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Crystalline silicon cell with high resistance to mechanical load

A crystalline silicon cell and mechanical load technology, applied in the field of solar cells, can solve the problems of increased material cost, cumbersome process steps, increased labor cost, etc., and achieve the effect of reducing fragmentation rate, simple process and good compatibility

Pending Publication Date: 2018-07-10
JA SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent CN104935247A adopts the method of adding ribs on the frame of the component to improve the mechanical load resistance of the component. This method effectively reduces the battery fragmentation rate and power loss after the component is compressed, but this method not only adds additional ribs, the cost of materials increases, and additional stations are required to install the ribs, the process steps are cumbersome and additional labor costs are added

Method used

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  • Crystalline silicon cell with high resistance to mechanical load
  • Crystalline silicon cell with high resistance to mechanical load
  • Crystalline silicon cell with high resistance to mechanical load

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Such as figure 1 As shown, in the crystalline silicon battery with high mechanical load resistance provided by this embodiment, the back electrode of the crystalline silicon battery includes multiple columns of grid lines 1 distributed in parallel, and each column of grid lines includes six sections of sub-grid lines 2 arranged at intervals. A gap 3 is provided between the two ends of each sub-grid line and the back electric field.

[0042] Among them, the crystalline silicon battery adopts p-type polycrystalline silicon wafer.

[0043] The preparation method of the crystalline silicon battery with high mechanical load resistance comprises the following steps:

[0044] (1) Select a lightly doped p-type polysilicon wafer with a resistivity of 0.1-6Ω·cm, place the silicon wafer substrate in a texturing machine to remove the damaged layer and prepare the textured surface. The chemical solution used for texturing is hydrogen fluoride One or more mixed aqueous solutions of...

Embodiment 2

[0055]As shown in the figure, the difference from Embodiment 1 is that a p-type polysilicon wafer is used, and the back electrode includes multiple columns of gate lines arranged in parallel, and each gate line is composed of eight sub-gate lines arranged at intervals.

[0056] As shown in Table 2, according to the above examples, the results show that the debris rate at the end of the polycrystalline silicon battery module has decreased by more than 0.2%.

[0057] Table 2 Performance comparison between polycrystalline silicon battery components prepared in this example and conventional battery components

[0058] battery pack

Embodiment 3

[0060] Such as image 3 As shown, in the crystalline silicon cell with high mechanical load resistance provided in this embodiment, the back electrode of the crystalline silicon cell includes multiple columns of grid lines 1 distributed in parallel, and each column of grid lines includes eight sub-gate lines 2 arranged at intervals. A gap 3 is provided between the two ends of each sub-grid line and the back electric field.

[0061] The crystalline silicon wafer is a p-type PERC single crystal silicon wafer.

[0062] A passivation film is provided on the back of the PERC crystalline silicon cell, and a laser slotting line 4 is provided on the passivation film, and the laser slotting line 4 is disconnected at the position of the back electrode.

[0063] The passivation film is preferably an aluminum oxide and silicon nitride laminated passivation film.

[0064] The preparation method of the crystalline silicon battery with high mechanical load resistance comprises the followin...

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Abstract

The invention discloses a crystalline silicon cell with high resistance to a mechanical load. A back electrode of the crystalline silicon cell comprises rows of grid lines distributed in parallel, each row of grid lines includes six or eight sub grid lines arranged separately, and gaps are arranged between the two ends of each sub grid line and a backside electric field respectively. The back electrode and a laser groove are adjusted structurally, so that the crystalline silicon cell is avoided from a brittle fracture condition due to uneven bearing of the back electrode in the welding processor increased stress effect of the back electrode by laser damage, the fragment rate in the assembly end is reduced, and the resistance to mechanical load of the assembly is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a crystalline silicon cell with high mechanical load resistance. Background technique [0002] With the progress of human life, the demand for energy has increased rapidly. However, thermal power generation, which accounts for more than 70% of the world's total power generation, has become a problem of increasing concern due to the increasing shortage of resources and the gradual deterioration of the environment. The use of solar energy as a renewable resource for power generation has also attracted more and more attention. [0003] In recent years, with the development of crystalline silicon solar cell technology, the thickness of silicon wafers has been gradually reduced to reduce the cost of photovoltaic power generation. The decline in load capacity, especially the development of the PERC (passivated emitter back cell) process, the increase in the laser slotting process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1804Y02P70/50
Inventor 刘苗严金梅赵江雷王松许志卫
Owner JA SOLAR
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