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Abrasive for grinding and polishing of tellurium-zinc-cadmium soft and crispy wafers

An abrasive, cadmium zinc telluride technology, applied in the field of abrasives, can solve problems affecting the application of polishing fluid, polishing fluid instability, failure, etc., to achieve the effect of fast material removal rate, shortened processing time, and low damage

Inactive Publication Date: 2018-09-28
镇江爱豪科思电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the chemical mechanical polishing of semiconductor wafers usually needs to be carried out in a strong acid and strong alkali environment. Inorganic particles such as silica sol are easy to react with strong acid and strong alkali, which can easily lead to instability or even failure of the polishing solution.
These disadvantages have seriously affected the application of polishing fluid in the precision polishing of soft and brittle semiconductor wafers such as CZT

Method used

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  • Abrasive for grinding and polishing of tellurium-zinc-cadmium soft and crispy wafers
  • Abrasive for grinding and polishing of tellurium-zinc-cadmium soft and crispy wafers
  • Abrasive for grinding and polishing of tellurium-zinc-cadmium soft and crispy wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Choose 1# regular sheet-like abrasive, the shape of the particles see figure 1 . The main experimental steps are:

[0027] (1) Preparation of grinding liquid: using deionized water as a solvent to prepare grinding liquid, adjusting the pH of the suspension to 9, adding ammonium polyacrylate dispersant with a mass fraction of 0.8%, and stirring for 5 minutes before use.

[0028] (2) Wafer grinding: use the Logitech-PM5 precision polishing machine imported from the UK to mechanically grind the wafer, using a 4-inch grinding head, a flat glass experimental grinding disc, the grinding disc speed is 10RPM, the grinding pressure is 19N, the grinding time is 5min, and the grinding liquid The flow rate is appropriate to ensure that the liquid fully wets the grinding disc.

[0029] (3) Observation of wafer surface morphology: OLYMPUS-BX51 optical microscope was used to observe the macroscopic morphology of wafer surface after grinding.

[0030] The macroscopic morphology of t...

Embodiment 2

[0032] Use 2# regular thin plate abrasive, particle size D 50 It is 4.94μm, and its particle shape is shown in image 3 . The main experimental steps are:

[0033] (1) Preparation of grinding liquid: prepare grinding liquid with deionized water as solvent, adjust the pH of the suspension to 4, add polyethylene glycol dispersant with a mass fraction of 1%, and stir for 5 minutes before use.

[0034] (2) Wafer grinding: use the Logitech-PM5 precision polishing machine imported from the UK to mechanically grind the wafer, using a 4-inch grinding head, a flat glass experimental grinding disc, the grinding disc speed is 10RPM, the grinding pressure is 19N, the grinding time is 5min, and the grinding liquid The flow rate is appropriate to ensure that the liquid fully wets the grinding disc.

[0035] (3) Observation of wafer surface morphology: OLYMPUS-BX51 optical microscope was used to observe the macroscopic morphology of wafer surface after grinding.

[0036] The macroscopic ...

Embodiment 3

[0038] Choose 3# regular thick plate abrasive, the particle morphology is shown in Figure 5 . The main experimental steps are:

[0039] (1) Preparation of grinding liquid: use deionized water as a solvent to prepare grinding liquid, adjust the pH of the suspension to 9, add PBTCA dispersant with a mass fraction of 0.7%, stir for 5 minutes before use.

[0040] (2) Wafer grinding: use the Logitech-PM5 precision polishing machine imported from the UK to mechanically grind the wafer, using a 4-inch grinding head, a flat glass experimental grinding disc, the grinding disc speed is 10RPM, the grinding pressure is 19N, the grinding time is 5min, and the grinding liquid The flow rate is appropriate to ensure that the liquid fully wets the grinding disc.

[0041] (3) Observation of wafer surface morphology: OLYMPUS-BX51 optical microscope was used to observe the macroscopic morphology of wafer surface after grinding.

[0042] The macroscopic morphology of the wafer surface after gr...

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Abstract

The invention brings forward an abrasive for grinding and polishing of tellurium-zinc-cadmium soft and crispy wafers. The crystal form of the abrasive is alpha-alumina, and particle shape is regular plate-like; particle size D50 is 2-9 microns, D90 is no higher than 10 microns, D10 is no lower than 1.5 microns, and plate thickness is 0.9-2.2 microns; and the abrasive will not be settled or flocculated in a suspension. In particular the abrasive has strong chemical stability, is suitable for a strong acid and strong alkali environment, is greatly suitable for precision grinding and polishing process of tellurium-zinc-cadmium soft and crispy wafers, is not easy to insert wafers, is not easy to cause scratches, and has high removal rate.

Description

technical field [0001] The invention relates to an abrasive used in the grinding and polishing process, in particular to an abrasive based on flaky alumina powder and suitable for the grinding and polishing of soft and brittle wafers such as cadmium zinc telluride, belonging to inorganic non-metallic and wafer The field of surface polishing technology. Background technique [0002] Cadmium zinc telluride (CZT) crystal is a typical soft and brittle material with sphalerite structure. As a semiconductor material, CZT is often used as a substrate for epitaxial HgCdTe films, and it is also the material of choice for room temperature nuclear radiation detectors. If there is a damaged layer on the wafer surface after the CZT ingot is cut, the lattice periodicity in the damaged layer on the surface It will be severely damaged, thereby forming a space charge region, causing surface leakage current, and ultimately affecting the CZT electrode contact and device performance; at the sa...

Claims

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Application Information

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IPC IPC(8): C09K3/14
CPCC09K3/1454
Inventor 黄颖璞毛晓辰
Owner 镇江爱豪科思电子科技有限公司
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