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A method of annealing to form a charge storage structure

A technology of charge storage and annealing treatment, which is applied in the direction of circuits, electrical components, and electrical solid-state devices, and can solve problems such as the complexity of the device preparation process

Active Publication Date: 2020-04-14
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For traditional SONOS charge storage devices, chemical vapor deposition, physical sputtering and other methods are usually used to sequentially grow tunneling layer, storage layer, and barrier layer on the surface of the substrate material to form a charge storage structure, and the device preparation process is relatively complicated.

Method used

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  • A method of annealing to form a charge storage structure
  • A method of annealing to form a charge storage structure
  • A method of annealing to form a charge storage structure

Examples

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Embodiment 1

[0019] Embodiment 1: monolayer (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 The film preparation process is as follows:

[0020] a) Place the silicon substrate in acetone and ultrasonically clean it for 1 minute to remove impurities on the surface of the substrate, then place the substrate in a dilute solution of hydrofluoric acid to remove oxides on the surface of the silicon substrate, and then place the silicon substrate On the substrate table in the cavity of the pulsed laser deposition system, the multicomponent metal oxide (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 and aluminum (Al) targets are placed on the target chassis, and the pressure in the deposition chamber is 1 × 10 -5 Pa;

[0021] b) Using a pulsed laser deposition system to deposit a layer of (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 film;

[0022] c) Using a pulsed laser deposition system on (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 Deposit a layer of 100 Al metal on the surface of the film as an electrode;

Embodiment 2

[0023] Embodiment 2: annealing monolayer (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 The film preparation process is as follows:

[0024] a) Place the silicon substrate in acetone and ultrasonically clean it for 1 minute to remove impurities on the surface of the substrate, then place the substrate in a dilute solution of hydrofluoric acid to remove oxides on the surface of the silicon substrate, and then place the silicon substrate On the substrate table in the cavity of the pulsed laser deposition system, the multicomponent metal oxide (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 and aluminum (Al) targets are placed on the target chassis, and the pressure in the deposition chamber is 1 × 10 -5 Pa;

[0025] b) Using a pulsed laser deposition system to deposit a layer of (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 film;

[0026] c) Raise the temperature of the substrate table to 850 °C, the deposited (ZrO 2 ) 0.8 (Al 2 o 3 ) 0.2 The film was annealed at 850°C for 1 hour to make (ZrO 2 ) 0.8 (Al 2 o...

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Abstract

The invention discloses a method for annealing to form a charge storage structure. Through the annealing process, a single-layer multi-component metal oxide (M) x (N) 1‑x Characteristics of crystallization, diffusion and redistribution at low crystallization temperature M during film annealing, spontaneous formation of N-rich (M) x (N) 1‑x Tunneling layer / M-rich (M) x (N) 1‑x Storage Tier / N-rich (M) x (N) 1‑x Blocking layer charge storage structure, where M can be in ZrO 2 , HfO 2 , La 2 o 3 、TiO 2 Choose one of them, N can be in SiO 2 、Al 2 o 3 Choose one of them.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and materials thereof, and relates to a method for forming a charge storage structure by annealing treatment. Background technique [0002] With the continuous progress of the information society, non-volatile semiconductor memory has achieved unprecedented development. In the family of non-volatile memory devices, the silicon-oxide-nitride-oxide-polysilicon (SONOS) type charge trap memory device has become a kind of extremely application due to its high stability and good compatibility with semiconductor processes. Foreground memory structures in which an oxide (SiO 2 ) tunneling layer, nitride (Si 3 N 4 ) storage layer, and the oxide (SiO 2 ) barrier layer constitutes a typical sandwich charge storage structure. Under the programming operation of the device, the charge passes through the tunneling layer, enters the storage layer, and is trapped by the defects in the storage layer, so ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L27/11568H10B43/30
CPCH01L21/02178H01L21/02189H01L21/02266H01L21/02318H10B43/30
Inventor 汤振杰李荣胡丹
Owner ANYANG NORMAL UNIV
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