Method capable of improving coating film uniformity and graphite carrier

Abstract

The invention discloses a method capable of improving coating film uniformity and a graphite carrier. A plurality of graphite boats capable of loading solar crystalline silicon battery pieces are arranged in a deposition furnace, wherein the graphite boats are arranged side by side transversely; each graphite boat is supported and fixed through a supporting frame; the adjacent supporting frames are separated and supported through a ceramic supporting sleeve, and the distances between the supporting frames are uneven; the distance between the solar crystalline silicon battery pieces in the graphite boat on the supporting frame on the outer side is longer than the distance between the solar crystalline silicon battery pieces in the graphite boat on the supporting frame on the inner side; andthe distances between the solar crystalline silicon battery pieces in the graphite boats on the supporting frames are gradually shortened from the outer side to the inner side, so that the electric field intensity can be improved, different film layer deposition speeds caused by different temperatures can be compensated, effective control on the deposition speed of the film layers is realized, and the thickness uniformity of the film layers is more excellent.

Description

technical field [0001] The invention relates to a method capable of improving coating uniformity and a graphite carrier. Background technique [0002] Solar crystalline silicon cells need to generate anti-reflection passivation silicon nitride film on the surface of the cell through related processes to ensure the working efficiency of solar crystalline silicon cells. Solar crystalline silicon cells are generally coated by tubular plasma enhanced chemical vapor deposition to improve The surface of the cell is passivated to reduce the reflection of sunlight on the surface of the silicon wafer, thereby improving the photoelectric conversion efficiency; the appearance and color of the film layer are mainly reflected in the thickness of the film layer, and the deposition thickness of the film layer per unit time is a key control factor. The deposition rate of tubular plasma-enhanced chemical vapor deposition is affected by many factors, such as the total amount and ratio of sila...

AI Technical Summary

Problems solved by technology

[0002] Solar crystalline silicon cells need to generate anti-reflection passivation silicon nitride film on the surface of the cell through related processes to ensure the working efficiency of solar crystalline silicon cells. Solar crystalline silicon cells are generally coated by tubular plasma enhanced chemical vapor deposition to improve The surface of the cell is passivated to reduce the reflection of sunlight on the surface of the silicon wafer, thereby improving the photoelectric conversion efficiency; the appearance and color of the film layer are mainly reflected in the thickness of the film layer, and the deposition thickness of the film layer per unit time is a key control factor. The deposition rate of tubular plasma-enhanced chemical vapor deposition is affected by many factors, such as the total amount and ratio of silane and ammonia gas, thermal field, electric field strength, and the distance between slides, etc., and it takes a long time to wait for the temperature balance of the entire area. It can meet the process requirements, but the production capacity requirements require the shortest possible temperature stabilization time; therefore, how to balance the contradiction between the thermal field and the production capacity versus time becomes the core technical contradiction; the tubular plasma-enhanced chemical vapor deposition method used in the prior art Graphite carrier sheets are distributed equidistantly. This carrier ensures that the strength of the cells between the silicon chips is highly consistent, but it does not take into account the phenomenon that the temperature rise rate of the silicon chips outside the carrier is fast and the internal temperature rise rate is slow due to the heating principle. The film deposition rate will change significantly due to the difference in internal and external temperatures, resulting in a thicker film thickness of the silicon wafers on the outer carrier, a large film thickness span between the silicon wafers in the entire carrier, and a wide color distribution; and with the popularization and application of photovoltaic power generation , especially home distributed power plants have higher and higher decorative requirements for the appearance of solar cell modules, so it is particularly important to improve the consistency of the color appearance of the coating; to achieve concentrated film thickness for equal-pitch carriers, longer temperature stability is required Time also affects the finished product output per unit time

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