Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for recovering valuable metals from waste copper indium gallium selenide battery chips

A technology of copper indium gallium selenide and valuable metals, which is applied in the field of secondary utilization of resources, can solve problems such as high production cost, incomplete separation, complicated and dangerous operation, achieve high-efficiency selective leaching, meet environmental protection requirements, and simple process flow Effect

Active Publication Date: 2019-10-18
UNIV OF SCI & TECH BEIJING
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process of this method is long, and the hydrazine hydrate used for reducing selenium is also highly toxic, the operation process is dangerous, and it is easy to cause environmental pollution.
[0008] To sum up, it can be seen that there are problems such as low comprehensive recovery rate, incomplete separation, complicated and dangerous operation, high production cost, and large environmental pollution in the existing copper indium gallium selenium waste recycling method. It is urgent to invent a CIGS that can solve the above problems. Waste Chip Recycling Method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for recovering valuable metals from waste copper indium gallium selenide battery chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] like figure 1As shown, the implementation steps of this embodiment include: taking 50g of CIGS waste battery chips and peeling off the substrate, using the peeled valuable metal layer as an anode, and under the action of a DC power supply, controlling the voltage of the electrolyzer to 3.0V. Under the acidic condition of 50g / L sulfuric acid, all the waste battery chips are dissolved to obtain a mixed solution; the mixed solution is extracted with an extractant, and the organic phase and the aqueous phase are separated after extraction; Obtain copper cathode; pass SO into the water phase 2 , the flux is SO 2 The ratio of the amount of the substance to the amount of the Se substance in the raw material is 1.5mol / mol, which can be reduced to obtain crude selenium with a purity greater than 98%, and the filtrate is obtained after filtration; the filtrate is removed / separated to obtain zinc, cadmium, molybdenum, aluminum , tin slag and new filtrate; use a certain mass conc...

Embodiment 2

[0047] The implementation steps of this embodiment include: taking 100g of CIGS waste battery chips and peeling off the substrate, using the peeled valuable metal layer as an anode, under the action of a DC power supply, controlling the voltage of the electrolyzer to 1.5V, and when the acidity is 300g / Under the acidic conditions of L sulfuric acid, all the waste battery chips are dissolved to obtain a mixed solution; the mixed solution is extracted with an extractant, and the organic phase and the aqueous phase are separated after extraction; the organic phase can be stripped and electrolytically deposited to obtain cathode copper ; Feed SO into the water phase 2 , the flux is SO 2 The ratio of the amount of the substance to the amount of the Se substance in the raw material is 1.0mol / mol, which can be reduced to obtain crude selenium with a purity greater than 98%, and the filtrate is obtained after filtration; the filtrate is removed / separated to obtain zinc, cadmium, molyb...

Embodiment 3

[0049] The implementation steps of this embodiment include: taking 50g of CIGS waste battery chips and peeling off the substrate, using the peeled valuable metal layer as an anode, under the action of a DC power supply, controlling the voltage of the electrolyzer to 2.0V, and when the acidity is 200g / Under the acidic conditions of L sulfuric acid, all the waste battery chips are dissolved to obtain a mixed solution; the mixed solution is extracted with an extractant, and the organic phase and the aqueous phase are separated after extraction; the organic phase can be stripped and electrolytically deposited to obtain cathode copper ; Feed SO into the water phase 2 , the flux is SO 2 The ratio of the amount of the substance to the amount of the Se substance in the raw material is 1.2mol / mol, which can be reduced to obtain crude selenium with a purity greater than 98%, and the filtrate is obtained after filtration; the filtrate is removed / separated to obtain , tin slag and new f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for recovering valuable metals from a copper indium gallium selenium waste battery chip, and belongs to the technical field of resource secondary utilization. The method comprises the steps that the copper indium gallium selenium (CIGS) waste battery chip undergoes substrate stripping, and a stripped valuable metal layer is electrically dissolved to obtain a mixed solution; the organic phase and the water phase are separated through extraction of the mixed solution; the organic phase undergoes back extraction and electrodeposition to obtain cathode copper; SO2 is introduced into the water phase to reduce selenium, and filtering is carried out to obtain a first filtrate; the first filtrate undergoes impurity removing / separating to obtain slag and a second filtrate which contain zinc, cadmium, molybdenum, aluminum and tin; the second filtrate undergoes neutralizing and precipitating to obtain a neutralization precipitation solution and neutralization precipitation slag; the neutralization precipitation solution is reduced to obtain crude indium, and the crude indium is refined to obtain high-purity indium; the neutralization precipitation slag undergoes alkaline leaching, and the alkaline leached slag returns for neutralization and precipitation; and a alkaline leached solution undergoes electrolyzing to obtain crude gallium and an electrolytic barren solution, the crude gallium is refined to obtain high-purity gallium, and the electrolytic barren solution returns for alkaline leaching. According to the method, high-efficiency selective leaching of copper, indium, gallium and selenium can be realized, and the method has a good application prospect.

Description

technical field [0001] The invention relates to the technical field of resource secondary utilization, in particular to a method for recovering valuable metals from copper indium gallium selenium waste battery chips. Background technique [0002] CIGS thin-film solar cells are low in cost, stable in performance, soft and portable, good in light transmission, strong in applicability, high in photoelectric efficiency, and can be designed into any size and power. Its application range is getting wider and wider, and it has good development potential. [0003] Its production methods include vacuum sputtering method, distillation method and non-vacuum coating method. No matter which production method is used, some copper indium gallium selenide waste will be generated during the production process. From the perspective of green economy, environmental protection and sustainable development, in order to facilitate the sustainable utilization of rare metals such as indium, gallium ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22B7/00C22B15/00C22B58/00C25C1/12C25C1/22C01B19/02
CPCC01B19/02C22B7/006C22B7/008C22B15/0084C22B58/00C25C1/12C25C1/22Y02P10/20
Inventor 马保中王成彦陈永强邵爽邢鹏
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products