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Design method of efficient photocathode based on n-type monocrystal Si

A design method and photocathode technology, which are applied in the manufacture of light-emitting cathodes, photo-emission cathodes, main electrodes of discharge tubes, etc., can solve problems such as unfavorable photoelectric conversion efficiency of Si photocathodes, and achieve long service life, improved photocurrent density, and stable Sex-enhancing effects

Active Publication Date: 2018-09-28
SUZHOU UNIV
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Problems solved by technology

However, the protective layer and catalyst on the surface will absorb part of the sunlight, making the Si photocathode absorb less sunlight, which is not conducive to the improvement of the photoelectric conversion efficiency of the Si photocathode.

Method used

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Embodiment 1

[0023] Design of High Efficiency Photocathode Based on n-type Single Crystal Si

[0024] S1. get the n-type single-crystal Si slice that size is 2 inches, adopt 3L mass percent concentration to be that the potassium hydroxide solution of 2% carries out texturing to the positive and negative sides of n-type single-crystal Si slice, through and in the texturing process The temperature controller connected to the heater controls the temperature at 80° C., controls the reaction time at 30 minutes, and cleans the textured surface.

[0025] S2. Using high temperature annealing method in the annealing furnace at p + The emitter is doped with boron element, in n + Phosphorus is doped on the emitter, specifically: by spin-coating a colloidal solution containing boron and phosphorus, and then heating to achieve doping, the colloidal solution is purchased from Futurrex, the specific model is: boron BDC1-2500, phosphorus PDC5-2500, annealed The temperature is 950°C, the annealing time i...

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Abstract

The invention discloses a design method of efficient photocathode based on n-type monocrystal Si. The design method is characterized by comprising the following steps: S1, providing a n-type monocrystal Si wafer, texturing the front face and the back face of the n-type monocrystal Si wafer, and cleaning the etched surfaces; S2, manufacturing a boron-doped p+ emitter on the front of the textured n-type monocrystal Si wafer, and manufacturing a phosphor-doped n+ emitter on the back surface, etching the edge of the Si wafer, and cleaning; S3, orderly depositing Al2O3 and ITO film layers on the boron-doped p+ emitter surface in the step S2; and S4, orderly depositing the Al2O3 film layer, Ti and Pt metal layers on the phosphor-doped n+ emitter surface in the step S2. Through the design methodof efficient photocathode based on n-type monocrystal Si disclosed by the invention, the photocurrent density of the Si photocathode is obviously improved, the high photolysis of water efficiency is provided, the stability is enhanced, and the service life is long.

Description

technical field [0001] The invention relates to the technical field of photoelectrochemical cells, in particular to a design method for an efficient photocathode based on n-type single crystal Si. Background technique [0002] With the increasing global energy demand, the development of renewable energy technology is of great significance to the continuation of social and economic development. Hydrogen is also considered to be a "zero-emission" efficient and clean energy, and it has great potential to replace traditional fossil fuels. At present, most of the industrially produced hydrogen is realized through the steam reformation of fossil fuels such as coal and natural gas, which has high production costs and carbon emissions associated with the production process. While solar photoelectrochemical (PEC) water splitting is a carbon-free alternative, photo-semiconductor materials (photoanodes) are able to absorb renewable and clean solar energy, convert it and store it into ...

Claims

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Application Information

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IPC IPC(8): H01J1/34H01J9/12
CPCH01J1/34H01J9/12
Inventor 范荣磊沈明荣董雯黄冠平
Owner SUZHOU UNIV
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