In-situ luminous flux monitoring and exposure dose compensating method

Abstract

The invention relates to an in-situ luminous flux monitoring and exposure dose compensating method. The method comprises the following steps: measuring the luminous flux of a main light beam going through an exit slit and entering a vacuum chamber before a lithography experiment by using a photodiode, monitoring the intensity of main light beam going through the exit slit and entering the vacuum chamber and the luminous flux of stray lights directly proportional to the main light beam during experimental exposure, and adjusting the exposure time of each lithographic area in real time accordingto the change of the intensity of the stray lights to compensate for the exposure dose in order to keep the exposure dose constant in the XIL large-area exposure pattern splicing process, ensure thatthe nanostructure in the finally obtained large-area exposure pattern is uniform and effectively improve the performances of a device formed by the exposure pattern.

Description

technical field [0001] The invention relates to an in-situ luminous flux monitoring and exposure dose compensation method. Background technique [0002] X-ray interference lithography (XIL) is a new type of advanced micro-nano-processing technology that uses the interference fringes of two or more coherent X-beams to expose photoresists, and can carry out nanostructure processing of tens or even dozens of nanometer periods . XIL technology is suitable for the preparation of large-area nano-periodic structures with a period of less than 100nm. Compared with other methods such as photolithography, it can more reliably obtain high-quality sub-50nm high-density periodic nanostructures. It is used in nanoelectronics, micro-nano It has a wide range of applications in the research fields of optics, nanobiology, nanodevices and materials, and photonic crystals. [0003] For a single exposure, the area of ​​the exposure pattern obtained by XIL technology is related to the area of ​...

AI Technical Summary

Problems solved by technology

If the exposure dose (exposure dose=luminous flux*exposure time) between each region is different during the exposure process, the nanostructure between each region will be uneven, resulting in the inhomogeneity of the nanostructure in the finally obtained large-area pattern, After this pattern is developed into a device, the performance of the device will be affected

[0006] In the actual exposure process, the luminous flux is often difficult to keep constant for a long time, which is caused by many reasons: First, although Shanghai Light Source is now operating in constant current mode, the electron beam current in the storage ring is not constant change, but after continuous attenuation and re-inject

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