The invention discloses a preparation method and application of a
carbon nitride ultrathin
heterojunction. The method comprises the following steps: carrying out ultrasonic treatment and stirring on negatively-charged ultrathin
hydrogen production g-C3N4 in a
hydrochloric acid aqueous solution to enhance the
dispersity of g-C3N4, wherein the g-C3N4 molecules contain rich -C-N-structures, so that the g-C3N4 molecules can be easily protonated by
hydrochloric acid so as to be positively charged; and then carrying out ultrasonic treatment and stirring on the obtained positively-charged ultrathin
hydrogen production g-C3N4 and negatively-charged ultrathin
oxygen production g-C3N4 in a water phase environment, wherein the positively-charged ultrathin
hydrogen production g-C3N4 and the negatively-charged ultrathin
oxygen production g-C3N4 can be effectively assembled by utilizing the principle that positive charges and negative charges attract each other, so that the effective combination ofthe
hydrogen production semiconductor and the
oxygen production
semiconductor is achieved so as to successfully construct the ultrathin g-C3N4
heterojunction for photolysis of water. According to theinvention, the obtained ultrathin g-C3N4
heterojunction is excellent in water photolysis performance and good in
dispersity and can be stably stored; and the method is simple, high in
controllability,good in
repeatability, cheap in raw materials, wide in source, safe and
environmentally friendly, the production efficiency is improved, the production cost is reduced, and the method is suitable forlarge-scale production.