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Composition for hard mask

A composition and hard mask technology, applied in the direction of photosensitive materials for opto-mechanical devices, etc., can solve the problem of inability to ensure the etching resistance of photoresist layers or photoresist patterns, photoresist Layer or photoresist pattern consumption or increase in etching volume, etc., to achieve excellent flatness, high resolution, high photolithography process effect

Active Publication Date: 2018-10-09
DONGWOO FINE CHEM CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, the etching of the above-mentioned ARC layer will be added, so the consumption or etching amount of the above-mentioned photoresist layer or photoresist pattern may increase.
In addition, when the thickness of the above-mentioned etching target film increases or the amount of etching required for forming a desired pattern increases, it may not be possible to ensure sufficient etching resistance of the required above-mentioned photoresist layer or photoresist pattern. sex

Method used

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  • Composition for hard mask
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Examples

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experiment example

[0181] The etching resistance, solubility, and planarity of the hard mask layer or hard mask formed from the composition in Table 1 were evaluated by the evaluation method described later. The evaluation results are shown in Table 2 below.

[0182] (1) Etching resistance evaluation

[0183] Using the spin coating method, the compositions of Examples and Comparative Examples were coated on silicon wafers, and baked at 200°C for 60 seconds to form a thickness of membrane. Coat the photoresist for ArF on each formed film, after 60 seconds of baking at 110 ℃, use the exposure equipment of ASML (XT: 1450G, NA 0.93) company to expose respectively, and then use TMAH (2.38wt % aqueous solution) were developed separately to obtain a 60nm line and space pattern.

[0184] The obtained patterned coupons were further cured at 110 °C for 60 s using CHF 3 / CF 4 The mixed gas dry-etched the test piece for 20 seconds, observed the cross-section with FE-SEM, measured the etching rate, and...

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Abstract

The present invention provides a composition for a hard mask comprising a polymer of a quinone-based linking compound and a hydroxyl group-containing aromatic compound, and a solvent. A hard mask having improved etching resistance, solubility, and flatness can be formed from the composition for a hard mask.

Description

technical field [0001] The present invention relates to a composition for a hard mask. More specifically, the present invention relates to a composition for hard masks containing an aromatic condensate or compound. Background technique [0002] For example, in the fields of semiconductor manufacturing, microelectronics, and the like, the degree of integration of structures such as circuits, wiring, and insulating patterns continues to increase. Therefore, a photolithography process for fine patterning of the above-mentioned structures has also been developed together. [0003] Generally, a photoresist is applied on a film to be etched to form a photoresist layer, and a photoresist pattern is formed through exposure and development steps. Next, by using the above-mentioned photoresist pattern as an etching mask, the above-mentioned film to be etched is partially removed to form a predetermined pattern. The photoresist pattern may be removed by ashing and / or stripping after...

Claims

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Application Information

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IPC IPC(8): G03F7/11
CPCG03F7/11
Inventor 梁敦植梁振锡朴根永崔汉永崔相俊
Owner DONGWOO FINE CHEM CO LTD