Unlock instant, AI-driven research and patent intelligence for your innovation.

Self-supporting fluorine-nitrogen-doped graphene film material and preparation method thereof

A graphene film, self-supporting technology, applied in the direction of electrical components, electrochemical generators, battery electrodes, etc., to achieve the effect of simple operation, good electrochemical performance and mechanical performance, and low cost

Inactive Publication Date: 2018-08-24
TIANJIN UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the defects of existing carbon materials, to provide a self-supporting fluorine nitrogen doped graphene film material and its preparation method, which is simple to operate, fast and environmentally friendly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-supporting fluorine-nitrogen-doped graphene film material and preparation method thereof
  • Self-supporting fluorine-nitrogen-doped graphene film material and preparation method thereof
  • Self-supporting fluorine-nitrogen-doped graphene film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0025] (1) Graphene oxide was dispersed in deionized water by ultrasonic vibration to obtain a 2 mg / mL brown solution.

[0026] (2) Pour the solution obtained in (1) onto a polytetrafluoroethylene plate, and dry it in air at 60° C. for 24 hours to obtain a graphene oxide film.

[0027] (3) The graphene oxide membrane was immersed in a mixture consisting of 25mL of acetonitrile and 1mL of hydrofluoric acid, and the mixture was placed in a polytetrafluoroethylene-lined reaction kettle, sealed and heated to 90°C for 24h.

[0028] (4) After the product in (3) was cooled to room temperature, residual reagents were removed with deionized water, and then dried in a vacuum oven at 60° C. for 24 h.

example 2

[0030] (1) Graphene oxide was dispersed in deionized water by ultrasonic vibration to obtain a 2 mg / mL brown solution.

[0031] (2) Pour the solution obtained in (1) onto a polytetrafluoroethylene plate, and dry it in air at 60° C. for 24 hours to obtain a graphene oxide film.

[0032] (3) The graphene oxide membrane was immersed in a mixture consisting of 25mL of acetonitrile and 1mL of hydrofluoric acid, and the mixture was placed in a polytetrafluoroethylene-lined reaction kettle, sealed and heated to 120°C for 24h.

[0033] (4) After the product in (3) was cooled to room temperature, residual reagents were removed with deionized water, and then dried in a vacuum oven at 60° C. for 24 h.

example 3

[0035] (1) Graphene oxide was dispersed in deionized water by ultrasonic vibration to obtain a 2 mg / mL brown solution.

[0036] (2) Pour the solution obtained in (1) onto a polytetrafluoroethylene plate, and dry it in air at 60° C. for 24 hours to obtain a graphene oxide film.

[0037] (3) The graphene oxide membrane was immersed in a mixture of 25 mL of acetonitrile and 1 mL of hydrofluoric acid, and the mixture was placed in a polytetrafluoroethylene-lined reaction kettle, sealed and heated to 150°C for 24 hours.

[0038] (4) After the product in (3) was cooled to room temperature, residual reagents were removed with deionized water, and then dried in a vacuum oven at 60° C. for 24 h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a self-supporting fluorine-nitrogen-doped graphene film material and a preparation method thereof. The preparation method comprises: uniformly arranging deionized water with uniformly dispersed graphene oxide on a substrate to form a liquid film, and drying in an air atmosphere to obtain a graphene oxide film; and immersing the graphene oxide film into a mixed solution comprising acetonitrile and hydrofluoric acid, and carrying out sealed heating and thermal insulation to dope the graphene oxide film with fluorine and nitrogen. According to the present invention, the graphene oxide prepared by using the mold casting drying method is used, such that the disadvantage of time consuming of the vacuum filtration method is overcome, the prepared graphene oxide has good mechanical property and good toughness, and the doping degree and the mechanical property of the self-supporting fluorine-nitrogen-doped graphene film can be adjusted through the hydrothermal temperature so as to achieve the controllable preparation of the fluorine-nitrogen-doped graphene material.

Description

technical field [0001] The invention relates to a self-supporting fluorine-nitrogen-doped graphene film material and a preparation method thereof, in particular to a preparation method of a fluorine-nitrogen-doped graphene film material with good flexibility and its application in a foldable sodium-ion battery It belongs to the technical field of energy storage materials. Background technique [0002] Sodium-ion batteries are considered to be the most promising to replace lithium-ion batteries in the future because of the abundant sodium resources in the world and the same energy storage mechanism as lithium-ion batteries. However, the large ionic radius of sodium ions puts forward almost strict requirements on the electrode materials of sodium ion batteries. Fluorine-nitrogen-doped graphene materials are considered to be the most promising electrode materials for sodium-ion batteries because they not only have a large interlayer spacing of ordinary carbon materials, but al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/587H01M4/62H01M4/133H01M10/054
CPCH01M4/133H01M4/364H01M4/587H01M4/62H01M10/054Y02E60/10
Inventor 封伟陈昱霖李瑀
Owner TIANJIN UNIV