Microwave power sensor based on solid support beam pressure-resistance effect
A technology of microwave power and piezoresistive effect, which is applied in the direction of electric power measurement by applying the square-law characteristics of circuit components, can solve the problems of small pull-down amplitude of clamped beams, complex connection circuits, and great influence on sensitivity and measurement accuracy. Achieve the effect of increasing measurement accuracy, high measurement accuracy, and good research and application value
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[0020] In order to deepen the understanding of the present invention, the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, which are only used to explain the present invention and do not limit the protection scope of the present invention.
[0021] Such as Figure 1-3 As shown, the present invention is a microwave power sensor based on the piezoresistive effect of a fixed-supported beam. The sensor includes a high-resistance silicon substrate 1 on which a coplanar waveguide transmission line, a fixed-supported Beam 5, the fixed support beam 5 is a fixed support beam made of weakly doped single crystal silicon or single crystal germanium, the coplanar waveguide transmission line includes CPW signal line 3 and CPW ground line 2, and the CPW signal line There are CPW ground wires 2 on both sides of 3, and fixed beam bridge piers 4 are respectively arranged between the CPW ground wire 2 and the CPW signal li...
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