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34results about How to "Improve photolysis water efficiency" patented technology

Cadmium sulfide (CdS) quantum dot sensitized branching titanium dioxide (TiO2) nanorod array electrode and preparation method and usage thereof

The invention discloses a cadmium sulfide (CdS) quantum dot sensitized branching titanium dioxide (TiO2) nanorod array electrode and a preparation method and the usage of the electrode; a TiO2 nanorod used for forming a TiO2 nanorod array comprises a main nanorod; a branching structure is densely distributed on the surface of the main nanorod; CdS quantum dots are evenly loaded on the surface of the branching structure; and the preparation method comprises three steps including preparation of the TiO2 nanorod array, preparation of a branching TiO2 nanorod array and preparation of a CdS quantum dot sensitized branching TiO2 nanorod array. The invention effectively inhibits the compounding of electron-hole pairs, improves the water photolysis efficiency of material, expands the light absorption range of the material into the visible region, improves the water photolysis hydrogen production activity of a photo-electrochemical cell, and improves the light corrosion performance of the CdS quantum dots, thus greatly improving the stability of the material. The invention is simple in operation process, high in controllability, stable in photoelectric catalysis performance and good in repeatability.
Owner:TIANJIN UNIV

3D branch semiconductor nano heterojunction photoelectrode material and preparing method thereof

The invention discloses a 3D branch semiconductor nano heterojunction photoelectrode material and a preparing method thereof. The heterojunction photoelectrode material is compounded by CuO and ZnO, and is in a 3D branch structure. In the method, ZnO branch nanobars are synthesized on the CuO nanobars, a branch nano structure is realized, and a 3D branch semiconductor nano heterojunction photocathode is prepared, which effectively increases absorption for sunlight, thereby accelerating effective separation of an electron hole pair, further reducing composition thereof, promoting charge transmission, optimizing photoelectric conversion efficiency of a traditional single semiconductor electrode, and improving photolysis efficiency of water; in addition, the material has advantages of environment friendliness and low cost, and has good application prospect.
Owner:SUZHOU UNIV

Preparation method of Z-configuration visible light catalytic decomposing water composite material

The invention relates to a photocatalytic water splitting material, and particularly relates to a Z-configuration visible light catalytic decomposing water composite material and a preparation method thereof. The preparation method comprises the steps of dropwise adding a silver nitrate solution into flower-like molybdenum disulfide dispersion liquid under stirring, and stirring to obtain a mixed precursor solution; weighing and dissolving phosphate into deionized water to obtain a phosphate solution; under stirring, adding a sodium phosphate solution into the prepared mixed precursor solution, enabling the solution to gradually generate greyish-green sediments along with the adding of sodium phosphate, continuously stirring the mixed solution for 3h after dropwise adding, finally washing the reaction sediments with deionized water and ethyl alcohol respectively for three times and vacuum drying. The bent basal plane formed by flower-like molybdenum disulfide can become the main active site of a light-catalyzed reaction, and is stronger than a molybdenum disulfide nanosheet within the absorption range of visible light, and the performance of the composite photocatalyst can be further improved.
Owner:JIANGSU UNIV

Three-dimensional TiO2/ZnO heterojunction array synthesis method

The invention discloses a three-dimensional TiO2 / ZnO heterojunction array synthesis method, which specifically comprises: (1) preparing a TiO2 nano-rod array on an FTO electric conduction glass; (2) soaking the TiO2 nano-rod array in the ethanol solution of zinc acetate and diethanolamine, taking out, and calcining in a muffle furnace to obtain a ZnO seed crystal-covered TiO2 nano-rod array; and (3) immersing the ZnO seed crystal-covered TiO2 nano-rod array in a hydrothermal reaction kettle filled with a zinc nitrate and hexamethylenetetramine mixing aqueous solution, and preparing the three-dimensional TiO2 / ZnO heterojunction array through a hydrothermal reaction. According to the present invention, the three-dimensional dendritic TiO2 / ZnO heterojunction array is synthesized by using the seed crystal soaking and the two-step hydrothermal method, such that the advantages of simple process, convenient operation, cheap and easily-available raw materials and easy promotion and application are provided.
Owner:HENAN NORMAL UNIV

Zinc oxide nanopencil array electrode and preparation method and application thereof

The invention discloses a zinc oxide nanopencil array electrode and a preparation method and application thereof. According to the zinc oxide nanopencil array electrode, ZnO needle-like tips are grown on the tips of ZnO trunk nanorods; the preparation method comprises three steps, i.e. preparation of a ZnO seed layer, preparation of a ZnO nanorod array and preparation of a ZnO nanopencil array. A liquid phase synthesis method is adopted by the zinc oxide nanopencil array electrode, conditions are mild, operation is easy, and the cost is low; the ZnO nanopencil structure can increase the density of photoinduced electron-hole pairs and the intensity of photoinduced current, the photocurrent density is 1.14mA / cm<2> when applied voltage is 1V vs Ag / AgCl, and is two times higher than the photocurrent density of ZnO nanorods with the same size, so that the photocatalytic water splitting efficiency of the material is increased, and therefore the ZnO nanopencils can be applied in the field of hydrogen production by photocatalytic water splitting in photoelectrochemical cells as photoelectric anode material.
Owner:TIANJIN UNIV

Titanium-phosphorus-codoped ferric oxide photoelectrode and preparation method thereof

ActiveCN106400045ASmall surface damageResponse is not affectedElectrodesInorganic saltsPhosphoric acid
The invention provides a titanium-phosphorus-codoped ferric oxide photoelectrode and a preparation method thereof and belongs to the field of nanometer materials. The method includes the following steps that fluorine-doped tin oxide (FTO) conducting glass is cleaned, titanium inorganic salt and phosphoric acid are evenly dispersed into deionized water, and a precursor solution is acquired; the cleaned FTO conducting glass is put into a reacting still containing the precursor solution, and reaction is conducted at the temperature of 95-105 DEG C for 3-5 hours, so that titanium and phosphorus co-modified FTO conducting glass is prepared; the titanium and phosphorus co-modified FTO conducting glass is put into a reacting still containing an aqueous solution of iron inorganic salt and mineralizer, and reaction is conducted at the temperature of 90-100 DEG C for 3-5 hours; the titanium and phosphorus co-modified FTO conducting glass is taken out after the reaction, annealing is conducted at the temperature of 500-600 DEG C for 1-3 hours, and then annealing is conducted at the temperature of 700-800 DEG C for 10-30 min, so that the titanium-phosphorus-codoped ferric oxide photoelectrode is prepared. According to the scheme, metal and nonmetal are codoped into alpha-Fe2O3 so as to greatly improve the property of water photolysis.
Owner:SUZHOU UNIV

Tantalum oxide protected P-type silicon photocatalytic hydrogen evolution electrode and preparation method thereof

ActiveCN109267097AImprove stabilityFacilitate surface reactionEnergy inputElectrodesPtru catalystPhotocathode
The invention discloses a tantalum oxide protected P-type silicon photocatalytic hydrogen evolution electrode and a preparation method thereof, wherein the tantalum oxide protected P-type silicon photocatalytic hydrogen evolution electrode comprises a surface phosphorus heavily doped p-type silicon substrate, a tantalum pentoxide outer protection layer and a platinum co-catalyst. The preparation method mainly comprises three steps of silicon wafer substrate surface heavy doping treatment, tantalum pentoxide outer protection layer depositing and platinum co-catalyst loading. According to the present invention, with the preparation method, the surface heavy doping of the silicon substrate is achieved, the initial potential of the photoelectrochemical cell photocatalytic hydrogen evolution isincreased, the instability of the silicon-based photocathode in the aqueous solution is solved, and the stability of the material is improved; and the preparation method has advantages of simple operation process, strong controllability, stable photoelectrocatalytic performance of the product, and good repeatability.
Owner:TIANJIN UNIV

Tantalum nitride nanotube array electrode and preparation method thereof

The invention discloses a tantalum nitride nanotube array electrode and a preparation method thereof. The electrode comprises a tantalum nitride (Ta3N5) nanotube array on a tantalum (Ta) substrate. The preparation method comprises three steps, namely, primary anodic oxidation, secondary anodic oxidation and nitriding roasting treatment. Compounding of electron-hole pairs is effectively inhibited, the water photolysis efficiency of a material is improved, the connection state of the nanotube array and the substrate is remarkably improved, and the hydrogen production activity of water photolysis of a photoelectrochemistry pond is improved. The preparation method disclosed by the invention is simple in operation process, high in controllability, stable in photoelectrocatalysis and good in repeatability.
Owner:TIANJIN UNIV

Preparation method and application of carbon nitride ultrathin heterojunction

The invention discloses a preparation method and application of a carbon nitride ultrathin heterojunction. The method comprises the following steps: carrying out ultrasonic treatment and stirring on negatively-charged ultrathin hydrogen production g-C3N4 in a hydrochloric acid aqueous solution to enhance the dispersity of g-C3N4, wherein the g-C3N4 molecules contain rich -C-N-structures, so that the g-C3N4 molecules can be easily protonated by hydrochloric acid so as to be positively charged; and then carrying out ultrasonic treatment and stirring on the obtained positively-charged ultrathin hydrogen production g-C3N4 and negatively-charged ultrathin oxygen production g-C3N4 in a water phase environment, wherein the positively-charged ultrathin hydrogen production g-C3N4 and the negatively-charged ultrathin oxygen production g-C3N4 can be effectively assembled by utilizing the principle that positive charges and negative charges attract each other, so that the effective combination ofthe hydrogen production semiconductor and the oxygen production semiconductor is achieved so as to successfully construct the ultrathin g-C3N4 heterojunction for photolysis of water. According to theinvention, the obtained ultrathin g-C3N4 heterojunction is excellent in water photolysis performance and good in dispersity and can be stably stored; and the method is simple, high in controllability,good in repeatability, cheap in raw materials, wide in source, safe and environmentally friendly, the production efficiency is improved, the production cost is reduced, and the method is suitable forlarge-scale production.
Owner:XI AN JIAOTONG UNIV

Annealed Si-based InN nanorod heterojunction and preparation method and application thereof

The invention discloses an annealed Si-based InN nanorod heterojunction as well as a preparation method and application of the annealed Si-based InN nanorod heterojunction. The preparation method comprises the following steps: (1) growing an InN nanorod on a Si substrate by adopting a molecular beam epitaxial growth process; (2) carrying out annealing treatment on the InN nanorod obtained in the step (1) to obtain a Si-based InN nanorod heterojunction; the annealing atmosphere is a sulfur atmosphere, an oxygen atmosphere or a selenium atmosphere under the protection of N2. The InN nanorod heterojunction comprises a substrate and an InN nanorod grown on the substrate, wherein the InN nanorod is annealed in different atmospheres to form the heterojunction. The Si-based InN nanorod heterojunction photoelectrode is prepared by adopting a method which is low in cost and simple in process. The heterojunction photoelectrode can be used for hydrogen production through photoelectrocatalysis water decomposition, the hydrogen production efficiency is greatly improved, and an effective strategy is provided for large-scale preparation of hydrogen energy through solar energy.
Owner:SOUTH CHINA UNIV OF TECH

A zinc oxide nano-pencil array electrode and its preparation method and application

The invention discloses a zinc oxide nanopencil array electrode and a preparation method and application thereof. According to the zinc oxide nanopencil array electrode, ZnO needle-like tips are grown on the tips of ZnO trunk nanorods; the preparation method comprises three steps, i.e. preparation of a ZnO seed layer, preparation of a ZnO nanorod array and preparation of a ZnO nanopencil array. A liquid phase synthesis method is adopted by the zinc oxide nanopencil array electrode, conditions are mild, operation is easy, and the cost is low; the ZnO nanopencil structure can increase the density of photoinduced electron-hole pairs and the intensity of photoinduced current, the photocurrent density is 1.14mA / cm<2> when applied voltage is 1V vs Ag / AgCl, and is two times higher than the photocurrent density of ZnO nanorods with the same size, so that the photocatalytic water splitting efficiency of the material is increased, and therefore the ZnO nanopencils can be applied in the field of hydrogen production by photocatalytic water splitting in photoelectrochemical cells as photoelectric anode material.
Owner:TIANJIN UNIV

Photocatalytic water splitting catalyzing structure and preparation method thereof

The invention relates to the technical field of photocatalysis, and discloses a photocatalytic water splitting catalyzing structure. The photocatalytic water splitting catalyzing structure comprises a substrate, a conductive layer, a photocatalyst layer and covering layers, wherein the conductive layer is positioned on the upper surface of the substrate so as to form a conductive substrate; the photocatalyst layer is positioned on the upper surface of the conductive layer; the covering layers comprise an upper covering layer and a lower covering layer, the upper covering layer is positioned on the upper surface of the photocatalyst layer and covers part of the photocatalyst layer, and the lower covering layer is positioned on the lower surface of the substrate, and covers all the lower surface of the substrate. The invention also discloses a method for preparing the photocatalytic water splitting catalyzing structure. According to the invention, a high-temperature resisting conductive film is prepared on the substrate and can be flexibly applied to substrates of different types; the quantity of elements doped in the transparent conductive film can be accurately controlled; a photocatalyst precursor is synthesized by a hydrothermal method, the cost is relatively low, the operability is high, the pH value is adjusted by hydrochloric acid with proper concentration, and the technical problem that pure alpha-Fe2O3 is low in photocatalytic water splitting efficiency at present is solved.
Owner:SUZHOU UNIV

Space power, energy and life support integrated system and method

The invention relates to a space power, energy and life support integrated system and method, and aims to solve the problems of large space load, low resource utilization rate and low system reliability due to the fact that space power, energy and life support systems are independent and low in integration level in the prior art. The system comprises a water storage tank, a gas hydrogen storage tank, a gas oxygen storage tank, a water photolysis unit, a hydrogen-oxygen-water conversion unit and a power supply management unit. The water photolysis unit performs water photolysis reaction by utilizing illumination and water in the water storage tank to generate hydrogen and oxygen, and the hydrogen and the oxygen are respectively stored in the gas hydrogen storage tank and the gas oxygen storage tank; the hydrogen-oxygen-water conversion unit is a split type hydrogen-oxygen fuel cell and a water electrolysis device, or an integrated renewable fuel cell and is used for converting hydrogen and oxygen into water for power generation and electrolyzing water to generate hydrogen and oxygen; the power management unit is used for power storage and power supply management.
Owner:XIAN AEROSPACE PROPULSION INST

Semiconductor composite heterojunction photoelectrode and manufacturing method thereof

The invention relates to a semiconductor composite heterojunction photoelectrode manufacturing method. A zinc oxide thin film with a thickness of 10 to 60 nm is deposited on a conductive base loaded with a bismuth vanadate nano thin film, and a zinc source and an oxygen source react under 150 to 200 DEG C to obtain the zinc oxide thin film; the conductive base after being processed is put to a copper salt aqueous solution, a replacement reaction is carried out under 60 to 100 DEG C, zinc oxide is converted into copper oxide, annealing is then carried out under 350 to 550 DEG C, and a conductive base loaded with a bismuth vanadate and copper oxide heterojunction is formed; and a titanium oxide thin film is deposited on the surface of the conductive base loaded with the bismuth vanadate andcopper oxide heterojunction, and a titanium source and an oxygen source react under 80 to 150 DEG C to obtain the titanium oxide thin film. The heterojunction has a petal-shaped appearance, the specific surface area of the electrode is increased, the loaded TiO2 is used as a promoter, a reaction between a hole and an electrolyte is promoted, and the water splitting efficiency is improved effectively.
Owner:SUZHOU UNIV

Preparation method for hematite nanorod array photoanode modified by lead zirconate titanate

ActiveCN110359058AImprove efficiencyExcellent stability and photocatalytic hydrogen production performanceElectrodesElectron hole recombinationUrea
The invention specifically relates to a preparation method for a hematite nanorod array photoanode modified by lead zirconate titanate, belonging to the field of photoelectric materials and catalysis.The preparation method comprises the following steps: S1, preparing an alpha-Fe2O3 growth-promoting solution which comprises a ferric iron salt and an auxiliary agent, wherein the concentration of Fe<3+> in the growth-promoting solution is 0.15-0.3 M, and the auxiliary agent is sodium nitrate or urea; S2, immersing a conductive substrate in the growth-promoting solution, and carrying out a reaction at 95-100 DEG C for 4-12 h; S3, preparing a lead zirconate titanate precursor solution; S4, coating the conductive substrate treated in the step S2 with the precursor solution prepared in the stepS3 in a spin-coating manner; and S5, calcining the conductive substrate having undergone spin coating in the step S4. The photoanode prepared in the invention overcomes the problem of fast photo-induced electron hole recombination of hematite, is improved in photocatalytic performance and stability, and can be better applied to catalytic hydrogen production.
Owner:INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV

Semiconductor photoelectrode photocatalytic water splitting reaction device based on black silicon PN knots and manufacturing method thereof

The invention discloses a semiconductor photoelectrode photocatalytic water splitting device based on black silicon PN knots and a manufacturing method thereof, and belongs to a semiconductor photoelectrode manufacturing method and a photocatalytic water splitting reaction device. (1), after the surface of an ordinary P-type monocrystal or polycrystalline silicon wafer is micro-nanocrystallized toform black silicon, the obtained black silicon wafer is placed into a diffusion furnace to be preheated at 750-800 DEG C through a low-temperature low-density source diffusion technique, and O2 withthe flow of 0.1-0.2 L / min is introduced in, so that the surface of the black silicon wafer is slightly oxidized; then POCl3 with the flow of 0.9-1.5 L / min is introduced in, and diffusion is performedfor 30-80 min at 800-870 DEG C, so that uniform black silicon PN knots are formed; finally, phosphorosilicate glass layers on the surfaces of the black silicon PN knots are removed by using hydrofluoric acid. The semiconductor photoelectrode photocatalytic water splitting device has the advantages that solar energy is utilized for driving, so that only a little external force driving is needed; the principle is simple; assembly is easy; cost is low; the reflectivity of the silicon wafer is lowered to 2%-15%, so that utilization of light is improved; and the uniform PN knots are manufactured through the diffusion technique, so that photocatalytic water splitting efficiency of the device is further improved.
Owner:CHINA UNIV OF MINING & TECH

A kind of titanium phosphorus co-doped iron oxide photoelectrode and preparation method thereof

ActiveCN106400045BSmall surface damageResponse is not affectedElectrodesPhosphoric acidNonmetal
The invention provides a titanium-phosphorus co-doped iron oxide photoelectrode and a preparation method thereof, belonging to the field of nanometer materials. The method comprises the following steps: cleaning the FTO conductive glass, uniformly dispersing the inorganic salt of titanium and phosphoric acid in deionized water to prepare a precursor solution; placing the cleaned FTO conductive glass into a reaction kettle filled with the precursor solution , react at 95-105°C for 3-5h to prepare titanium-phosphorus co-modified FTO conductive glass; put the titanium-phosphorus co-modified FTO conductive glass into the inorganic salt containing iron and the reaction of mineralizer aqueous solution In the kettle, react at 90-100°C for 3-5h; take out the titanium-phosphorus co-modified FTO conductive glass after the reaction, anneal at 500-600°C for 1-3h, and then anneal at 700-800°C for 10- 30min, the titanium phosphorus co-doped iron oxide photoelectrode was prepared. The scheme of the present invention can co-dope metals and nonmetals into α-Fe2O3, thereby greatly improving its photolytic water splitting performance.
Owner:SUZHOU UNIV

A photocatalytic structure for splitting water and its manufacturing method

The invention relates to the technical field of photocatalysis, and discloses a photocatalytic water splitting catalyzing structure. The photocatalytic water splitting catalyzing structure comprises a substrate, a conductive layer, a photocatalyst layer and covering layers, wherein the conductive layer is positioned on the upper surface of the substrate so as to form a conductive substrate; the photocatalyst layer is positioned on the upper surface of the conductive layer; the covering layers comprise an upper covering layer and a lower covering layer, the upper covering layer is positioned on the upper surface of the photocatalyst layer and covers part of the photocatalyst layer, and the lower covering layer is positioned on the lower surface of the substrate, and covers all the lower surface of the substrate. The invention also discloses a method for preparing the photocatalytic water splitting catalyzing structure. According to the invention, a high-temperature resisting conductive film is prepared on the substrate and can be flexibly applied to substrates of different types; the quantity of elements doped in the transparent conductive film can be accurately controlled; a photocatalyst precursor is synthesized by a hydrothermal method, the cost is relatively low, the operability is high, the pH value is adjusted by hydrochloric acid with proper concentration, and the technical problem that pure alpha-Fe2O3 is low in photocatalytic water splitting efficiency at present is solved.
Owner:SUZHOU UNIV

Photoelectrode of photoelectrochemical cell and preparing and processing method thereof

The invention discloses a processing method of a photoelectrode of a photoelectrochemical hydrolysis cell. The processing method comprises the steps that a WO3 compact layer is formed between a conducting substrate and a WO3 nano-porous layer in a deposition mode; and the WO3 nano-porous layer is modified by an ammonium metatungstate methanol solution. The magnitude of the photocurrent of a processed photoanode is 19 times that of the photocurrent existing before the photoelectrode is processed. By the adoption of the preparing and processing method of the photoanode, the process is simple, separation and transmission of the electric charge are facilitated, and the electrode performance can be substantially improved. The method is economical and environmentally friendly, and can be appliedto large-scale production and preparation of the photoelectrodes.
Owner:NANJING UNIV OF POSTS & TELECOMM

Preparation method of hematite nanorod array photoanode modified by lead zirconate titanate

The invention belongs to the field of photoelectric materials and catalysis, and in particular relates to a preparation method of a hematite nanorod array photoanode modified by lead zirconate titanate, comprising the following steps: S1. configuring α-Fe 2 o 3 Growth liquid, the growth liquid includes ferric salt and auxiliary agent, Fe in the growth liquid 3+ The concentration is 0.15~0.3M; the auxiliary agent is sodium nitrate or urea; S2. Immerse the conductive substrate in the growth solution, and react for 4~12h at 95~100°C; S3. Configure lead zirconate titanate precursor body solution; S4. spin-coating the precursor solution prepared in step S3 on the conductive substrate after the treatment in step S2; S5. calcining the conductive substrate after the spin-coating in step S4. The photoanode prepared by the invention improves the problem of fast recombination of photogenerated electrons and holes of hematite, improves its photoelectric catalytic performance and stability, and can be better applied to catalytic hydrogen production.
Owner:INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV

ferroelectric composite cu 2 oVisible light photolysis of water to produce hydrogen photocathode and its preparation method

The invention relates to a ferroelectric composite Cu2O visible light water photolysis hydrogen production photocathode and a preparing method thereof. The photocathode is sequentially composed of a BiFeO3 ferroelectric film layer, a gold nano-rod granular layer, a Cu2O film layer and a silicon wafer substrate from top to bottom, and heterojunctions are formed between the Cu2O film layer and the BiFeO3 ferroelectric film layer. According to the ferroelectric composite Cu2O visible light water photolysis hydrogen production photocathode and the preparing method of the photocathode, adverse effects of energy band barriers between the Cu2O film layer and the BiFeO3 ferroelectric film layer are eliminated through gold nano-rod granules by means of the LSPR effect, absorption of visible light with the wave length ranging from 650 nm-750 nm is strengthened, the Cu2O film layer is protected by the BiFeO3 ferroelectric film layer, residual polarization electric fields are used for eliminatingupwarp barriers on photoelectrode / electrolyte interfaces, the water photolysis efficiency and the hydrogen production efficiency are improved, the light current density reaches 91 microampere / cm<2>, and the threshold voltage relative to a reversible hydrogen electrode reaches 1.01 V.
Owner:SUZHOU TAIHU ELECTRIC ADVANCED MATERIAL CO LTD

Preparation method of photoelectrode loaded with zinc-nickel-cobalt basic carbonate

The invention relates to a preparation method for a zinc-nickel-cobalt subcarbonate supported photoelectrode. The preparation method comprises the following steps that a layer of titanium oxide nanorod array is formed on the surface of a conductive substrate; zinc organic salt, nickel organic salt, cobalt organic salt and urea are mixed to be uniform in water, and a mixed solution is obtained; and the treated conductive substrate is immersed into the mixed solution, a reaction occurs at the temperature from 60 DEG C to 90 DEG C, and the zinc-nickel-cobalt subcarbonate supported photoelectrode is obtained. According to the preparation method, the process is simple, raw materials are sufficient, the cost is low, mass production is facilitated, and huge potential application value is achieved. According to the semiconductor photoelectrode prepared through the method, the specific area of the photoelectrode is effectively increased, and the area, making sufficient contact with an electrolyte, of the photoelectrode is increased; and meanwhile, compared with a traditional single-semiconductor electrode, the photoelectrode has the beneficial effects that the introduction of a co-catalyst effectively promotes holes and the electrolyte to react, electron hole pair separation is advantageously improved, and the photocatalytic water splitting efficiency is effectively improved.
Owner:SUZHOU UNIV

3d branched semiconductor nano-heterojunction photoelectrode material and preparation method thereof

The invention discloses a 3D branch semiconductor nano heterojunction photoelectrode material and a preparing method thereof. The heterojunction photoelectrode material is compounded by CuO and ZnO, and is in a 3D branch structure. In the method, ZnO branch nanobars are synthesized on the CuO nanobars, a branch nano structure is realized, and a 3D branch semiconductor nano heterojunction photocathode is prepared, which effectively increases absorption for sunlight, thereby accelerating effective separation of an electron hole pair, further reducing composition thereof, promoting charge transmission, optimizing photoelectric conversion efficiency of a traditional single semiconductor electrode, and improving photolysis efficiency of water; in addition, the material has advantages of environment friendliness and low cost, and has good application prospect.
Owner:SUZHOU UNIV

Efficient and stable silicon-based photo-splitting water hydrogen production electrode and its preparation method and application

The invention discloses an efficient and stable silicon-based photolysis water hydrogen production electrode and its preparation method and application, including a p-type silicon substrate, a cadmium sulfide heterojunction layer, a titanium oxide protective layer, and a platinum promoter; the preparation method mainly consists of a silicon substrate It consists of four steps: surface cleaning, cadmium sulfide layer deposition, titanium oxide layer deposition, and platinum additive loading. The invention effectively realizes the preparation of the heterojunction of silicon and cadmium sulfide, improves the photogenerated voltage, solves the problem that the silicon-based photocathode is unstable in aqueous solution, and improves the stability of the material. The preparation method of the invention has simple operation process, strong controllability, stable photoelectric catalytic performance and good repeatability.
Owner:TIANJIN UNIV

Tantalum oxide-protected p-type silicon photolysis water hydrogen production electrode and preparation method thereof

The invention discloses a p-type silicon photolysis water hydrogen production electrode protected by tantalum oxide and a preparation method thereof, including a p-type silicon substrate heavily doped with phosphorus on the surface, an outer protective layer of tantalum pentoxide and a platinum promoter; Substrate surface heavy doping treatment, tantalum pentoxide protective layer deposition, and platinum auxiliary agent loading are composed of three steps. The invention effectively realizes the heavy doping of the surface of the silicon substrate, improves the starting potential of the photoelectrochemical cell for photolysis of water to produce hydrogen, and improves the stability of the material due to the instability of the silicon-based photocathode in aqueous solution. The preparation method of the invention has simple operation process, strong controllability, stable photoelectric catalytic performance and good repeatability.
Owner:TIANJIN UNIV

Preparation method of nitrogen-doped titanium dioxide nano line electrode

The invention belongs to the technical field of photoelectrodes, which particularly relates to a preparation method of a nitrogen-doped titanium dioxide nano line electrode with visible light absorptivity. Concretely, a TiO2 nano line is prepared by utilizing an anodic oxidation method, is soaked in a hexamethylenetetramine solution, and is heated in a tubular furnace, nitrogen gas is used as carrier gas, and the nitrogen doping process is carried out. The TiO2 nano line is prepared by utilizing the anodic oxidation method, which enhances the specific surface area of TiO2 greatly, enhances the electronic transmission rate, promotes the effective separation of electron holes and reduces the probability of exciton recombination so as to increase the photocatalysis efficiency and the water photolysis efficiency of a photoelectrode; after the TiO2 nano line is doped by utilizing nitrogen, the absorption range of the TiO2 nano line to visible light is enhanced, and the water photolysis efficiency is reinforced; moreover, the process method has simple preparation and low cost, simplifies the execution process of the electrode and is beneficial to large-scale preparation and production; and the material has large application potential in the aspects of a solar battery, water-photolysis hydrogen production, photocatalysis degradation and the like.
Owner:TSINGHUA UNIV

Semiconductor composite heterojunction photoelectrode and preparation method thereof

The invention relates to a semiconductor composite heterojunction photoelectrode manufacturing method. A zinc oxide thin film with a thickness of 10 to 60 nm is deposited on a conductive base loaded with a bismuth vanadate nano thin film, and a zinc source and an oxygen source react under 150 to 200 DEG C to obtain the zinc oxide thin film; the conductive base after being processed is put to a copper salt aqueous solution, a replacement reaction is carried out under 60 to 100 DEG C, zinc oxide is converted into copper oxide, annealing is then carried out under 350 to 550 DEG C, and a conductive base loaded with a bismuth vanadate and copper oxide heterojunction is formed; and a titanium oxide thin film is deposited on the surface of the conductive base loaded with the bismuth vanadate andcopper oxide heterojunction, and a titanium source and an oxygen source react under 80 to 150 DEG C to obtain the titanium oxide thin film. The heterojunction has a petal-shaped appearance, the specific surface area of the electrode is increased, the loaded TiO2 is used as a promoter, a reaction between a hole and an electrolyte is promoted, and the water splitting efficiency is improved effectively.
Owner:SUZHOU UNIV
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