Method for recovery of valuable metals from cigs solar thin film cell chamber waste

A solar thin film, valuable metal technology, applied in the improvement of process efficiency, instruments, optics, etc., can solve the problems of high production cost, complicated and dangerous operation, incomplete separation, etc., and achieve high-efficiency selective leaching, simple process flow, The effect of meeting environmental protection requirements

Active Publication Date: 2019-09-10
UNIV OF SCI & TECH BEIJING
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of this method is long, and the hydrazine hydrate used for reducing selenium is also highly toxic, the operation process is dangerous, and it is easy to cause environmental pollution.
[0007] To sum up, it can be seen that there are problems such as low comprehensive recovery rate, incomplete separation, complicated and dangerous operation, high production cost, and large environmental pollution in the existing copper indium gallium selenium waste recycling method. It is urgent to invent a CIGS that can solve the above problems. waste recycling method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recovery of valuable metals from cigs solar thin film cell chamber waste

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] like figure 1 As shown, the implementation steps of this embodiment include: taking 50g of CIGS solar thin film battery chamber waste for crushing and fine grinding, using ammonia and ammonium salt mixture solution of a certain mass concentration as a leaching agent to carry out ammonia leaching, and the ammonia concentration is 350g / L ( with NH 3The solid-liquid ratio before leaching is 5:1g / mL, the leaching temperature is 30°C, and the leaching time is 5h. After the leaching is completed, the ammonia leaching solution and ammonia leaching residue are obtained through liquid-solid separation; Electrolytic copper can be obtained; the ammonia leaching slag uses 80% NaOH solution as the leaching agent for alkaline leaching under normal pressure conditions. The leaching temperature of the alkaline leaching process is 40°C, the leaching time is 4.5h, and the solid-liquid ratio before leaching is 10:1g / mL, after leaching, the alkali leaching solution and alkali leaching res...

Embodiment 2

[0045] The implementation steps of this embodiment include: taking 100g CIGS solar thin film cell chamber waste material and crushing, finely grinding, carrying out ammonia leaching with a certain concentration of ammonia-containing solution as the leaching agent, ammonia concentration 250g / L (in the form of NH 3 The solid-liquid ratio before leaching is 1:10g / mL, the leaching temperature is 60°C, and the leaching time is 3h. After the leaching is completed, ammonia leaching solution and ammonia leaching residue are obtained through liquid-solid separation; after ammonia leaching solution extraction and electrowinning Electrolytic copper can be obtained; the ammonia leaching slag uses KOH solution with a mass concentration of 60% as the leaching agent for alkaline leaching under pressure. The leaching temperature of the alkaline leaching process is 30°C, the leaching time is 4.5h, and the solid-liquid ratio before leaching is 1:5g / mL, after leaching, the alkali leaching solutio...

Embodiment 3

[0047] The implementation steps of this embodiment include: taking 50g CIGS solar thin film cell chamber waste material and carrying out crushing, fine grinding, and carrying out ammonia leaching with a certain mass concentration of ammonia-containing solution as a leaching agent, and the ammonia concentration is 150g / L (in the form of NH 3 The solid-liquid ratio before leaching is 1:10g / mL, the leaching temperature is 60°C, and the leaching time is 3h. After the leaching is completed, ammonia leaching solution and ammonia leaching residue are obtained through liquid-solid separation; after ammonia leaching solution extraction and electrowinning Electrolytic copper can be obtained; the ammonia leaching residue uses NaOH solution with a mass concentration of 50% as the leaching agent to perform alkaline leaching under pressure. The leaching temperature of the alkaline leaching process is 90 ° C, the leaching time is 3 hours, and the solid-liquid ratio before leaching is 1. : 5g / ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for recovering valuable metals from a CIGS solar thin film waste material, and belongs to the technical field of resource secondary utilization. The method comprises the steps that the copper-indium-gallium-selenide (CIGS) solar thin film battery waste material is crushed, and then ammonia leaching is carried out after fine grinding; extraction and electrodepositionare carried out on an ammonia leaching solution, and then electrolytic copper can be obtained; the ammonia leaching residues are subjected to alkali leaching, and an alkaline leaching solution is electrolyzed and purified so as to separate gallium; acid leaching is carried out on alkali leaching residues, and acid leaching residues can be returned to the raw material; and SO2 is introduced into an acid leaching solution to reduce selenium, after the selenium is reduced, a filter liquid is reduced to extract indium, and the high-purity indium can be obtained through purification of the crude indium. According to the method for recovering the valuable metals from the CIGS solar thin film waste material, a novel technological idea is provided for comprehensively recovering the copper, the indium, the gallium and the selenium in the CIGS solar thin film battery chamber waste material, by adopting the method, the recovery rate of the Cu, the In, the Ga and the Se can reach 95% or above, high-efficiency selective leaching of the four valuable elements is realized, and a good application prospect is achieved.

Description

technical field [0001] The invention relates to the technical field of secondary utilization of resources, in particular to a method for recovering valuable metals from the wastes of CIGS solar thin film battery chambers. Background technique [0002] Low-carbon environmental protection is the only way for human sustainable development. In order to achieve this goal, it is necessary to develop new energy to replace the existing traditional fossil energy. Solar photovoltaic power generation occupies an important place in new energy; thin-film solar cells have become the development trend of the photovoltaic industry; and CIGS thin-film solar cells are currently the thin-film solar cells with the highest photoelectric conversion efficiency. CIGS was chosen as the absorber layer for high-efficiency solar cells due to the many advantages of the material itself. First, by adjusting the content of Ga, the forbidden band width of CIGS can be continuously adjusted within 1.04-1.67 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C22B7/00C22B15/00C25C1/12C22B58/00C25C1/22C01B19/02
CPCC01B19/02C22B7/007C22B7/008C22B15/0078C22B58/00C25C1/12C25C1/22Y02P10/20
Inventor 马保中王成彦陈永强邢鹏邵爽
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap