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Method of manufacturing magnetic tunnel junction

A technology of magnetic tunnel junction and ion beam etching, which is applied in the field of manufacturing ultra-small magnetic random memory structure unit and integrated circuit manufacturing, can solve the problems of unfavorable MRAM yield improvement, affecting the magnetic and electrical properties of MRAM devices, etc., and achieve electrical The effect of performance improvement, product yield improvement, and reduction of cross-sectional area

Active Publication Date: 2018-07-03
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology

The specific scheme can be realized by reactive ion etching (RIE, Reactive Ion Etching) or ion beam etching (IBE, Ion Beam Etching), physical damage caused by etching, chemical damage, and damage due to etching by-products The short circuit between the reference layer and the memory layer caused by redeposition is an inevitable problem, which will affect the magnetic and electrical properties of MRAM devices, which is not conducive to the improvement of MRAM yield

Method used

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  • Method of manufacturing magnetic tunnel junction
  • Method of manufacturing magnetic tunnel junction
  • Method of manufacturing magnetic tunnel junction

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Embodiment Construction

[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0037] A method of manufacturing ultra-small magnetic random access memory structural units through multiple oxidation and ion beam etching processes of the present invention includes but is not limited to the preparation of magnetic random access memory (MRAM), nor is it limited to any process sequence or flow, as long as the preparation can The product or device is the same or similar to that prepared by the following preferred process sequence or flow. like figure 1 As shown, the method includes the...

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Abstract

The invention provides a method of manufacturing a magnetic tunnel junction. A multiple oxidation and ion beam etching process is adopted, formation of a short circuit passage between a memory layer and a reference layer of a magnetic random access memory (MRAM) is completely eliminated, enhancement of the magnetic properties, the electrical properties and the product yield of the MRAM loop is facilitated, and the method can be used for manufacturing a structural unit of a super small magnetic random access memory.

Description

technical field [0001] The invention relates to integrated circuit manufacturing technology, in particular to a method for manufacturing an ultra-small magnetic random access memory structure unit, and belongs to the field of magnetic random access memory (MRAM, Magnetic Radom Access Memory) manufacturing technology. Background technique [0002] In recent years, MRAM using Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remains unchanged. [0003] In order to record information in this magnetoresisti...

Claims

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Application Information

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IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 张云森肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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