Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material and preparation method, application and device thereof

A zrxsn1-xo2, epitaxial thin film technology, applied in semiconductor devices, metal material coating process, electrical components and other directions, to achieve the effect of simple and convenient equipment and operation, cheap and easy-to-obtain raw materials, and low-cost

Active Publication Date: 2018-08-14
HUBEI UNIV
View PDF11 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the current problem of deep ultraviolet detection, the present invention provides an ultra-wide bandgap Zr with adjustable bandgap x sn 1-x o 2 The preparation method of alloy semiconductor epitaxial thin film material and its application in ultraviolet light detection, in which ultra-wide bandgap Zr x sn 1-x o 2 The alloy semiconductor epitaxial thin film material is made by adding SnO in a certain molar ratio 2 and ZrO 2 Alloy ceramics synthesized by solid solution and grown by pulsed laser deposition thin film method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material and preparation method, application and device thereof
  • Ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material and preparation method, application and device thereof
  • Ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material and preparation method, application and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] According to Zr 0.05 sn 0.95 o 2 This doping formula weighs the SnO 2 19.1748g, ZrO 2 0.8252g for initial mixing of ingredients, then pour the mixed material into a ball mill tank and add absolute ethanol accounting for about 60% of the total powder mass, and then put it into a ball mill for 8 hours to make it fully and evenly mixed , and then wash the material that has been fully ball-milled and evenly mixed, such as with absolute ethanol, and transfer it to an evaporating dish, and then put it in a drying oven for drying treatment. After drying, the mixed material is transferred to the grinder Add absolute ethanol accounting for about 6% of the total mass of the powder into the bowl as a bonding agent, carry out sufficient grinding treatment to make the powder evenly bonded together to form a billet, and then use an electromagnetic hydraulic press to press the billet under a pressure of 4-6MPa Press into a ceramic green sheet with a mass of about 10g and a thick...

Embodiment 2

[0044] According to Zr 0.3 sn 0.7 o 2 This doping formula weighs the SnO 2 14.8102g, ZrO 2 5. 1898g for the initial mixing of the ingredients, then pour the mixed material into the ball mill tank and add anhydrous ethanol accounting for about 60% of the total powder mass, and then put it into the ball mill for 8 hours to make it fully and evenly mixed , and then wash the material that has been fully ball-milled and evenly mixed, and transfer it to an evaporating dish, and then put it in a drying oven for drying treatment. After drying, transfer the mixed material to a mortar and add Absolute ethanol, which accounts for about 6% of the total powder mass, is used as an adhesive agent, and the powder is evenly bonded together to form a billet after sufficient grinding treatment, and then the billet is pressed to a mass of about 10g under a pressure of 4-6MPa by an electromagnetic hydraulic press. The ceramic green sheet with a thickness of about 2-3mm is then placed in a tu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductor optoelectronic materials and devices and particularly relates to a band-gap-adjustable ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material and a preparation method and application of the band-gap-adjustable ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material to deep ultraviolet light detection. The method comprises the following steps that (1), a ceramic target material is prepared, specifically, the ceramic target material is formed by sintering a ceramic blank piece, and the ceramic blank piece comprises ZrO2 and SnO2; (2), the ceramic target material obtained in step (1) is deposited on a c-face sapphire substrate to prepare and grow an epitaxial thin film, and the ultra-wide forbidden band ZrxSn1-xO2 alloy semiconductor epitaxial thin film material is obtained, wherein x ranges from 0.01 to 0.99. The SnO2 serves as a substrate material of a detector, andthe pure SnO2 is doped to adjust the size of the band gap of the SnO2, so that the band gap of the SnO2 can meet the optical detection requirement of the deep ultraviolet wavelength range.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials and devices, in particular to an ultra-wide bandgap Zr with adjustable bandgap x sn 1-x o 2 Alloy semiconductor epitaxial thin film material and its preparation method and its application in deep ultraviolet light detection. Background technique [0002] Ultraviolet detection has extremely important applications in many fields, such as flame detection, missile plume tracking, sky ultraviolet detection and so on. Of course, there are many problems in the field of ultraviolet detection that need to be solved urgently. The most urgent and most attention-grabbing problem is the detection of light in the deep ultraviolet band. Since the wavelength of deep ultraviolet light is less than 280nm, it is required that the band gap Eg of the detector material is not less than 4.43eV; only when the band gap of the detector material is not less than 4.43eV will the detector hav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/08C23C14/28C23C14/24C23C14/18H01L31/09
CPCC23C14/08C23C14/18C23C14/24C23C14/28H01L31/09
Inventor 何云斌黎明锴程阳张腾卢寅梅张清风常钢李派陈俊年
Owner HUBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com