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Microwave power sensor based on solid support beam pressure-resistance effect

A technology of microwave power and piezoresistive effect, which is applied in the direction of electric power measurement by applying the square-law characteristics of circuit components, can solve the problems of small pull-down amplitude of clamped beams, complex connection circuits, and great influence on sensitivity and measurement accuracy. Achieve the effect of increasing measurement accuracy, high measurement accuracy, and good research and application value

Active Publication Date: 2018-09-28
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

However, the output of the capacitive microwave power sensor is nonlinear, its parasitic capacitance and distributed capacitance have a great influence on the sensitivity and measurement accuracy, the connection circuit is more complicated, and the pull-down range of the fixed beam is small.

Method used

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  • Microwave power sensor based on solid support beam pressure-resistance effect
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Embodiment Construction

[0020] In order to deepen the understanding of the present invention, the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, which are only used to explain the present invention and do not limit the protection scope of the present invention.

[0021] Such as Figure 1-3 As shown, the present invention is a microwave power sensor based on the piezoresistive effect of a fixed-supported beam. The sensor includes a high-resistance silicon substrate 1 on which a coplanar waveguide transmission line, a fixed-supported Beam 5, the fixed support beam 5 is a fixed support beam made of weakly doped single crystal silicon or single crystal germanium, the coplanar waveguide transmission line includes CPW signal line 3 and CPW ground line 2, and the CPW signal line There are CPW ground wires 2 on both sides of 3, and fixed beam bridge piers 4 are respectively arranged between the CPW ground wire 2 and the CPW signal li...

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Abstract

The invention relates to a microwave power sensor based on a solid support beam pressure resistance effect, which comprises a high-resistance silicon substrate, a coplanar waveguide transmission lineand a fixed beam are arranged on the high resistance silicon substrate; the coplanar waveguide transmission line includes a CPW signal line and a CPW ground line, and a fixed support beam bridge pieris arranged between the CPW ground wire and the CPW signal line, the two ends of the fixed support beam are respectively fixed above the CPW signal line through a fixed support beam bridge pier, two ends of the fixed support beam are connected with the high-resistance silicon substrate through a fixed support beam bridge pier, and right above the CPW signal line, the upper surface and lower surfaces of the fixed support beam is provided with a metal mass block. When the microwave power sensor is working, the deformation of the fixed beam causes the surface stress of the fixed beam to change, and the value of the diffusion resistance changes. The voltage change between the nodes is measured by the Huygens bridge method. The microwave power value can be directly measured. The microwave powersensor has the advantages of novel structure, easy integration, wide measurement range and high measurement precision.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems, in particular to a microwave power sensor based on the piezoresistive effect of a fixed beam. Background technique [0002] In the research of radio frequency microelectromechanical systems (RF MEMS), the power of microwave signals is an important parameter to characterize microwave signals. The detection of microwave power is applied to the generation, transmission and reception of microwave signals. The most common microwave signal power sensor is a capacitive microwave power sensor based on a fixed beam structure, such as a MEMS fixed beam online microwave power sensor and its Preparation method (patent number: 201010223810.5), microwave detection system and detection method based on fixed beam and direct power sensor (patent number: 201310027303.8). The working principle of this type of microwave power sensor is: when the microwave signal passes through the coplanar w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R21/10
CPCG01R21/10
Inventor 张焕卿宁楠楠陆颢瓒王德波
Owner NANJING UNIV OF POSTS & TELECOMM
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