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A kind of high-quality gan thin film and preparation method thereof

A high-quality, thin-film technology, applied in the direction of semiconductor devices, semiconductor lasers, electrical components, etc., can solve problems such as unstable structures, high pressure, and complex processes, and achieve the effects of stress reduction, performance improvement, and crystal quality improvement

Active Publication Date: 2019-07-16
太原理工大学建筑设计研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a high-quality GaN thin film and its preparation method for the problems of many dislocations, high pressure, unstable structure and complicated process in the existing GaN thin film

Method used

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  • A kind of high-quality gan thin film and preparation method thereof
  • A kind of high-quality gan thin film and preparation method thereof
  • A kind of high-quality gan thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] High-quality GaN thin film preparation methods, such as figure 1 shown, including the following steps:

[0031] first step, such as figure 1 As shown in a, by the in-situ growth method, the nucleation layer, the first non-doped GaN layer, the SiN x mask layer, wherein the growth temperature of the nucleation layer is 500°C; the growth temperature of the first non-doped GaN layer is 1000°C, and the thickness is 100nm; the SiN x The growth temperature of the mask layer is 1050°C, and the thickness is 10nm;

[0032] In the second step, the sample obtained in the first step was placed in NH at 900°C 3 and H 2 In situ pulse decomposition in a mixed atmosphere, NH 3 Turn on for 20s, pause for 20s, cycle 15 times, H 2 Continuous access, after 10min, will get image 3 As shown in the morphology, the first non-doped GaN layer has a porous structure;

[0033] The third step is to grow SiN on the epitaxial structure obtained in the second step x Passivation layer, the gro...

Embodiment 2

[0037] High-quality GaN thin film preparation methods, such as figure 1 shown, including the following steps:

[0038] first step, such as figure 1 As shown in a, by the in-situ growth method, the nucleation layer, the first non-doped GaN layer, the SiN x mask layer, wherein the growth temperature of the nucleation layer is 530°C; the growth temperature of the first non-doped GaN layer is 1050°C, and the thickness is 3μm; the SiN x The growth temperature of the mask layer is 1050°C, and the thickness is 50nm;

[0039] In the second step, the sample obtained in the first step is placed in NH at 1000°C 3 and H 2 In situ pulse decomposition in a mixed atmosphere, NH 3 Turn on for 60s, pause for 60s, cycle 10 times, H 2 Continuous access, after 20min, will get Figure 4 As shown in the morphology, the first non-doped GaN layer has a porous structure;

[0040]The third step is to grow SiN on the epitaxial structure obtained in the second step x Passivation layer, the growt...

Embodiment 3

[0044] High-quality GaN thin film preparation methods, such as figure 1 shown, including the following steps:

[0045] first step, such as figure 1 As shown in a, by the in-situ growth method, the nucleation layer, the first non-doped GaN layer, the SiN x mask layer, wherein the growth temperature of the nucleation layer is 570°C; the growth temperature of the first non-doped GaN layer is 1100°C, and the thickness is 5 μm; the SiN x The growth temperature of the mask layer is 1050°C, and the thickness is 100nm;

[0046] In the second step, the sample obtained in the first step is placed in NH at 1100°C 3 and H 2 In situ pulse decomposition in a mixed atmosphere, NH 3 Enter 45s, pause 45s, cycle 20 times, H 2 Continuous access, after 30min, will get Figure 5 As shown in the morphology, the first non-doped GaN layer has a porous structure;

[0047] The third step is to grow SiN on the epitaxial structure obtained in the second step x Passivation layer, the growth tempe...

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Abstract

The invention relates to a high-quality GaN film and a preparation method thereof and belongs to the technical field of semiconductors to solve the multiple dislocations, the large pressure, the unstable structure and the complicated process of a conventional GaN film. The high-quality GaN film includes a sapphire substrate and a group including a nucleation layer, a first undoped GaN layer, a SiNx mask layer, a SiNx passivation layer, and a second undoped GaN layer which are successively stacked on the crystal face of the substrate. After grown,the SiNx mask layer is subjected to in-situ pulse decomposition. Since the SiNx mask layer may cover the non-dislocation of the GaN surface, the exposed dislocations are decomposed first to form a porous structure due to the relatively poor thermalstability in the in-situ pulse decomposition process of the first undoped GaN layer. Then the SiNx passivation layer and the second undoped GaN layer are grown to finally prepare the high-quality GaNfilm. The preparation method of the present invention greatly improves the crystal quality of the film.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high-quality GaN thin film and a preparation method thereof. Background technique [0002] GaN is a wide bandgap semiconductor material. Its direct bandgap width is 3.39eV at room temperature. It has the characteristics of high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. It is the third generation Representative of semiconductors, widely used in high-brightness blue, green, violet and white light diodes, blue and violet lasers, and radiation-resistant, high-temperature, high-power microwave devices and other fields. [0003] In recent years, with the continuous expansion of the application range of GaN-based materials, its shortcomings have gradually emerged. Due to the high melting point of GaN single crystal (2800°C), it is extremely difficult to prepare GaN substrate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/22H01L33/00H01S5/30
CPCH01L33/007H01L33/12H01L33/22H01S5/3013
Inventor 贾伟樊腾李天保仝广运董海亮许并社
Owner 太原理工大学建筑设计研究院有限公司
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