Light-emitting diode epitaxial wafer and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of increased heat generation of LED chips, decreased LED luminous efficiency, etc., and achieves increased potential barrier height, large interface lattice mismatch, Improve the effect of light efficiency

Active Publication Date: 2018-09-18
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since the mobility of electrons is much higher than that of holes, electrons can quickly enter the multi-quantum well layer, and cross the multi-quantum well layer and undergo non-radiative recombination with holes in the P-type layer, which leads to an increase in the heat generation of the LED chip. Decreased light effect

Method used

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  • Light-emitting diode epitaxial wafer and manufacturing method thereof
  • Light-emitting diode epitaxial wafer and manufacturing method thereof
  • Light-emitting diode epitaxial wafer and manufacturing method thereof

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Embodiment 1

[0031] The embodiment of the present invention provides a light emitting diode epitaxial wafer, figure 1 It is a schematic diagram of the structure of a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, such as figure 1 As shown, the light emitting diode epitaxial wafer includes a substrate 1, and a buffer layer 2, an undoped GaN layer 3, an N-type layer 4, a multiple quantum well layer 5, and a P-type doped layer 6 laminated on the substrate 1 in sequence. 和P-type contact layer7.

[0032] The P-type doped layer 6 includes at least one laminated structure, and each laminated structure includes a first sublayer 61 and a second sublayer 62 stacked in sequence, and the first sublayer 61 is Mg-doped Al x Ga 1-x N layer, 0y Ga 1-y N layer, 0

[0033] figure 1 The shown P-type doped layer 6 includes a laminated structure, figure 2 Is a schematic structural diagram of another light-emitting diode epitaxial wafer provided by an embodiment of the...

Embodiment 2

[0053] The embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer for manufacturing the light-emitting diode epitaxial wafer provided in the first embodiment. image 3 It is a method flowchart of a method for manufacturing a light-emitting diode epitaxial wafer provided by an embodiment of the present invention, such as image 3 As shown, the manufacturing method includes:

[0054] Step 201: Provide a substrate.

[0055] Optionally, the substrate is sapphire.

[0056] In this embodiment, a Veeco K465i or C4 MOCVD (Metal Organic Chemical Vapor Deposition) device can be used to implement the LED growth method. Using high purity H 2 (Hydrogen) or high purity N 2 (Nitrogen) or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source, trimethylindium (TMIn) is used as the indium source, silane (SiH4) is used as t...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type layer, a multiple quantum well layer, a P-type doping layer and a P-type contact layer which are laminated on the substrate in sequence, wherein the P-type doping layer comprises at least one laminated structure; when the P-type doping layer comprises a plurality of laminated structures, the laminated structures are arranged ina laminated manner in sequence, each laminated structure comprises a first sub-layer and a second sub-layer which are arranged in the laminated manner in sequence, each first sub-layer is an Mg-dopedAlxGa1-xN layer, x is greater than 0 and smaller than or equal to 0.3, each second sub-layer is an Mg-doped InyGa1-yN layer, and y is greater than 0 and smaller than or equal to 0.2. The P-type dopinglayer can block electrons from moving towards a P-type layer, and simultaneously effective injection of holes is improved, so that the electrons and the holes give out light compositely through the radiation on the multiple quantum well layer, and then the lighting effect of an LED is improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, it is being rapidly and widely used, such as traffic signal lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate, an undoped GaN layer, an N-type layer, a multiple quantum well layer, and a P-type Layer and P-type contact layer. Among them, the N-type layer is doped with Si to provide electrons; the P-type layer is doped with Mg to provide holes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/24H01L33/06H01L33/00
CPCH01L33/005H01L33/06H01L33/24
Inventor 丁杰秦双娇胡任浩
Owner HC SEMITEK ZHEJIANG CO LTD
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