction and its surrounding areas to the current will be improved, and the avalanche resistance of the main junction area will be prevented from being reduced due to the excessive concentration of avalanche current, so as to improve the anti-avalanche ability of the device. , the invention discloses a silicon carbide Schottky diode structure, such as Figure 12 As shown, it includes a silicon carbide substrate 1 of the first conductivity type, a drift layer 2 located on the silicon carbide substrate, an anode electrode 13 and a cathode electrode 14, and the surface of the drift layer has a second conductivity type main junction 11; in the main junction One side of 11 is provided with a second conductivity type narrow active region 5, a second conductivity type shallowly doped region 6, a secon...

Embodiment 2

[0070] Although the silicon carbide Schottky diode structure in Embodiment 1 can improve the surge and avalanche capability of the device, it is still relatively easy to cause the concentration of avalanche current in the terminal region at the edge of the anode 13 . This embodiment further improves it, so that the avalanche current moves to the inside of the active region.

[0071] The structure of the silicon carbide Schottky diode disclosed in this embodiment is as follows: Figure 17 As shown, the surface of the main junction 11 is trenched and etched, and then the anode 20 and the cathode 21 are fabricated. The anode electrode 20 also adopts a trench structure on the surface of the main junction 11, so that in the avalanche state, the avalanche current is not easy to concentrate on the edge of the anode, but moves to the inside of the active region, so that the active region has a uniform avalanche.

[0072] Such as Figure 16 The structure of the opening groove 23 on t...

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Abstract

The invention discloses a silicon carbide Schottky diode structure for improving the surge capability and a preparation method. The silicon carbide Schottky diode structure comprises a first conductive silicon carbide substrate, and a drift layer, an anode electrode and a cathode electrode which are positioned on the silicon carbide substrate, wherein a second conductive main junction is arrangedon the drift layer; a second conductive narrow active region, a second conductive shallow doped region, a second conductive narrow-deep doped region, a second conductive wide-deep doped region and second conductive active injection regions are arranged on one side of the main junction; a second conductive terminal injection region is arranged on the other side of the main junction; the second conductive narrow active region, the widths of the second conductive shallow doped region, the second conductive narrow-deep doped region and the second conductive wide-deep doped region increase sequentially. The silicon carbide Schottky diode structure can avoid surge current from being concentrated on the main junction to cause reduction in the surge capability of a device and improves the anti-surging capability of the device.

Description

technical field [0001] The invention belongs to the field of semiconductors and power semiconductors, and in particular relates to a structure and a preparation method of a silicon carbide Schottky diode with improved surge capability. Background technique [0002] Compared with other semiconductor materials such as silicon, silicon carbide has a wider band gap, higher critical breakdown electric field, higher saturation drift velocity and thermal conductivity. The characteristics of these superior materials make SiC devices have extremely broad application prospects in the fields of high frequency, high temperature resistance and radiation resistance. Silicon carbide Schottky diodes have high breakdown voltage, high current density and high operating frequency, and have broad development prospects. One of the main bottlenecks currently faced by SiC Schottky diodes is how to improve the surge and avalanche capabilities of the device. [0003] In order to achieve higher dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/0615H01L29/6606H01L29/872
Inventor 杨同同黄润华柏松
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD