High reflection film with high damage threshold and preparation method thereof

A technology with high damage threshold and high reflection film, which is applied in the field of optics and can solve problems such as processing that does not consider heat conduction/accumulation

Active Publication Date: 2020-09-18
苏州沛斯仁光电科技有限公司
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are all aimed at reducing the intrinsic or defect absorption of the high-reflection film system, and none of them consider the heat conduction / accumulation process caused by light absorption.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High reflection film with high damage threshold and preparation method thereof
  • High reflection film with high damage threshold and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: A high-reflection film with a high damage threshold, using crystalline silicon as a substrate, one of the surfaces of the substrate is evenly distributed with mesoporous silicon micro-wire arrays 1 with a pitch of the order of microns, and the other of the substrate is Several groups of high and low refractive index film pairs with an optical thickness of 1 / 4 wavelength are arranged on the surface, with the substrate surface as the inner side, and the high and low refractive index film pairs are sequentially composed of high refractive index film pairs with an optical thickness of 1 / 4 wavelength from the inside to the outside. Film 2, a low-refractive-index film 3 with an optical thickness of 1 / 4 wavelength; the outermost high- and low-refractive-index film pair is followed by a high-refractive index film 2 with an optical thickness of 1 / 4 wavelength and a film with an optical thickness of 1 / 2 wavelength Low refractive index film4.

Embodiment 2

[0031] Based on the above-mentioned high reflection film, a method for preparing a high damage threshold high reflection film is also provided, comprising the following steps:

[0032] 1). Using crystalline silicon as the substrate, the crystalline silicon can be a double-sided polished heavily doped wafer (resistivity<0.01Ω·cm), and then perform template-assisted chemical silicon etching on one surface of the crystalline silicon, The thickness of the unetched silicon is about 100 microns, and a silicon micron line array with a pitch in the order of microns and a mesoporous surface is obtained. The preparation principle and corrosion process conditions can refer to other invention patents, the patent application number is 201610183558.7.

[0033] 2). On the other surface of the uncorroded substrate, use atomic layer deposition technology to grow a high refractive index film, and then use the sol-gel method to grow a low refractive index film. The optical thickness of the high ...

Embodiment 3

[0047] Compared with the second embodiment, the difference lies in the high reflection of different target wavelengths, and the optical thickness of the high and low refractive index film needs to be adjusted accordingly. The preparation process and parameters of silicon micro-wire arrays are consistent, but the growth experimental parameters of high and low refractive index films need to be changed according to the experimental results.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The present invention belongs to the technical field of optics, and especially relates to a high-reflective film with a high damage threshold, and a preparation method thereof. The objective of the invention is to solve light absorption caused by interface defects and achieve rapid conduction for generated heat to avoid generation of a cumulative effect of heat. The high-reflective film with a high damage threshold takes a crystalline silicon as a substrate, and template-assisted chemical corrosion silicon etching is performed on one surface of the crystalline silicon to obtain a silicon micron line array having a distance with micron dimension and a surface in a mesoporous shape; an atomic layer deposition technology is employed to grow a thin film with a high refractive index on the other surface of an uncorroded substrate, and a sol-gel method is employed to grow a thin film with a low refractive index, wherein the optical thicknesses of the high refractive index and the low refractive index are 1 / 4 of a target wavelength; the thin film with the high refractive index and the thin film with the low refractive index form a high-low refractive index thin film pair; and the high-lowrefractive index thin film pair having optical thickness with 1 / 4 wavelength is repeatedly grown for many times, and finally, a thin film with the high refractive index having optical thickness with1 / 4 wavelength and a thin film with the low refractive index having optical thickness with 1 / 2 wavelength are grown in order.

Description

technical field [0001] The invention belongs to the field of optical technology, and in particular relates to a high reflection film and a manufacturing method thereof. Background technique [0002] Optical film systems and substrate components used in high-power, high-energy-density lasers are important components of the entire laser system, and their anti-laser damage performance is directly related to the output level of the system, which has also become an obstacle to the development of strong laser systems. and a key obstacle to widespread application. Since the laser damage to the film system involves many aspects such as photothermal, photoelectric, laser parameters, material properties, nonlinear absorption, electric field effect, plasma effect, etc., there is currently no consensus on the damage mechanism, and there is also a lack of universal theory. . However, after years of hard work by theoretical and experimental workers, a lot of gratifying results have been...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/08
CPCG02B5/0816
Inventor 吴绍龙吴爱华
Owner 苏州沛斯仁光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap