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MnTe2 based novel thermoelectric material and preparation method thereof

A thermoelectric material, mn1-xagxte2 technology, applied in the field of MnTe2-based new thermoelectric materials and their preparation, can solve problems such as high resistivity, and achieve the effect of improving zT value, optimizing electrical properties, and improving power factor

Inactive Publication Date: 2018-09-07
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the intrinsic MnTe 2 The resistivity is too high. Therefore, increasing the carrier concentration to reach the optimal range can effectively improve the electrical properties of the material, but no related work has been reported yet.

Method used

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  • MnTe2 based novel thermoelectric material and preparation method thereof
  • MnTe2 based novel thermoelectric material and preparation method thereof
  • MnTe2 based novel thermoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] A MnTe 2 Based thermoelectric material, the chemical formula is Mn 1-x Ag x Te 2(0≤x≤0.04), take x=0, 0.0005, 0.01, 0.02, 0.03, 0.04 in this embodiment to prepare MnTe with different carrier concentrations 2 Base block material:

[0047] (1) by chemical formula Mn 1-x Ag x Te 2 (0≤x≤0.04) Calculate the required weight of the elements, and weigh the elemental elements with a purity greater than 99.7% on the Mettler balance, and put each elemental element into the quartz tube in order of melting point from high to low, and draw Packaging after vacuum;

[0048] (2) Put the quartz tube containing the raw material into a vertical tube furnace and heat it to 1223K, let the raw material melt and react for 6 hours, then quench and rapidly cool

[0049] (3) Put the quenched quartz tube into a vertical tube furnace to heat to 923K, anneal for 3 days, and then quench and quench to obtain an ingot.

[0050] (4) Grind the ingot and put the powder into a graphite mold with a...

Embodiment 2

[0060] Compared with Example 1, most of them are the same, except that in this example, the heating process of high-temperature melting in step (2) is specifically: heating up to 1273K at a rate of 150K / h, and holding at this temperature for 8h, The raw materials are melted and reacted.

Embodiment 3

[0062] Compared with Example 1, most of them are the same, except that in this example, the heating process of high-temperature melting in step (2) is specifically: heating up to 1323K at a rate of 250K / h, and keeping it warm at this temperature for 4h, The raw materials are melted and reacted.

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Abstract

The invention relates to a MnTe2 based novel thermoelectric material and a preparation method thereof; the chemical formula of the MnTe2 based novel thermoelectric material is Mn1-xAgxTe2, wherein 0<=x<=0.04. compared with the prior art, the method uses silver doping to greatly improve the cavity concentration of the MnTe2 base material, thus optimizing the material electric performance; based onthe material wide span carrier concentration, the method can reasonably utilize a SPB theory model to analyze the thermoelectric properties; the crystal lattice constant changes caused by doping and the mass difference between silver and manganese can enhance phonon scattering, thus reducing crystal lattice thermal conductivity; the minimum crystal lattice thermal conductivity ~0.5W / m-K of the MnTe2 base material can be approached at 850K; in addition, the electric performance optimization and crystal lattice thermal conductivity reduction can enable the material thermoelectric merit value toreach 0.7 at 850K, thus indicating the potential of the MnTe2 base material that becomes a high performance thermoelectric material.

Description

technical field [0001] The present invention relates to the technical field of new energy materials, in particular to a kind of MnTe 2 Novel thermoelectric materials and their preparation methods. Background technique [0002] Since the beginning of the new world, society has developed rapidly, and people's living standards have also been continuously improved, followed by an ever-increasing demand for energy. The energy consumption in today's society is still dominated by fossil energy. And the continuous exploitation of fossil energy has been exhausted day by day. At the same time, the use of fossil energy has brought great damage to the environment and destroyed the natural ecological environment. Energy shortage and environmental pollution will become the main crises facing human society. Therefore, it is necessary to vigorously develop renewable energy and develop new energy materials. Hot-spot semiconductor materials can directly convert thermal energy and electri...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文徐屹东
Owner TONGJI UNIV
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