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Efficient and stable silicon-based photo-splitting water hydrogen production electrode and its preparation method and application

A photo-splitting water hydrogen production and stable technology, applied in the direction of electrodes, electrolysis components, electrolysis process, etc., can solve the problems of insufficient photo-generated voltage and instability of single crystal silicon photocathode, and achieve the improvement of photo-splitting water hydrogen production activity, enhanced The effect of stability and simple operation process

Active Publication Date: 2021-02-02
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention aims to solve the problems of insufficient photogenerated voltage and instability in the solution of single crystal silicon photocathode, and at the same time replace complex, expensive and high energy-consuming pn + , MIS preparation process, chemical bath deposition of cadmium sulfide layer on the silicon electrode to form a heterojunction to improve the photogenerated voltage, titanium oxide material as the outer protective layer, improve its stability, and achieve good photoelectric catalytic performance after loading platinum additives

Method used

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  • Efficient and stable silicon-based photo-splitting water hydrogen production electrode and its preparation method and application
  • Efficient and stable silicon-based photo-splitting water hydrogen production electrode and its preparation method and application
  • Efficient and stable silicon-based photo-splitting water hydrogen production electrode and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Silicon wafer cleaning

[0047] Cut the p-Si finished product into several small squares of 2cm×2cm.

[0048] a) Piranha solution at 85°C (V 浓硫酸 :V 浓过氧化氢 =3:1) for 10min, rinse with deionized water, N 2 Blow dry to remove organic pollutants on the surface of the Si wafer;

[0049] b) Soak the silicon wafer in an aqueous solution of 1% HF by volume in turn for 2 minutes, rinse with deionized water, N 2 Blow dry, this step can remove SiO 2 and accompanying metal;

[0050] c) In order to further thoroughly remove the organic matter and heavy metals on the Si sheet, soak the Si sheet in the RCAII solution at 75°C (V 浓过氧化氢 :V 浓盐酸 :V 水 =1:1:6) for 15min, rinse with deionized water, N 2 Blow dry and set aside.

[0051] (2) Preparation of cadmium sulfide layer

[0052] a) Precursor solution preparation: take 0.625g cadmium sulfate (CdSO 4 ), dissolved in 20mL of deionized water, that is, the concentration of cadmium sulfate is 0.015mol / L, 1.1418g thiourea is dis...

Embodiment 2

[0060] (1) Silicon wafer cleaning

[0061] a) with embodiment 1;

[0062] b) Soak the silicon wafer in 1% HF solution with a volume concentration of 1% for 1 min, rinse with deionized water, N 2 Blow dry, this step can remove SiO 2 and accompanying metal.

[0063] c) with embodiment 1;

[0064] (2) the preparation of cadmium sulfide layer is with embodiment 1;

[0065] (3) The preparation of protective layer is with embodiment 1;

[0066] (4) The deposition of platinum auxiliary agent is the same as that in Example 1.

Embodiment 3

[0068] (1) Silicon wafer cleaning

[0069]a) with embodiment 1;

[0070] b) Soak the silicon wafers in 1% HF solution with a volume concentration of 1% for 3 minutes, rinse with deionized water, N 2 Blow dry, this step can remove SiO 2 and accompanying metal.

[0071] c) with embodiment 1;

[0072] (2) the preparation of cadmium sulfide layer is with embodiment 1;

[0073] (3) The preparation of protective layer is with embodiment 1;

[0074] (4) The deposition of platinum auxiliary agent is the same as that in Example 1.

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Abstract

The invention discloses an efficient and stable silicon-based photolysis water hydrogen production electrode and its preparation method and application, including a p-type silicon substrate, a cadmium sulfide heterojunction layer, a titanium oxide protective layer, and a platinum promoter; the preparation method mainly consists of a silicon substrate It consists of four steps: surface cleaning, cadmium sulfide layer deposition, titanium oxide layer deposition, and platinum additive loading. The invention effectively realizes the preparation of the heterojunction of silicon and cadmium sulfide, improves the photogenerated voltage, solves the problem that the silicon-based photocathode is unstable in aqueous solution, and improves the stability of the material. The preparation method of the invention has simple operation process, strong controllability, stable photoelectric catalytic performance and good repeatability.

Description

technical field [0001] The invention relates to the field of semiconductor electrodes of photoelectrochemical cells, specifically a novel composite silicon electrode (p-Si / CdS / TiO 2 / Pt) structure design and preparation method. Background technique [0002] Photocatalytic water splitting hydrogen production technology can effectively convert solar energy into hydrogen energy, which is one of the important ways to solve energy crisis and environmental problems. Si has excellent light absorption ability (wavelength less than 930nm) and charge transfer ability (1600 and 400cm for electrons and holes, respectively 2 the s -1 V -1 ), under the condition of full spectrum and no sacrificial agent, a series of breakthroughs have been made in the photolysis of water by Si electrode, which has attracted widespread attention in the industry. [1] . Moreover, Si, as an element second only to oxygen in the earth's crust, is relatively cheap. However, due to the small photogenerated ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/054C25B11/081C25B11/059C25B1/04C23C28/04C23C18/12C23C16/455C23C16/40
CPCC23C16/405C23C16/45525C23C18/1204C23C28/042C25B1/04C25B1/55C25B11/051C25B11/059C25B11/093Y02E60/36
Inventor 巩金龙刘珊珊王拓罗志斌李澄澄李慧敏陈梦馨
Owner TIANJIN UNIV
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