A device and method for depositing an interface layer on a fiber surface

Abstract

The invention discloses fiber surface interface layer deposition equipment and method. The equipment comprises a filament release device, an electrostatic filament scattering device, a magnetron sputtering device, a solid adhesive device and a filament collecting device. The filament collecting device and the filament release device are positioned on two sides of the magnetron sputtering device, the electrostatic filament scattering device is positioned between the filament release device and the magnetron sputtering device, and the solid adhesive device is positioned between the filament collecting device and the magnetron sputtering device. When the equipment is in operation, fiber bundles are released from the filament release device, then move to the electrostatic filament scattering device to be scattered, enter the magnetron sputtering device in a scattered state and are bundled by the solid adhesive device after an interface layer is obtained through magnetron sputtering deposition, and the fiber bundles are finally collected by the filament collecting device. The SiC fiber surface interface layer obtained according to the preparation method is uniform in thickness distribution, controllable in thickness and low in fiber damage and is a quasi-graphene structure weak interface layer, and mechanical performances of composite materials can be remarkably improved.

Description

technical field [0001] The invention relates to a device and a method for depositing an interface layer on a fiber surface, and belongs to the field of continuous fiber reinforced structural composite materials. Background technique [0002] SiC f / SiC composite material refers to the composite material with continuous SiC fiber as reinforcement and SiC ceramic as matrix. SiC f / SiC composite materials have excellent properties such as low density, high strength, high modulus, high temperature resistance, and oxidation resistance, and have broad application prospects in the fields of lightweight and high temperature resistance. In SiC f In SiC / SiC composites, the interface layer is the bridge between the braided fiber and the matrix material to transmit the load, and it is also the key factor for the preparation of continuous SiC fiber reinforced composites with excellent performance. In SiC f In / SiC composite materials, the ideal interface layer mainly has the followi...

AI Technical Summary

Problems solved by technology

The limitations of the chemical vapor deposition method to prepare the interface layer include: ①The chemical vapor deposition reaction requires heating, and the temperature required for the deposition of many interface substances exceeds the heat resistance limit of SiC fibers, which limits the interface layer system that can be prepared by chemical vapor deposition; ② The chemical vapor deposition reaction is difficult to control, and the chemical composition and organizational structure of the reaction products are often unable to be controlled under the optimal conditions; ③The chemical vapor deposition method uses gas molecules to diffuse into the SiC braid, and the diffusion is difficult to control, which is easy to cause the inner and outer interfaces of the braid The thickness of the layer is uneven, and for some precursor gases with large molecular weight, it is difficult to enter the interior of the braid for deposition

But for SiC f In the field of preparation of SiC / SiC composite materials, there is no report on the preparation of graphene-like structure interface layer by magnetron sputtering method. When shooting, objects close to the sputtering target will block the rear objects, making it difficult for the rear objects to achieve the expected sputtering effect

In SiC f Each bundle of SiC fibers used in the preparation of SiC composite materials consists of hundreds to thousands of fiber monofilaments overlapped together, and the traditional magnetron sputtering method is almost impossible to uniformly prepare the interface on the surface of each monofilament Layers, even if the fiber is loosened by manual methods, the fibers are often damaged, and the efficiency is extremely low, which has no practical application value

(2) The traditional magnetron sputtering method prepares a coating on the surface of the fiber, usually a functional coating with a thickness of only a few nanometers, while on SiC f The thickness of the interface layer required in the field of / SiC composite materials usually needs to reach more than 500nm, and the amount of fibers required for the preparation of braids is very large. Using the existing magnetron sputtering method to prepare SiC f The interface layer required in the field of / SiC composite materials will be very inefficient and has no practical value

(3) Part of the report on the preparation of the interface layer by magnetron sputtering refers to the preparation of a coating or interface layer on the surface of the thick SiC fiber. The diameter of the thick SiC fiber is large and the curvature is small. There is also less shading, which makes it easier for the traditional magnetron sputtering process to prepare coatings or interface layers on the surface of coarse SiC fibers; but for SiC f In the field of / SiC composite materials, the braidability of coarse SiC fibers is very poor, that is, it is difficult to weave SiC fiber braids using coarse SiC fibers prepared with an interface layer, which makes this process in SiC f / SiC composite materials field does not have good practicality

(4) In some fields, SiC fibers are first woven into SiC fiber cloth, and then the interface layer is prepared on the surface of the fiber cloth by using the traditional magnetron sputtering method. This method can effectively improve the preparation efficiency of the interface layer, but it has two major defects, the first , this method does not solve the problem of strong shadow effect of magnetron sputtering. The interface layer prepared by this method must have a large number of uneven interface layers, too thin interface layers, and some fibers without interfaces due to the mutual shielding between fiber filaments. layers and other issues, while in SiC f These problems in the field of SiC composite materials are fatal; second, the process limits the preparation of interface layers only on SiC fiber cloth, while on SiC f In the field of SiC composite materials, SiC fiber braids include but are not limited to fiber cloth, laminated braids, three-dimensional braids, three-way orthogonal, three-dimensional four-way and many other weaving methods. This process has great limitations.

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