34results about How to "Improve photolysis water efficiency" patented technology

The invention discloses a cadmium sulfide (CdS) quantum dot sensitized branching titanium dioxide (TiO2) nanorod array electrode and a preparation method and the usage of the electrode; a TiO2 nanorod used for forming a TiO2 nanorod array comprises a main nanorod; a branching structure is densely distributed on the surface of the main nanorod; CdS quantum dots are evenly loaded on the surface of the branching structure; and the preparation method comprises three steps including preparation of the TiO2 nanorod array, preparation of a branching TiO2 nanorod array and preparation of a CdS quantum dot sensitized branching TiO2 nanorod array. The invention effectively inhibits the compounding of electron-hole pairs, improves the water photolysis efficiency of material, expands the light absorption range of the material into the visible region, improves the water photolysis hydrogen production activity of a photo-electrochemical cell, and improves the light corrosion performance of the CdS quantum dots, thus greatly improving the stability of the material. The invention is simple in operation process, high in controllability, stable in photoelectric catalysis performance and good in repeatability.

The invention discloses a 3D branch semiconductor nano heterojunction photoelectrode material and a preparing method thereof. The heterojunction photoelectrode material is compounded by CuO and ZnO, and is in a 3D branch structure. In the method, ZnO branch nanobars are synthesized on the CuO nanobars, a branch nano structure is realized, and a 3D branch semiconductor nano heterojunction photocathode is prepared, which effectively increases absorption for sunlight, thereby accelerating effective separation of an electron hole pair, further reducing composition thereof, promoting charge transmission, optimizing photoelectric conversion efficiency of a traditional single semiconductor electrode, and improving photolysis efficiency of water; in addition, the material has advantages of environment friendliness and low cost, and has good application prospect.

The invention discloses a zinc oxide nanopencil array electrode and a preparation method and application thereof. According to the zinc oxide nanopencil array electrode, ZnO needle-like tips are grown on the tips of ZnO trunk nanorods; the preparation method comprises three steps, i.e. preparation of a ZnO seed layer, preparation of a ZnO nanorod array and preparation of a ZnO nanopencil array. A liquid phase synthesis method is adopted by the zinc oxide nanopencil array electrode, conditions are mild, operation is easy, and the cost is low; the ZnO nanopencil structure can increase the density of photoinduced electron-hole pairs and the intensity of photoinduced current, the photocurrent density is 1.14mA/cm<2> when applied voltage is 1V vs Ag/AgCl, and is two times higher than the photocurrent density of ZnO nanorods with the same size, so that the photocatalytic water splitting efficiency of the material is increased, and therefore the ZnO nanopencils can be applied in the field of hydrogen production by photocatalytic water splitting in photoelectrochemical cells as photoelectric anode material.

The invention provides a titanium-phosphorus-codoped ferric oxide photoelectrode and a preparation method thereof and belongs to the field of nanometer materials. The method includes the following steps that fluorine-doped tin oxide (FTO) conducting glass is cleaned, titanium inorganic salt and phosphoric acid are evenly dispersed into deionized water, and a precursor solution is acquired; the cleaned FTO conducting glass is put into a reacting still containing the precursor solution, and reaction is conducted at the temperature of 95-105 DEG C for 3-5 hours, so that titanium and phosphorus co-modified FTO conducting glass is prepared; the titanium and phosphorus co-modified FTO conducting glass is put into a reacting still containing an aqueous solution of iron inorganic salt and mineralizer, and reaction is conducted at the temperature of 90-100 DEG C for 3-5 hours; the titanium and phosphorus co-modified FTO conducting glass is taken out after the reaction, annealing is conducted at the temperature of 500-600 DEG C for 1-3 hours, and then annealing is conducted at the temperature of 700-800 DEG C for 10-30 min, so that the titanium-phosphorus-codoped ferric oxide photoelectrode is prepared. According to the scheme, metal and nonmetal are codoped into alpha-Fe2O3 so as to greatly improve the property of water photolysis.

The invention discloses a tantalum nitride nanotube array electrode and a preparation method thereof. The electrode comprises a tantalum nitride (Ta3N5) nanotube array on a tantalum (Ta) substrate. The preparation method comprises three steps, namely, primary anodic oxidation, secondary anodic oxidation and nitriding roasting treatment. Compounding of electron-hole pairs is effectively inhibited, the water photolysis efficiency of a material is improved, the connection state of the nanotube array and the substrate is remarkably improved, and the hydrogen production activity of water photolysis of a photoelectrochemistry pond is improved. The preparation method disclosed by the invention is simple in operation process, high in controllability, stable in photoelectrocatalysis and good in repeatability.

The invention discloses a preparation method and application of a carbon nitride ultrathin heterojunction. The method comprises the following steps: carrying out ultrasonic treatment and stirring on negatively-charged ultrathin hydrogen production g-C3N4 in a hydrochloric acid aqueous solution to enhance the dispersity of g-C3N4, wherein the g-C3N4 molecules contain rich -C-N-structures, so that the g-C3N4 molecules can be easily protonated by hydrochloric acid so as to be positively charged; and then carrying out ultrasonic treatment and stirring on the obtained positively-charged ultrathin hydrogen production g-C3N4 and negatively-charged ultrathin oxygen production g-C3N4 in a water phase environment, wherein the positively-charged ultrathin hydrogen production g-C3N4 and the negatively-charged ultrathin oxygen production g-C3N4 can be effectively assembled by utilizing the principle that positive charges and negative charges attract each other, so that the effective combination ofthe hydrogen production semiconductor and the oxygen production semiconductor is achieved so as to successfully construct the ultrathin g-C3N4 heterojunction for photolysis of water. According to theinvention, the obtained ultrathin g-C3N4 heterojunction is excellent in water photolysis performance and good in dispersity and can be stably stored; and the method is simple, high in controllability,good in repeatability, cheap in raw materials, wide in source, safe and environmentally friendly, the production efficiency is improved, the production cost is reduced, and the method is suitable forlarge-scale production.

The invention relates to a space power, energy and life support integrated system and method, and aims to solve the problems of large space load, low resource utilization rate and low system reliability due to the fact that space power, energy and life support systems are independent and low in integration level in the prior art. The system comprises a water storage tank, a gas hydrogen storage tank, a gas oxygen storage tank, a water photolysis unit, a hydrogen-oxygen-water conversion unit and a power supply management unit. The water photolysis unit performs water photolysis reaction by utilizing illumination and water in the water storage tank to generate hydrogen and oxygen, and the hydrogen and the oxygen are respectively stored in the gas hydrogen storage tank and the gas oxygen storage tank; the hydrogen-oxygen-water conversion unit is a split type hydrogen-oxygen fuel cell and a water electrolysis device, or an integrated renewable fuel cell and is used for converting hydrogen and oxygen into water for power generation and electrolyzing water to generate hydrogen and oxygen; the power management unit is used for power storage and power supply management.

The invention relates to a semiconductor composite heterojunction photoelectrode manufacturing method. A zinc oxide thin film with a thickness of 10 to 60 nm is deposited on a conductive base loaded with a bismuth vanadate nano thin film, and a zinc source and an oxygen source react under 150 to 200 DEG C to obtain the zinc oxide thin film; the conductive base after being processed is put to a copper salt aqueous solution, a replacement reaction is carried out under 60 to 100 DEG C, zinc oxide is converted into copper oxide, annealing is then carried out under 350 to 550 DEG C, and a conductive base loaded with a bismuth vanadate and copper oxide heterojunction is formed; and a titanium oxide thin film is deposited on the surface of the conductive base loaded with the bismuth vanadate andcopper oxide heterojunction, and a titanium source and an oxygen source react under 80 to 150 DEG C to obtain the titanium oxide thin film. The heterojunction has a petal-shaped appearance, the specific surface area of the electrode is increased, the loaded TiO2 is used as a promoter, a reaction between a hole and an electrolyte is promoted, and the water splitting efficiency is improved effectively.

The invention specifically relates to a preparation method for a hematite nanorod array photoanode modified by lead zirconate titanate, belonging to the field of photoelectric materials and catalysis.The preparation method comprises the following steps: S1, preparing an alpha-Fe2O3 growth-promoting solution which comprises a ferric iron salt and an auxiliary agent, wherein the concentration of Fe<3+> in the growth-promoting solution is 0.15-0.3 M, and the auxiliary agent is sodium nitrate or urea; S2, immersing a conductive substrate in the growth-promoting solution, and carrying out a reaction at 95-100 DEG C for 4-12 h; S3, preparing a lead zirconate titanate precursor solution; S4, coating the conductive substrate treated in the step S2 with the precursor solution prepared in the stepS3 in a spin-coating manner; and S5, calcining the conductive substrate having undergone spin coating in the step S4. The photoanode prepared in the invention overcomes the problem of fast photo-induced electron hole recombination of hematite, is improved in photocatalytic performance and stability, and can be better applied to catalytic hydrogen production.