Preparation method of source field plate of GaN-based HEMT device and HEMT device

Abstract

The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of the device successively; a part corresponding to a first area is removed from the SiO2 layer; the surface, toward a gate electrode region, of a part, corresponding to a second gate-drain area, in the residual area of the SiO2 layer is an inclined surface with a first inclination angle; parts corresponding to the source and drain electrode regions are removed from the SiO2 layer as well as the SiN layer successively; a metal layer in a third thickness is grown in a part, corresponding to a sourcefield plate area, in the upper surface of the device; and the metal layer covers the inclined surface of the part, corresponding to the second gate-drain area, of the SiO2 layer. The field plate prepared by the method is of a wedge-shaped structure, a die breakdown voltage can be improved substantially, a circuit avalanche effect can be inhibited, and performance of the device is improved substantially.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a GaN-based HEMT device source field plate and a HEMT device. Background technique [0002] Due to the advantages of high breakdown voltage, high power density, high electron mobility, and high electron saturation drift velocity, GaN devices have broad application prospects in military and civilian fields such as radar, aerospace, communications, and power electronics. [0003] GaN-based high electron mobility transistor (High Electron Mobility Transistor, HEMT) is a commonly used semiconductor device. During the working process of GaN-based HEMT devices, the drain terminal voltage can be as high as 50V or more, while the gate terminal voltage is generally -5V~5V, so the drain terminal gate edge electric field can be as high as MV / cm when the device is working. Because the GaN material has a very significant inverse piezoelectric effect...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a method for preparing a source field plate of a GaN-based HEMT device and a HEMT device, so as to solve the problem that the source field plate structure in the prior art cannot well improve the performance of a GaN-based HEMT device

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