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Semiconductor device

A semiconductor and component technology, applied in the field of semiconductor components, can solve the problem of sacrificing on-state resistance, and achieve the effects of high breakdown voltage, increased breakdown voltage, and low on-state resistance

Active Publication Date: 2018-07-06
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, designers often sacrifice on-state resistance to meet high breakdown voltage specifications, and vice versa

Method used

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  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0032] The present invention will be described more fully with reference to the drawings of the present embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings may be exaggerated for clarity. The same or similar symbols represent the same or similar elements, and the following paragraphs will not repeat them one by one.

[0033] In the following embodiments, the first conductivity type is different from the second conductivity type. In one embodiment, the first conductivity type is N type, and the second conductivity type is P type. In another embodiment, the first conductivity type is P-type, and the second conductivity type is N-type. The P-type dopant is, for example, boron; the N-type dopant, for example, is phosphorus or arsenic. In this embodiment, the first conductivity type is P-type and the second conductivity type is N-type...

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Abstract

The invention provides a semiconductor device including a substrate of a first conductivity type, a metal-oxide-semiconductor-field-effect transistor (MOSFET), junction gate field-effect transistors (JFETs), an isolation structure, and a buried layer of a second conductivity type is provided. The MOSFET is located on the substrate. The JFET is located on the substrate. The isolation structure is located between the MOSFET and the JFET. The buried layer is located between the MOSFET and the substrate. The buried layer extends from below the MOSFET to below the isolation structure and below theJFET.

Description

technical field [0001] The present invention relates to an integrated circuit, and more particularly to a semiconductor device. Background technique [0002] In recent years, with the rising awareness of environmental protection, high voltage devices with low power consumption and high-efficiency energy conversion have attracted more and more attention. Generally speaking, high-voltage components are mainly used in power switch components, such as switching mode power supply (SMPS), lighting, motor control, or plasma display drivers, and other fields. [0003] A diffused metal-oxide semiconductor (DMOS) element is a typical high-voltage element. In general, diffused metal oxide semiconductor devices can be divided into laterally diffused metal oxide semiconductor (LDMOS) devices and vertical diffused metal-oxide semiconductor (VDMOS) devices. . Compared with LDMOS devices, VDMOS devices have a smaller area, which is conducive to the technological trend of miniaturization....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7803H01L29/7809H01L29/0653H01L29/1054H01L29/7804H01L29/7832H01L29/0634H01L29/1095H01L29/7816
Inventor 温文莹
Owner NUVOTON