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Method for improving catalyst activity and selectivity based on atomic layer deposition directional regulation

A technique of atomic layer deposition and catalyst, applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc., can solve problems such as poor controllability, cumbersome operation, and inability to achieve non-continuous specific packaging, etc., to achieve Effect of improving activity and selectivity and enlarging interface area

Inactive Publication Date: 2018-10-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, further studies have shown that the above-mentioned existing technologies are often unable to effectively improve the two indicators of catalyst activity and selectivity at the same time. At the same time, there are cumbersome operations, poor controllability, and difficulty in adapting to the specificity of the target product required for catalytic directional synthesis. Technical issues such as requirements
Although some active metals and auxiliary agents have also been proposed in the prior art to prepare catalysts (such as Rh-Mn / SiO used in the synthesis of C2+ oxygenates 2 Catalyst), wherein the dispersion and chemical properties of the active metal can be further improved by adding promoters and supports, and the yield of the target product can be improved, but in practice it is found that there are still insufficient active sites at the active metal-promoter interface , and the inability to achieve non-continuous specific packages, etc.

Method used

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  • Method for improving catalyst activity and selectivity based on atomic layer deposition directional regulation
  • Method for improving catalyst activity and selectivity based on atomic layer deposition directional regulation
  • Method for improving catalyst activity and selectivity based on atomic layer deposition directional regulation

Examples

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Embodiment 1

[0031] Take 0.2g SiO 2 , baked in a muffle furnace at 600°C for 2h, put it into an atomic layer deposition device, and deposited 10 cycles of Rh nanoparticles on its surface, using rhodium acetylacetonate and oxygen as precursors. The reaction temperature of atomic layer deposition is 200°C, the carrier gas is nitrogen, the precursor pulse time is 30s, and the nitrogen purge time is 60s. Finally, highly dispersed RhO was obtained on the surface of the carrier x nanoparticles.

[0032] Prepared RhO x / SiO 2 Catalyst in 10% H 2 / N 2 Under the atmosphere, it was reduced in a muffle furnace at 400°C for 2 hours to obtain Rh / SiO 2 Catalyst; put into atomic layer deposition equipment, deposit 2 / 4 / 6 cycles of oxide promoter on its surface, using tris(2,2,6,6-tetramethyl-3,5-heptanedionic acid ) manganese and ozone as precursors. The reaction temperature of atomic layer deposition is 150°C, the carrier gas is nitrogen, the precursor pulse time is 60s, and the nitrogen purge ti...

Embodiment 2

[0035] Dissolve rhodium nitrate in deionized water, add rhodium nitrate solution to silicon oxide by equal volume impregnation method, dry at room temperature for 12 hours, dry at 120°C for 12 hours, roast at 350°C in air for 4 hours, and finally in 10% hydrogen atmosphere at 400°C Reducing for 2h, Rh / SiO can be obtained 2 catalyst.

[0036] The prepared Rh / SiO 2 The catalyst is placed in an atomic layer deposition device, and 2 / 4 / 6 cycles of oxide promoters are deposited on its surface, using tris(2,2,6,6-tetramethyl-3,5-heptanedionic acid) Manganese and ozone are precursors. The reaction temperature of atomic layer deposition is 150°C, the carrier gas is nitrogen, the precursor pulse time is 60s, and the nitrogen purge time is 60s. Finally, manganese oxide nanolayers are selectively grown on the surface of active metal Rh nanoparticles to obtain Rh-Mn / SiO 2 catalyst.

Embodiment 3

[0038] Take 0.2g Al 2 o 3 , baked in a muffle furnace at 650 ° C for 5 h, put it into an atomic layer deposition device, and deposited two cycles of Pt nanoparticles on its surface, using trimethyl (methylcyclopentadienyl) platinum (IV) and ozone for the precursor. The reaction temperature of atomic layer deposition is 150°C, the carrier gas is nitrogen, the precursor pulse time is 60s, and the nitrogen purge time is 60s. Finally, highly dispersed Pt nanoparticles were obtained on the surface of the carrier.

[0039] Prepared Pt / Al 2 o 3 The catalyst is placed in atomic layer deposition equipment, and 2 / 5 / 8 cycles of oxide additives are deposited on its surface, using bis(acetylacetonate)cobalt as the cobalt source, and another precursor is ozone. The reaction temperature of atomic layer deposition is 150°C, the carrier gas is nitrogen, the precursor pulse time is 60s, and the nitrogen purge time is 60s. Finally, cobalt oxide nanolayers are selectively grown on the surfa...

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Abstract

Belonging to the technical field related to preparation of metal oxide catalysts, the invention discloses a method for improving the catalyst activity and selectivity based on atomic layer depositiondirectional regulation. The method includes: growing and distributing noble metal nanoparticles uniformly on the surface of a reaction carrier to obtain a noble metal loaded catalyst sample; and depositing a metal oxide assistant on the surface of the noble metal loaded catalyst sample by atomic layer deposition reaction method to obtain a needed catalyst product, and making targeted design to thespecific process parameters of the atomic layer deposition reaction at the same time. The method provided by the invention can enable the oxide assistant to carry out selective deposition on a plurality of crystal planes of the active metal surface, realizes incontinuous coating at special position, at the same time effectively improves the activity and selectivity of the catalyst, and consequently is especially suitable for the application occasion of preparing a catalyst for preparation of a C<2+> oxygenated compound from synthesis gas.

Description

technical field [0001] The invention belongs to the technical field related to the preparation of metal oxide catalysts, and more specifically relates to a method for improving catalyst activity and selectivity based on atomic layer deposition directional control. Background technique [0002] With global warming, the depletion of fossil fuels and the rise in crude oil prices, people are paying more and more attention to the development of clean energy that can replace fossil fuels. Among them, the preparation of clean fuels by gas-phase catalytic reactions is currently the most important industrial production direction, such as synthetic gas ( CO+H 2 ) can directly catalyze the synthesis of C2+ oxygenates, not only as a clean fuel, but also as gasoline additives, etc., and thus has received widespread attention. [0003] For this type of gas-phase catalytic directional synthesis of clean fuels, the main challenge is to develop a related catalyst with excellent catalytic ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/656B01J23/89B01J35/00B01J37/02B01J37/08B01J37/18C07C29/157C07C29/158C07C31/08
CPCC07C29/157C07C29/158B01J23/6562B01J23/8913B01J37/0221B01J37/024B01J37/08B01J37/18B01J35/394B01J35/393C07C31/08
Inventor 陈蓉曹坤龚渺单斌蔡佳明
Owner HUAZHONG UNIV OF SCI & TECH
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