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Photo-thermal induced voltage material and application thereof

A technology of inducing voltage and photothermal, applied in photothermal induced voltage materials and their application fields, it can solve the problems of dark current interference, energy consumption, slow response time, etc., and achieve simple workflow, fast response speed and simple device. Effect

Inactive Publication Date: 2018-10-09
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This type of device can work in a wide spectral range but takes a long time to reach thermal equilibrium, so the response time is slow
Moreover, most of the above two types of devices need to apply bias voltage or bias current, which will cause interference such as dark current and thermal noise, the structure is relatively complicated, and energy is consumed at the same time.

Method used

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  • Photo-thermal induced voltage material and application thereof
  • Photo-thermal induced voltage material and application thereof
  • Photo-thermal induced voltage material and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0021] exist figure 1 YBa 2 Cu 3 o 7-δ Film, δ = 0.02. The preparation process is: SrTiO with an inclination angle of 10° 3 Growth of YBa with a thickness of 200nm on a single crystal substrate 2 Cu 3 o 7-δ Film; photo-induced voltage image obtained under the irradiation of ultraviolet laser with a pulse width of 28ns and a wavelength of 248nm. The peak value of the voltage signal reaches 20V, and the rising edge is 12ns, such as figure 2 shown.

Embodiment 2

[0023] exist figure 1 YBa 2 Cu 3 o 7-δ Thin films, δ = 0.1. The preparation process is: LaAlO with an inclination angle of 5° 3 Growth of YBa with a thickness of 100m on a single crystal substrate 2 Cu 3 o 7-δ Thin film; the photoinduced voltage image obtained under the irradiation of ultraviolet laser with a pulse width of 28ns and a wavelength of 248nm; the peak value of the voltage signal reaches 11.5V, and the rising edge is 29ns, such as image 3 shown.

Embodiment 3

[0025] exist figure 1 YBa 2 Cu 3 o 7-δ Film, δ = 0.28. The preparation process is: LaAlO with an inclination angle of 15° 3 Growth of YBa with a thickness of 300nm on a single crystal substrate 2 Cu 3 o 7-δ Thin film; the photoinduced voltage image obtained under the irradiation of ultraviolet laser with a pulse width of 28ns and a wavelength of 248nm; the peak value of the voltage signal reaches 15.4V, and the rising edge is 30ns, such as Figure 4 shown.

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Abstract

The invention discloses a photo-thermal induced voltage material and an application thereof, and belongs to the technical field of photo and thermal induced voltage materials and devices. In the invention, a thin-film material of YBa2Cu3O7-delta (0<delta<=0.4) is used as the photo-thermal induced voltage material, a YBa2Cu3O7-delta thin film with the thickness ranging from 50nm to 300nm is grown on a SrTiO3 or LaAlO3 monocrystalline substrate with an inclination angle ranging from 5 degrees to 20 degrees through adoption of a pulsed laser deposition technology. The YBa2Cu3O7-delta thin film has the advantages of high signal response ratio, short response time, capacity for operating at a wide spectrum (0.19[mu]m-11[mu]m) without power driving and refrigeration, simple detection elements, simple and convenient operation, wide measurement dynamic range, and capacity for saving energy. The photo-thermal induced voltage material can be used for manufacturing sensitive photo-thermal inducedvoltage detection elements, and can improve the reaction speed of photo and thermal measuring instruments at the same time, thus the photo-thermal induced voltage material can be used for sensitive detection and tracing of pulse or continuous photo-thermal signals or military targets in the technical fields of military and industry, even in the field of life.

Description

technical field [0001] The invention relates to a photothermally induced voltage material and its application, and belongs to the technical field of photothermally induced voltage materials and devices. Background technique [0002] At present, photonic and thermal measuring instruments are mainly divided into two categories: photon-type measuring instruments and calorimetric measuring instruments. Photon-type measuring instruments are based on the excitation of carriers by incident light in semiconductor materials, such as the generation of electron holes. Measures the energy of incident light. Such detectors usually have fast time response, but limited by energy bands and energy levels, they cannot work in a wide spectral range. The calorimetric measuring instrument will change the physical quantity when absorbing heat, and measure the light radiation by monitoring the physical quantity parameters. Such devices can work in a wide spectral range but take a long time to re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/22H01L35/28H10N10/855H10N10/10
CPCH10N10/10H10N10/855
Inventor 虞澜沈艳宋世金胡建力黄杰
Owner KUNMING UNIV OF SCI & TECH