Preparation method and application of carbon nitride ultrathin heterojunction

A heterojunction, carbon nitride technology, applied in chemical instruments and methods, nitrogen compounds, nitrogen and non-metallic compounds, etc., can solve the problem of low driving force of oxidation/reduction reaction, full water splitting performance needs to be improved, carrier Problems such as slow transmission, to avoid environmental pollution problems, cheap raw materials, and simple methods

Active Publication Date: 2020-06-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These Z-type systems have achieved a certain full water splitting ability, but due to the slow carrier transport and low oxidation / reduction reaction driving force, the full water splitting performance still needs to be improved.
In addition, most of these Z-type systems contain transition metals, the preparation cost is often high, and it is easy to cause heavy metal pollution

Method used

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  • Preparation method and application of carbon nitride ultrathin heterojunction
  • Preparation method and application of carbon nitride ultrathin heterojunction
  • Preparation method and application of carbon nitride ultrathin heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1), such as figure 2 As shown in a, 0.5 g of negatively charged ultrathin hydrogen-producing g-C 3 N 4 (CN-0) was added to 200 mL of aqueous hydrochloric acid solution with a concentration of 1.5 mol / L, followed by ultrasonication for 1 h, stirring vigorously at a speed of 700 r / min for 4 h, then filtering and washing until the supernatant was neutral, and finally vacuum drying to remove water;

[0038] 2), 0.05g negatively charged ultra-thin oxygen-producing g-C 3 N 4 (CN-400) and 0.05g of the positively charged ultrathin hydrogen-producing g-C obtained in step 1) 3 N 4 (CN-0) was added to 200mL deionized water, followed by ultrasonication for 0.5h and vigorous stirring at a speed of 700r / min for 4h. Finally, the water was removed by rotary evaporation to obtain the target product carbon nitride ultrathin heterojunction. The photolytic water splitting performance such as figure 2 as shown in b.

Embodiment 2

[0040] 1), such as image 3 As shown in a, 0.4 g of negatively charged ultrathin hydrogen-producing g-C 3 N 4 (CN-325) was added to 200mL of 1.5mol / L aqueous hydrochloric acid solution, ultrasonically ultrasonicated for 1h, stirred vigorously at a speed of 800r / min for 3h, then filtered and washed until the supernatant was neutral, and finally vacuum-dried to remove water;

[0041] 2), 0.1g negatively charged ultra-thin oxygen-producing g-C 3 N 4 (CN-400) and 0.1 g of the positively charged ultrathin hydrogen-producing g-C obtained in step 1) 3 N 4 (CN-325) was added to 200mL deionized water, followed by ultrasonication for 0.5h and vigorous stirring at a speed of 800r / min for 3h. Finally, the water was removed by rotary evaporation to obtain the target product carbon nitride ultra-thin heterojunction. This heterojunction The photolytic water splitting performance such as image 3 as shown in b.

Embodiment 3

[0043] 1), such as Figure 4 As shown in a, 0.6 g of negatively charged ultrathin hydrogen-producing g-C 3 N 4 (CN-375) was added to 250 mL of aqueous hydrochloric acid solution with a concentration of 1.5 mol / L, ultrasonically for 1 h, and vigorously stirred at a speed of 800 r / min for 4 h, then filtered and washed until the supernatant was neutral, and finally vacuum-dried to remove water;

[0044] 2), 0.1g negatively charged ultra-thin oxygen-producing g-C 3 N 4 (CN-450) and 0.1 g of the positively charged ultrathin hydrogen-producing g-C obtained in step 1) 3 N 4 (CN-375) was added to 250mL of deionized water, followed by ultrasonication for 0.5h and vigorous stirring at a speed of 800r / min for 4h. Finally, the water was removed by rotary evaporation to obtain the target product carbon nitride ultrathin heterojunction. This heterojunction The photolytic water splitting performance such as Figure 4 as shown in b.

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Abstract

The invention discloses a preparation method and application of a carbon nitride ultrathin heterojunction. The method comprises the following steps: carrying out ultrasonic treatment and stirring on negatively-charged ultrathin hydrogen production g-C3N4 in a hydrochloric acid aqueous solution to enhance the dispersity of g-C3N4, wherein the g-C3N4 molecules contain rich -C-N-structures, so that the g-C3N4 molecules can be easily protonated by hydrochloric acid so as to be positively charged; and then carrying out ultrasonic treatment and stirring on the obtained positively-charged ultrathin hydrogen production g-C3N4 and negatively-charged ultrathin oxygen production g-C3N4 in a water phase environment, wherein the positively-charged ultrathin hydrogen production g-C3N4 and the negatively-charged ultrathin oxygen production g-C3N4 can be effectively assembled by utilizing the principle that positive charges and negative charges attract each other, so that the effective combination ofthe hydrogen production semiconductor and the oxygen production semiconductor is achieved so as to successfully construct the ultrathin g-C3N4 heterojunction for photolysis of water. According to theinvention, the obtained ultrathin g-C3N4 heterojunction is excellent in water photolysis performance and good in dispersity and can be stably stored; and the method is simple, high in controllability,good in repeatability, cheap in raw materials, wide in source, safe and environmentally friendly, the production efficiency is improved, the production cost is reduced, and the method is suitable forlarge-scale production.

Description

technical field [0001] The invention belongs to the field of graphite phase carbon nitride materials, and in particular relates to a preparation method and application of carbon nitride ultrathin heterojunction. Background technique [0002] Inspired by natural photosynthesis, semiconductor-based Z-type heterojunction systems are considered to be one of the most effective systems for photocatalytic total water splitting. This system is composed of two semiconductors with matching energy band structures. The semiconductor with lower conduction band potential is used for photocatalytic hydrogen production, and the semiconductor with higher valence band potential is used for photocatalytic oxygen production. Carriers pass through the junction of the two. The interfacial directional transport realizes an orderly oxidation / reduction reaction cycle as a whole. This Z-type system divides the water splitting process into two steps, which overcomes the kinetic and thermodynamic bott...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/082B01J27/24C01B3/04
CPCB01J27/24B01J35/004C01B3/042C01B21/0605Y02E60/36
Inventor 沈少华赵大明
Owner XI AN JIAOTONG UNIV
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