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Thulium-doped microsphere cavity laser and preparation method thereof

A laser and microsphere cavity technology, applied in the field of micro-optical devices, can solve the problems of the laser performance of semiconductor lasers that are greatly affected by temperature, the beam divergence angle is large, the directionality, monochromaticity and coherence are not ideal, etc., and achieve laser output. Stable, high quality factor, easy to create effects

Active Publication Date: 2018-08-21
HARBIN ENG UNIV
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the laser performance of semiconductor lasers is greatly affected by temperature, and the divergence angle of the beam is large, so it is not ideal in terms of directionality, monochromaticity and coherence.

Method used

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  • Thulium-doped microsphere cavity laser and preparation method thereof
  • Thulium-doped microsphere cavity laser and preparation method thereof
  • Thulium-doped microsphere cavity laser and preparation method thereof

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Embodiment Construction

[0017] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0018] A thulium-doped microsphere cavity laser, consisting of microspheres doped with thulium ions coupled to a tapered fiber; the pump light source is 808nm laser, coupled with a tapered fiber to thulium-doped microspheres; a 2μm laser is output from the other end of the tapered fiber .

[0019] A method for preparing a thulium-doped microsphere cavity laser, comprising the following steps:

[0020] (1) prepare the solution containing thulium ion by sol-gel method;

[0021] (2) Immerse the end of the communication optical fiber with the coating removed in a solution containing thulium ions to make the solution adhere to the optical fiber, and then heat and melt the end of the optical fiber with a carbon dioxide laser; the end of the optical fiber forms a very smooth and very spherical microsphere, Immerse the microspheres again in the solution...

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Abstract

The invention discloses a thulium-doped microsphere cavity laser and a preparation method thereof, and belongs to the micro-optical device technical field. The thulium-doped microsphere cavity laser is composed of a thulium ion-doped microsphere coupling tapered optical fiber; an 808 nm laser is adopted as a pump light source; the tapered optical fiber is adopted to couple thulium-doped microspheres; and 2-micron laser can be outputted from the other end of the tapered optical fiber. A sol-gel method is adopted to prepare a thulium ion-containing solution; a carbon dioxide laser is adopted toheat the tail end of a communication optical fiber coated with the solution, and therefore, a thulium ion-doped carbon dioxide microsphere can be prepared; a heating and stretching method is adopted to obtain a tapered optical fiber by means of a ceramic heater, the diameter of the tapered region of the tapered optical fiber ranges from 1 micron to 5 microns; the microsphere is coupled to the tapered optical fiber under the control of a three-dimensional platform, so that a microsphere laser which is capable of stably outputting 2-micron band laser, with an 808 nm laser adopted as a pump source, a microsphere adopted a resonant cavity, and thulium ions adopted as a working substance, can be obtained. Since the commercially available 808 nm laser is adopted as the pump light source, the practical value of the thulium-doped microsphere cavity laser of the invention can be greatly improved. The thulium-doped microsphere cavity laser has the advantages of simple fabrication, low threshold,miniaturization and stable output.

Description

technical field [0001] The invention belongs to the technical field of micro-optical devices, and in particular relates to a thulium-doped microsphere cavity laser and a preparation method thereof. Background technique [0002] The invention of the laser is a major achievement of science and technology in the 20th century. Its theoretical basis is the concept of stimulated radiation proposed by Einstein in 1916. The theory points out that when the energy of the external radiation photon is just equal to the energy between the excited state and the low-energy state or the ground state of the luminescent atom in the excited state, the luminescent atom in the excited state will move to the low-energy state or the ground state under the action of the external radiation field. The frequency, phase, direction of propagation, and polarization state of the photons radiated during the transition are exactly the same as those of the extrinsic radiation photons. The light output by t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16H01S3/08H01S3/067
CPCH01S3/06716H01S3/08013H01S3/1616
Inventor 王鹏飞李昂震余吉波方再金王顺宾任晶
Owner HARBIN ENG UNIV
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