A composite film used for a solar cell and a preparation method therefor and application thereof

A technology of solar cells and composite films, applied in the field of composite films, can solve the problems of low reflection utilization rate of solar cells and cannot meet the needs of photovoltaic cells and thermoelectric cells at the same time, and achieve the effect of easy control of process conditions and good dispersion

Inactive Publication Date: 2018-09-14
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the low reflection utilization rate of solar cells cannot meet the needs of photovoltaic cells and thermoelectric cells at the same time.

Method used

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  • A composite film used for a solar cell and a preparation method therefor and application thereof
  • A composite film used for a solar cell and a preparation method therefor and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Select copper indium gallium selenide solar cells as photovoltaic cells:

[0036] (1) The process of preparing AZO thin films by magnetron sputtering is as follows:

[0037] Using the glass slide as the substrate, ultrasonically cleaned with analytically pure acetone, analytically pure alcohol and deionized water in turn, dried with pure nitrogen, and then put the substrate into the magnetron sputtering reaction chamber, and used radio frequency magnetron sputtering. The method grows AZO thin films on the substrate, the substrate temperature is 180℃ during sputtering, and the sputtering power density is 5W / cm 2 , the sputtering pressure is 0.8Pa, the sputtering protective gas is argon, and the sputtering time is 20min. The thickness of the obtained AZO thin film was 800 nm.

[0038] (2) The process of preparing Ag thin films by magnetron sputtering is as follows:

[0039] Ag film was grown on the prepared AZO film, the substrate temperature was room temperature durin...

Embodiment 2

[0045] Selection of perovskite solar cells as photovoltaic cells:

[0046] (1) The process of preparing AZO thin films by magnetron sputtering is as follows:

[0047]Using the glass slide as the substrate, ultrasonically cleaned with analytically pure acetone, analytically pure alcohol and deionized water in turn, dried with pure nitrogen, and then put the substrate into the magnetron sputtering reaction chamber, and used radio frequency magnetron sputtering. Methods The AZO film was grown on the substrate. The substrate temperature was 200℃, the sputtering power density was 5W / cm2, the sputtering pressure was 0.9Pa, the sputtering protective gas was argon, and the sputtering time was 15min. The thickness of the obtained AZO thin film was 400 nm.

[0048] (2) The process of preparing Ag thin films by magnetron sputtering is as follows:

[0049] Ag film was grown on the prepared AZO film. During sputtering, the substrate temperature was room temperature, the sputtering power ...

Embodiment 3

[0055] Select copper indium gallium selenide solar cells as photovoltaic cells:

[0056] (1) The process of preparing AZO thin films by magnetron sputtering is as follows:

[0057] Using the glass slide as the substrate, ultrasonically cleaned with analytically pure acetone, analytically pure alcohol and deionized water in turn, dried with pure nitrogen, and then put the substrate into the magnetron sputtering reaction chamber, and used radio frequency magnetron sputtering. Methods AZO thin films were grown on the substrate. The substrate temperature was 230℃, the sputtering power density was 5W / cm2, the sputtering pressure was 0.3Pa, the sputtering protective gas was argon, and the sputtering time was 10min. The thickness of the obtained AZO thin film was 600 nm.

[0058] (2) The process of preparing Ag thin films by magnetron sputtering is as follows:

[0059] Ag film was grown on the prepared AZO film. The substrate temperature was room temperature during sputtering, the ...

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Abstract

The invention relates to a composite film used for a solar cell. The structure of the composite film is X/Ag/AZO, wherein X is one or more than one selected from the group of SiO2, TiO2 and VO2. The technical solution is characterized in that the AZO layer and the Ag layer are manufactured by using a magnetron sputtering method and the SiO2 and TiO2 thin films are prepared by using the magnetron sputtering method and an emulsion-gel method. The composite film has the advantages of high visual light transmission and high infrared reflection and is suitable for monocrystalline silicon, polycrystalline silicon, noncrystalline silicon, perovskite, CIGS or dye-sensitized solar cells.

Description

Technical field: [0001] The invention relates to a composite film, in particular to a composite film with high visible light transmission and high infrared reflection for solar cells, and a preparation method and application thereof. Background technique: [0002] Solar energy is a clean energy that can be directly developed and utilized without pollution. The annual energy radiated by the sun to the earth is about 3×1024J, which is about 6000 times of the current global energy consumption. So solar energy has great potential as a clean energy source. According to the U.S. Department of Energy's estimates of primary energy consumed, more than 55 percent of that energy is ultimately released into the environment as waste heat. Therefore, the effective use of solar energy and thermal energy is closely related to the purpose of people's continuous improvement of material living standards. [0003] When sunlight hits the surface of the solar cell, part of it is reflected back...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/054H01L31/18
CPCH01L31/02167H01L31/02168H01L31/18H01L31/0543H01L31/0547Y02E10/52Y02E10/542Y02P70/50
Inventor 盛鹏赵广耀徐丽刘双宇王博刘海镇马光韩钰陈新李爱民王耀明黄富强
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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