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Semiconductor device, manufacturing method thereof and electronic device

A manufacturing method and technology of electronic devices, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as increased gate leakage, improve performance and yield, and reduce gate leakage.

Inactive Publication Date: 2018-10-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the annealing process, the high-k dielectric layer (for example, HfO 2 ) will gradually crystallize from the top surface to the bottom. If the crystal size is too large, there will be a leakage path along the grain boundary. For example, when the crystal size increases to greater than 5nm, the gate leakage significantly increased

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

Examples

Experimental program
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Embodiment 1

[0045] In order to solve the aforementioned technical problems and improve the performance of the device, an embodiment of the present invention provides a method for manufacturing a semiconductor device, such as figure 2 Said, said method mainly comprises:

[0046]Step S1, providing a semiconductor substrate, and forming a high-k dielectric layer on the semiconductor substrate;

[0047] Step S2, doping transition metal elements in the high-k dielectric layer;

[0048] Step S3, performing a first annealing treatment.

[0049] According to the manufacturing method of the present invention, transition metal elements (such as Mo and / or Ta) are doped in the high-k dielectric layer, and the transition metal elements inhibit the crystallization of the high-k dielectric layer during the first annealing , form a cubic phase (cubic phase) and a smaller grain size in the high-k dielectric layer, therefore, the method of the present invention can reduce gate leakage and improve device...

Embodiment 2

[0151] The present invention also provides a semiconductor device, which is prepared by the manufacturing method in the first embodiment above.

[0152] Refer below Figure 1D The structure of the semiconductor device of the present invention will be described in detail. Wherein, in this embodiment, a FinFET device is mainly taken as an example.

[0153] Specifically, the semiconductor device of the present invention includes a semiconductor substrate 100 .

[0154] Specifically, such as Figure 1A As shown, the semiconductor substrate 100 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI ), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0155] Exemplarily, the semiconductor substrate includes at least one of an NMOS device region and a PMOS device region.

[0156] In one example, the semiconductor substrate includes an NMOS dev...

Embodiment 3

[0185] The present invention also provides an electronic device, including the semiconductor device described in Embodiment 2, and the semiconductor device is prepared according to the method described in Embodiment 1.

[0186] The electronic device of this embodiment can be any electronic device such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a TV set, a VCD, a DVD, a navigator, a digital photo frame, a camera, a video camera, a recording pen, MP3, MP4, PSP, etc. Product or equipment, but also any intermediate product including electrical circuits. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

[0187] in, image 3 An example of a mobile phone handset is shown. The mobile phone handset 300 is provided with a display portion 302 included in a housing 301, operation buttons 303, an external connection port 304, a speaker 30...

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The method comprises a step of providing a semiconductor substrate and forming a high-kdielectric layer on the semiconductor substrate, a step of doping the high-k dielectric layer with a transition metal element, and a step of carrying out first annealing processing. According to the manufacturing method of the present invention, the high-k dielectric layer is doped with the transition metal element, the crystallization of the high-k dielectric layer is inhibited during a first annealing process, a cubic phase and a smaller grain size are formed in the high-k dielectric layer, thus the gate leakage can be reduced by the method of the present invention, and the device performance and yield are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. Currently, as the semiconductor industry has advanced to nanotechnology process nodes in pursuit of high device density, high performance, and low cost, the fabrication of semiconductor devices is limited by various physical limits. [0003] Due to the continuous shrinking of technology nodes, the application of high-k dielectric layer can increase the physical thickness of the gate dielectric film while keeping the gate capacitance unchanged, so as to reduce the leakage current of the gate dielectric layer and improve the reliability of the...

Claims

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Application Information

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IPC IPC(8): H01L21/324H01L21/8238H01L27/04
CPCH01L21/324H01L21/8238H01L21/823807H01L27/04
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP